• 대한전기학회:학술대회논문집
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• 대한전기학회 2009년도 제40회 하계학술대회
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• pp.1225_1226
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• 2009

유리 기판 상에 이중 게이트 절연막을 가지는 우수한 특성의 P형 엑시머 레이저 어닐링 (ELA) 다결정 실리콘 박막 트랜지스터를 제작하였다. 그리고 P형 짧은 채널 ELA 다결정 실리콘 박막 트랜지스터의 오프 상태 스트레스 하에서의 전기적 특성을 분석하였다. 스트레스하에서 긴 채널에서의 문턱 전압은 양의 방향으로 거의 이동하지 않는 (${\Delta}V_{TH}$ = 0.116V) 반면, 짧은 채널 박막 트랜지스터의 문턱 전압은 양의 방향으로 상당히 이동 (${\Delta}V_{TH}$ = 2.718V)하는 것을 확인할 수 있었다. 이런 짧은 채널 박막 트랜지스터에서 문턱 전압의 양의 이동은 다결정 실리콘 막과 게이트 산화막 사이의 계면에서의 전자 트랩핑 때문이다. 또한, 박막 트랜지스터의 누설 전류는 오프 상태 스트레스 하에서의 채널 영역의 홀 전하로 인하여 온 전류 수준을 감소시키지 않고 억제될 수 있었다. C-V 측정 결과는 계면의 전자 트랩핑이 드레인 접합 영역부근에서 발생한다는 것을 나타낸다.

• 한국소음진동공학회논문집
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• 제16권12호
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• pp.1272-1278
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• 2006

This paper presents a novel MEMS condenser microphone with rigid backplate to enhance acoustic characteristics. The MEMS condenser microphone consists of membrane and backplate chips which are bonded together by gold-tin(Au/Sn) eutectic solder bonding. The membrane chip has $2.5mm{\times}2.5mm$, 0.5${\mu}m$ thick low stress silicon nitride membrane, $2mm{\times}2mm$ Au/Ni/Cr membrane electrode, and 3${\mu}m$ thick Au/Sn layer. The backplate chip has $2mm{\times}2mm$, 150${\mu}m$ thick single crystal silicon rigid backplate, $1.8mm{\times}1.8mm$ backplate electrode, and air gap, which is fabricated by bulk micromachining and silicon deep reactive ion etching. Slots and $50{\sim}60{\mu}m$ radius circular acoustic holes to reduce air damping are also formed in the backplate chip. The fabricated microphone sensitivity is 39.8 ${\mu}V/Pa$(-88 dB re. 1 V/Pa) at 1 kHz and 28 V polarization voltage. The microphone shows flat frequency response within 1 dB between 20 Hz and 5 kHz.

• 전기학회논문지
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• 제63권8호
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• pp.1055-1063
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• 2014

Power losses of a 1-stage DC-DC converter and 2-stage DC-DC converter are compared in this paper. A phase-shift full-bridge DC-DC converter is considered as 1-stage topology. This topology has disadvantages in the stress of rectifier diodes because of the resonance between the leakage inductor of the transformer and the junction capacitor of the rectifier diode. 2-stage topology is composed of an LLC resonant full-bridge DC-DC converter and buck converter. The LLC resonant full-bridge DC-DC converter does not need an RC snubber circuit of the rectifier diode. However, there is the drawback that the switching loss of the buck converter is large due to the hard switching operation. To reduce the switching loss of the buck converter, SiC MOSFET is used. This paper analyzes and compares power losses of two topologies considering temperature condition. The validity of the power loss analysis and calculation is verified by a PSIM simulation model.

• Journal of Electrical Engineering and Technology
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• 제12권5호
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• pp.1805-1811
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• 2017

Recently, DC systems are considered as efficient electric power systems for renewable energy based clean power generators. This discloses several critical issues that are required to be considered before the installation of the DC systems. First of all, voltage/current switching stress, which is aggravated by large fault current, might damage DC circuit breakers. This problem can be simply solved by applying a superconducting fault current limiter (SFCL) as proposed in this study. It allows a simple use of insulated-gate bipolar transistors (IGBTs) as a DC circuit breaker. To evaluate the proposed resistive type SFCL application to the DC circuit breaker, a DC distribution system is composed of the practical line impedances from the real distribution system in Do-gok area, Korea. Also, to reflect the distributed generation (DG) effects, several DC-to-DC converters are applied. The locations and sizes of the DGs are optimally selected according to the results of previous studies on DG optimization. The performance of the resistive type SFCL applied DC circuit breaker is verified by a time-domain simulation based case study using the power systems computer aided design/electromagnetic transients including DC (PSCAD/ EMTDC(R)).

