• 제목/요약/키워드: stress voltage

검색결과 1,070건 처리시간 0.03초

직류 및 교류스트레스 조건에서 발생된 Hot-Carrier가 PMOSFET의 누설전류에 미치는 영향 (Hot-Carrier Induced GIDL Characteristics of PMOSFETs under DC and Dynamic Stress)

  • 류동렬;이상돈;박종태;김봉렬
    • 전자공학회논문지A
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    • 제30A권12호
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    • pp.77-87
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    • 1993
  • PMOSFETs were studied on the effect of Hot-Carrier induced drain leakage current (Gate-Induced-Drain-Leakage). The result turned out that change in Vgl(drain voltage where 1pA/$\mu$m of drain leadage current flows) was largest in the Channel-Hot-Hole(CHH) injection condition and next was in dynamic stress and was smallest in electron trapping (Igmax) condition under various stress conditions. It was analyzed that if electron trapping occurrs in the overlap region of gate and drain(G/D), it reduces GIDL current due to increment of flat-band voltage(Vfb) and if CHH is injected, interface states(Nit) were generated and it increases GIDL current due to band-to-defect-tunneling(BTDT). Especially, under dynamic stress it was confirmed that increase in GIDL current will be high when electron injection was small and CHH injection was large. Therefore as applying to real circuit, low drain voltage GIDL(BTDT) was enhaced as large as CHH Region under various operating voltage, and it will affect the reliablity of the circuit.

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고전계 인가 산화막의 애노우드와 캐소우드 트랩 (Anode and Cathode Traps in High Voltage Stressed Silicon Oxides)

  • 강창수;김동진
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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    • pp.461-464
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    • 1999
  • This study has been investigated that traps generated inside of the oxide and at the oxide interfaces by the stress bias voltage. The traps are charged near the cathode with negative charge and charged near the anode with positive charge. The charge state of the traps can easily be changed by application of low voltages after the stress high voltage. These trap generation involve either electron impact ionization processes or high field generation processes. It determined to the relative traps locations inside the oxides ranges from 113.4$\AA$ to 814$\AA$ with capacitor areas of 10$^{-3}$ $\textrm{cm}^2$ . The oxide charge state of traps generated by the stress high voltage contain either a positive or a negative charge.

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전압 스트레스와 맥동이 개선된 양극성 출력 전압을 갖는 LCCT Z-소스 DC-DC 컨버터 (LCCT Z-Source DC-DC Converter with the Bipolar Output Voltages for Improving the Voltage Stress and Ripple)

  • 박종기;신연수;정영국;임영철
    • 전력전자학회논문지
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    • 제18권1호
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    • pp.91-102
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    • 2013
  • This paper proposes the improved LCCT(Inductor-Capacitor-Capacitor-Trans) Z-source DC-DC converter (Improved LCCT ZSDC) which can generate the bipolar output voltages according to duty ratio D. The proposed converter has the characteristic and structure of Quasi Z-source DC-DC converter(Quasi ZSDC) and conventional LCCT Z-source DC-DC converter(LCCT ZSDC). To confirm the validity of the proposed method, PSIM simulation and a DSP based experiment were performed for each converter. In case which the input DC voltage is 70V, the bipolar output DC voltage of positive 90V and negative 50V could generate. Also, as comparison result of the capacitor voltage ripple in Z-network and the input current under the same condition for each converter, the voltage stress and the capacitor voltage in Z-network of the proposed method were lower compared with the conventional methods. Finally, the efficiency for each method was investigated according to load variation and duty ratio D.

