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Effect of Hot Carrier Stress on The Power Performance Degradation in SOI MOSFET  

Lee, Byung-Jin (Dept. of Electronic Engineering, Univ. of Incheon)
Park, Sung-Wook (Dept. of Information & Communications, Yuhan College)
Park, Jong-Kwan (Dept. of Information & Communications, Yuhan College)
Publication Information
전자공학회논문지 IE / v.45, no.4, 2008 , pp. 7-10 More about this Journal
Abstract
In this work investigates hot carrier stress on the RF power of SOI MOSFET using load-pull measurement. We found that the RF power characteristics are affected by the hot carrier stress, and the DC performance of SOI MOSFET is clearly degraded after hot carrier stress at constant voltage measurement. And these experimental observations can be explained by the change of DC performance degradation coefficient under hot carrier stress.
Keywords
Hot Carrier; Hot Carrier Stress; SOI MOSFET; RF Power;
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