• 전력전자학회:학술대회논문집
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• 전력전자학회 2004년도 전력전자학술대회 논문집(2)
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• pp.551-555
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• 2004

The two-transformer full bridge (TTFB) PWM converter has two transformers which act as the output inductor as well as the main transformer, i.e. as the forward and the flyback transformer. Although the doubled leakage inductor of the TTFB makes it easier to achieve the zero-voltage switching (ZVS) of the lagging leg switch along the wide load range, it instigates a serious voltage ringing in the secondary rectifier diodes, which would require the dissipative snubber circuit, cause the serious power dissipation, and increase the voltage stress across those diodes. To overcome these problems, a, new lossless diode-clamp rectifier (LDCR) is employed as the output rectifier, which helps the voltage across rectifier diodes to be clamped on a half the output voltage $(V_o/2)$ or the output voltage $(V_o)$. Therefore, no dissipative snubber for rectifier diodes is needed and a high efficiency as well as low noise output voltage can be realized. The operations, analysis and design consideration of proposed converter are presented in this paper. To verify the validity of the proposed converter, experimental results from a 425W, 385-170Vdc prototype for the plasma display panel (PDP) sustaining power module (PSPM) are presented.

• Journal of Power Electronics
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• 제15권1호
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• pp.86-95
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• 2015

An active clamp high step-up boost converter with a coupled inductor is proposed in this paper. In the proposed strategy, a coupled inductor is adopted to achieve a high voltage gain. The clamp circuit is included to achieve the zero-voltage-switching (ZVS) condition for both the main and clamp switches. A rectifier composed of a capacitor and a diode is added to reduce the voltage stress of the output rectifier diode. As a result, diodes with a low reverse-recovery time and forward voltage-drop can be utilized. Since the voltage stresses of the main and clamp switches are far below the output voltage, low-voltage-rated MOSFETs can be adopted to reduce conduction losses. Moreover, the reverse-recovery losses of the diodes are reduced due to the inherent leakage inductance of the coupled inductor. Therefore, high efficiency can be expected. Firstly, the derivation of the proposed converter is given and the operation analysis is described. Then, a steady-state performance analysis of the proposed converter is analyzed in detail. Finally, a 250 W prototype is built to verify the analysis. The measured maximum efficiency of the prototype is 95%.

• 전기학회논문지
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• 제67권9호
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• pp.1159-1164
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• 2018

Vacuum circuit breakers(VCB) are widely used for current interruption of high-voltage inductive loads such as induction motors. This VCB can be chopped off before the current zero due to its high arc-extinguishing capability. One of the outstanding features of VCB is that it can cut off high frequency re-ignition current more than other circuit breakers. If the transient recovery voltage generated in the arc extinguishing is higher than the dielectric strength of the circuit breaker, a re-ignition phenomenon occurs. The surge voltage of the re-ignition is very high in magnitude and the steepness of the waveform is so severe that it can act as a high electrical stress on the winding. If the high frequency current of one phase affects the other two phases when the re-ignition occurs, it may cause a high surge voltage due to the virtual current chopping. If the magnitude of the voltage allowed in the motor winding is high or the waveform level is too severe, it may lead to insulation breakdown. Therefore, it is necessary to reduce the voltage to within a certain range. In this study, we briefly explain the various phenomena at the time of interruption, analyzed the magnitude of the dielectric strength and the transient recovery voltage at the simultaneous three-phase interruption that can give the greatest influence to the inductive load, proposed a method to reduce the impact.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 추계학술대회 논문집 전력기술부문
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• pp.63-65
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• 2004

The recent advancement in the power electronic technique has increased the use of induction motor fed by inverter using high-frequency switching devices. Also the tendency is toward larger size and higher voltage. Therefore, The IGBT (Insulated-Gate Bipolar Transistor) that is high switching frequency element has been using increase. But, The switching surge voltage was occurred by high switching frequency of inverter has appeared a voltage doubling in the motor input terminal due to mismatching of cable characteristic impedance and motor characteristic impedance. Actually, The Switching surge voltage became the major cause to occur the insulation failure by serious voltage stress in the stator winding of induction motor. The short during rise time of switching surge and cable length is increased, the maximum transient voltage seen at the motor terminals increases. In this paper, Analyzed switching surge transient voltage of power cable pulling is used EMTP(Electromagnetic Transient Program) at the induction motor terminal and in cable.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제54권3호
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• pp.109-113
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• 2005