ST Quasi Z-소스 인버터의 스트레스 저감과 출력전압 특성 (Characteristics of the Stress Reduction and Output Voltage of ST(Switched Trans) Quasi Z-Source Inverter)

  • 김세진;정영국;임영철
    • 전력전자학회논문지
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    • 제18권1호
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    • pp.1-9
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    • 2013
  • This paper proposes a ST(Switched Trans) quasi Z-source inverter using a Switched Trans Cell combing the characteristics of a Switched Inductor Cell and Trans. A DC link inductor of the conventional quasi Z-source inverter is alternated with Switched Trans Cell of the proposed ST quasi Z-source inverter. Trans Cell of the proposed method consists of one Trans and two diodes, and the proposed method has higher and more various boost function than the conventional quasi Z-source inverter by simply changing the turns ratio of primary and secondary of the Trans. The validity of the proposed ST Z-source inverter was confirmed by PSIM simulation and a DSP based experiment under the input voltage 48V and output phase voltage 30V. As a result, when compared with the traditional quasi Z-source inverter, the proposed method has the advantage of the low voltage stress under the same output voltage condition of the voltage.

넓은 입력 전압 범위와 감소된 스트레스 전압 기능성을 갖는 새로운 승압형 멀티레벨 DC-DC 컨버터 (A New Multi Level High Gain Boost DC-DC Converter with Wide Input Voltage Range and Reduced Stress Voltage Capability)

  • 이바둘라예브 안바르;박성준
    • 전력전자학회논문지
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    • 제25권2호
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    • pp.133-141
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    • 2020
  • The use of high-gain-voltage step-up converters for distributed power generation systems is being popularized because of the need for new energy generation and power conversion technologies. In this study, a new constructed high-gain-boost DC-DC converter was proposed to coordinate low voltage output DC sources, such as PV or fuel cell systems, with high DC bus (380 V) lines. Compared with traditional boost DC-DC converters, the proposed converter can create higher gain and has wider input voltage range and lower voltage stress for power semiconductors and passive elements. Moreover, the proposed topology produces multilevel DC voltage output, which is the main advantage of the proposed topology. Steady-state analysis in continuous conduction mode of the proposed converter is discussed in detail. The practicability of the proposed DC-DC converter is presented by experimental results with a 300 W prototype converter.

High Step-up DC-DC Converter by Switched Inductor and Voltage Multiplier Cell for Automotive Applications

  • Divya Navamani., J;Vijayakumar., K;Jegatheesan., R;Lavanya., A
    • Journal of Electrical Engineering and Technology
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    • 제12권1호
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    • pp.189-197
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    • 2017
  • This paper elaborates two novel proposed topologies (type-I and type-II) of the high step-up DC-DC converter using switched inductor and voltage multiplier cell. The advantages of these proposed topologies are the less voltage stress on semiconductor devices, low device count, high power conversion efficiency, high switch utilization factor and high diode utilization factor. We analyze the Type-II topologies operating principle and mathematical analysis in detail in continuous conduction mode. High-intensity discharge lamp for the automotive application can use the derived topologies. The proposed converters give better performance when compared to the existing types. Also, it is found that the proposed type-II converter has relatively higher voltage gain compared to the type-I converter. A 40 W, 12 V input voltage and 72 V output voltage has developed for the type-II converter and the performances are validated.

멀티레벨 인버터 구동 고압유도전동기에서 발생하는 과도과전압 저감을 위한 RC필터의 효과분석 (Analysis on the effect of RC filter to mitigate transient overvoltage on the high voltage induction motor fed by Multi level inverter)

  • 권영목;김재철;김용성;이양진
    • 한국조명전기설비학회:학술대회논문집
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    • 한국조명전기설비학회 2005년도 학술대회 논문집
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    • pp.399-403
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    • 2005
  • In this paper, we analyze on the effect of RC filter to mitigate transient overvoltage on the high voltage induction motor fed by H-bridge cascaded 7-level inverter. The switching surge voltage becomes the major cause to occur the insulation failure by serious voltage stress in the stator winding of high voltage induction motor. The effect of switching surge appears more serious in high voltage induction motor than low voltage induction motor. Consequently, we demonstrated that the RC filter connected to the motor terminals greatly reduces the transient voltage stress md ringing. The results of simulation show the suppression of transient overvoltage at the motor end of a long cable. using EMTP