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 하계학술대회 논문집 B
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• pp.1319-1321
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• 2001

The purpose of this study is to manufacture and test a thermoelectric generator which converts unused energy from close-at-hand sources, such as garbage incineration heat and industrial exhaust, to electricity. A manufacturing process and the properties of a thermoelectric generator are discussed before simulation the thermal stress and thermal properties of a thermoelectric module located between an aluminum tube and alumina plate. We can design the thermoelectric modules having the good properties of thermoelectric generation. Resistivity of thermoelectric module for thermoelectric generation consisting of 62 cells was $0.15{\sim}0.4{\Omega}$. The maximum power of thermoelectric generator using thermoelectric generation modules can be defined as temperature function, and in this case. It can be analogized the lineal relation between current and voltage characteristics as function of temperature. The thermoelectric generator using 32 thermoelectric modules was assembled with 32 directly connected modules that they constrained for two kinds of heat transfer tube with key joints.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.203-204
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• 2006

Nano-Varistors fabricated with ZnO 30nm and 80nm powders were studied about the electrical characteristics with AC accelerated degradation in this paper Especially, ZnO nano-powder varistors were sintered m air at $1050^{\circ}C$ and analyzed the phenomenons of before and after AC degradation test. The stress conditions of AC degradation test were $1.0V_{1mA}$ $115{\pm}2^{\circ}C$ for 24h. 80nm-varistor was exhibited better performance than 30nm-varistor m the electrical stabilities. And then 80nm-varistor resulted m the degradation characteristics that the variation rate of operating voltage, nonlinear coefficient and leakage current was -0 3%, -0 4% and -3 3%, respectively.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.944-947
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• 2005

Highly stable gate driver circuit using a-Si TFT has been developed. The circuit has dual-pull down structure, in which bias stress to the TFTs is relieved by alternating applied voltage. The circuit has been successfully integrated in 4-in. QVGA and 14-in. XGA TFT-LCD with a normal a-Si process, which are stable for over 2,000 hours at $60^{\circ}C$. The enhancement of stability of the circuit is attributed to retarded degradation of pull-down TFTs by AC driving.

• 대한전기학회논문지:전기기기및에너지변환시스템부문B
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• 제50권4호
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• pp.179-187
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• 2001

In recent years, the switching source devices have the advantage of small, light and high reliability with the high-frequency. But, high-frequency switching has disclosed disadvantage of result from stress and turn-on and turn-off peak losses at the switching instant. Accordingly, in this paper propose ZVS-HB type high-frequency resonant DC/DC converter using soft switching technique (Zero-Voltage-Switching, Zero-Current-Switching) with safety operating of circuit at diving on inductive zone, through the circuit design example using the capacitor $C_3,\;C_4$ with soft switching function and division characteristic of resonant Capacitor C, $C_1,\;C_2$, and, the characteristic analysis of circuit is generally described using normalized parameters. Also, this paper certified a rightfulness of characteristic analysis in comparison with a theoretical values and a experimental values obtain from experiment using MOSFET.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 F
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• pp.2668-2670
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• 1999

In the past, the PWM converter had a large switching loss by hard switching and difficult to high frequency operation. The resonance converter to decrease the switching loss and EMI is required the frequency control and needed to reduce the voltage or current stress at each parts. So, this paper propose the 3-phase boost converter and the method to compensated input power factor by control the amplitude - an instantaneous value of the DC inductor current -and control the switching frequency that a modulation error by the ripple of the DC inductor current. The proposed 3-phase PWM boost converter of single phase control type can takes higher capacity and compensate the power factor by using Feed back controller at each phase for the existing 3-phase bridge rectifier type. Moreover the 3-phase full bridge type using the rectifier at each 3-phase circuit will be small size reactor and compensate input power factor by minimize harmonic components of each phase.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 1996년도 춘계학술대회 논문집
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• pp.146-150
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• 1996

A thermal micro actualtor has been fabricated using surface micromachining techniques. It consists of doped ploysilicon as a moving part and TEOS(Tetra Ethyl Ortho Silicate) as a sacrificial layer. The polysilicon was annealed for the reduction of residual stress which is the main cause to its deformation such as bending and buckling. And the newly developed HF VPE(vapor phase etching)process was also used as an effective release method for the elimination of sacrificaial layer. With noliquid involved during any of the steps for relasing, unlike other reported relase techniques, the HF VPE pocess has produced polysilicon microstructures with virtually no process-induced stiction problem. The actuation is incured by the thermal expasion due to current flow in active polysilicon cantilever, which motion is amplified bylever mechanism. The thickness of pllysilicon is 2 .mu. m and the length of active and passive polysilicon cantilever are 500 .mu. m, respectively. The moving distance of polysilicon actuator was experimentally conformed as large as 21 .mu. m at the input voltage level of 10 V and 50Hz square wave. These micro actuator technology can be utilized for the fabrication of MEMS (microlectromechanical system) such as microrelay, which requires large displacement or contact force but relatively slow response.