It has been reported that the failure phenomenon and variation of electrical characteristic due to the effect of electrostatic discharge(ESD) in silicon devices. But we had fess reports about the phenomenon due to the ESD in the compound semiconductors. So there are a lot of difficulty to the phenomenon analysis and to select the protection method of main circuits or the devices. It has not been reported that the relation between the ESD stress and GaN devices, which is remarkable to apply the operation in high temperature and high voltage due to the superior material characteristic. We studied that the characteristic variation of the AlGaN/GaN HEMT current, the leakage current, the transconductance(gm) and the failure phenomenon of device due to the ESD stress. We have applied the ESD stress by transmission line pulse(TLP) method, which is widely used in ESD stress experiments, and observed the variation of the electrical characteristic before and after applying the ESD stress. The on-current trended to increase after applying the ESD stress. The leakage current and transconductance were changed slightly. The failure point of device was mainly located in middle and edge sides of the gate, was considered the increase of temperature due to a leakage current. The GaN devices have poor thermal characteristic due to usage of the sapphire substrate, so it have been shown to easily fail at low voltage compared to the conventional GaAs devices.

• 전자공학회논문지A
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• 제32A권6호
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• pp.67-74
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• 1995

This paper proposes the step-stress type-I censoring model for analyzing the data of accelerated life test and reducing the time of accelerated life test. In order to obtain the data of accelerated life test, the step-stress accelerated life test was run with voltage stress to CMOS Hex Buffer. The Weibull distribution, the Inverse-power-law model and Maximum likelihood method were used. The iterative procedure using modified-quasi-linearization method is applied to solve the nonlinear equation. The proposed Weibull step-stress type-I censoring model exactly estimases the life time of units, while reducting the time of accelerated life test and the equipments of test.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2008년도 추계학술대회A
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• pp.1289-1294
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• 2008

Electrostatic discharge(ESD) phenomenon is a serious reliability concern. It causes approximately most of all field failures of IC. To quality the ESD immunity of IC product, there are some test methods and standards developed. ESD events have been classified into 3 models, which are HBM, MM and CDM. All the test methods are designed to evaluate the ESD immunity of IC products. This study provides an overview among ESD test methods on ICs and an efficient ESD stress method. We have estimated on all pin combination about the positive and negative ESD stress. We make out the weakest stress mode. This mode called a worst-case mode. We proposed that positive supply voltage pin and I/O pin combination is efficient because it is a worst-case mode.

• 전자공학회논문지 IE
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• 제45권4호
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• pp.7-10
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• 2008

본 연구에서는 load-pull 장비를 이용하여 hot carrier 현상에 따른 RF 전력 성능 저하를 측정 분석하였다. 스트레스를 인가한 주에 RF 전력 지수들은 감소하였으며, 고정 전압 조건에서 관찰한 SOIl MOSFET의 DC 성능 지수들 또한 hot carrier stress로 인하여 감소함을 할 수 있었다. 또한 Hot carrier stress로 인한 DC 성능 저하로 인하여 RF 전력 성능 저하의 감소를 알 수 있었다.

• 대한전기학회논문지:전기기기및에너지변환시스템부문B
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• 제52권8호
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• pp.420-426
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• 2003

This paper deals with the effect of exciter parameters on the torsional stress of turbine-generator. The excitation system effects on the AC network stability and the turbine-generator stress. However. it, until now, have not reported that any parameter among exciter parameters is related to the stability and the stress. In order to verify those CIGRE HVDC model was used. Since the AC network with HVDC has the voltage stability problem due to big capacitor, the worst condition to analyze the stress can considered. The EMTDC program is used for the simulation studies.

• 전기학회논문지
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• 제68권1호
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• pp.52-60
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• 2019

In this paper, four types of insulation coils were fabricated by adding various kinds of glycols to improve the flexibility and adhesion of insulating coils in varnish dispersed with PAI / Nano Silica_15wt%. The applied voltage and frequency were 1.5 kV / 20 kHz for accelerated life evaluation. Through the 6th temperature stress level, the cause of the insulation breakdown of the coil was ignored and only the breakdown time was measured. The Arrhenius model was chosen based on the theoretical relationship between chemical reaction rate and temperature for estimating the insulation life of the coil due to accelerated thermal stress. Three types of distributions (Weibull, Lognormal, Exponential) were selected as the relationship between thermal stress model and distribution. The average insulation lifetime was estimated under the temperature stress of four types of insulation coils through the relationship between one kind of model and three kinds of distributions.