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스트레스 인가에 의한 다결정 실리콘 박막 트랜지스터의 열화 특성 (Degradation of Polycrystalline Silicon Thin Film Transistor by Inducing Stress)

  • 백도현;이용재
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2000년도 하계종합학술대회 논문집(2)
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    • pp.322-325
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    • 2000
  • N-channel poly-Si TFT, Processed by Solid Phase Crystalline(SPC) on a glass substrate, has been investigated by measuring its electrical properties before and after electrical stressing. It is observed that the threshold voltage shift due to electrical stress varies with various stress conditions. Threshold voltages measured in 1.5$\mu\textrm{m}$ and 3$\mu\textrm{m}$ poly-Si TFTs are 3.3V, 3.V respectively. With the threshold voltage shia the degradation of transconductance(G$\_$m/) and subthreshold swing(S) is also observed.

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DC 전압이 유입변압기 절연시스템에 미치는 영향에 관한 연구 (Study on the effect of DC voltage in oil-immersed transformer insulation system)

  • 장효재;김용한;석복렬
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2011년도 제42회 하계학술대회
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    • pp.1552-1553
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    • 2011
  • The HVDC transformer which is one of the main equipments for HVDC(High Voltage Direct Current) electric power transmission systems is exposed to not only AC voltage but also the inflowing DC voltage which comes from the DC-AC converter systems. Therefore, the HVDC transformer insulation system is required to withstand the electric field stress under AC, DC and DC polarity reversal conditions. However the electric field distributions under those conditions are different because the AC electric field and DC electric field are governed by permittivity and conductivity, respectively. In this study, the changes of electric potential and electric field of conventional AC transformer insulation system under DC polarity reversal test condition were analyzed by FEM(Finite Element Method). The DC electric field stress was concentrated in the solid insulators while the AC electric field stress was concentrated in the mineral oil. In addition, the electric stress under that condition which is affected by the surface charge accumulation at the interfaces between insulators was evaluated. The stress in some parts could be higher than that of AC and DC condition, during polarity reversal test. The result of this study would be helpful for the HVDC transformer insulation system design.

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보조회로를 이용한 영전압 스위칭 플라이백 컨버터 (ZVS Flyback Converter Using a Auxiliary Circuit)

  • 김태웅;강창수
    • 대한전자공학회논문지TE
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    • 제37권5호
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    • pp.11-116
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    • 2000
  • 본 논문에서는 영전압 스위칭에 의해 스위칭 손실과 전압 스트레스로 줄이는 토폴로지를 제안하였다. 일반적으로 스위칭 모드 변환시에는 과도한 전압과 전류가 기생 성분에 의해서 발생하는데 이것은 전압 스트레스와 전력 손실을 발생시켜 전원 장치의 성능에 영향을 미치어 전체 효율이 감소한다. 실제로 플라이백 컨버터에서 스위치의 천이 첨두 전압과 전류는 기생성분에 의해서 발생한다. 이러한 문제를 보완하기 위하여 보조회로를 이용한 영전압 스위칭 플라이백 컨버터를 제안한다. 기존의 플라이백 토폴로지에 보조 회로를 추가하여 전력 손실을 감소시키고 스위칭 전압 스트레스를 최소로 하였다. 보조 회로 내에 스너버 캐패시터는 주 스위치의 온·오프시 제어 전압 변화시간에 의해 영전압 스위칭을 가능하게 하여 전압 스트레스 및 전력 손실을 감소시킨다. 본 논문에서는 회로의 세부적인 분석을 하고 동작과정을 설명하였고 500W, 100㎑ 대의 보조회로를 사용한 영전압 스위칭 플라이백 컨버터를 설계하여 기존의 하드 스위칭 플라이백 컨버터와의 효율을 비교하였다.

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