• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.220-223
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• 2002

Experimental study for radiation stress properties of EPDM cable for nuclear power plant was investigated. Samples of EPDM are fabricated as hot press, then radiation rays irradiated 0~100Mrad and measured radiation properties in the voltage range of 0~10KV. Voltage-current and capacitance characteristics of linear and log curves and the relationship of current due to irradiation of radiaition rays are discussed.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 춘계학술대회 논문집 전기기기 및 에너지변환시스템부문
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• pp.276-280
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• 2003

This paper presents a zero voltage and zero current switching (ZVZCS) interleaving two-transistor forward converter for high input voltage and high power application. A phase shift has a disadvantage that a circulating current and RMS current stress, conduction losses of transformer and switching devices increases. Due to this circulating current and RMS current stress, conduction losses of transformer and switching devices increases. To alleviate these problems, we propose an improved interleaving two-transistor forward Zero Voltage and Zero Current Switching (ZVZCS) dc/dc converter using a tapped inductor a snubber capacitor and two snubber diodes attached at the secondary side of transformer. The proposed ZVZCS converter is verified on a 1.8kW, 5kHz experimental prototype.

• Journal of Power Electronics
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• 제13권1호
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• pp.9-19
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• 2013

In this paper, a ripple input current embedded switched-inductor Z-source inverter (rESL-ZSI) and a continuous input current embedded switched-inductor Z-source inverter (cESL-ZSI) are proposed by inserting two dc sources into the switched-inductor cells. The proposed inverters provide a high boost voltage inversion ability, a lower voltage stress across the active switching devices, a continuous input current and a reduced voltage stress on the capacitors. In addition, they can suppress the startup inrush current, which otherwise might destroy the devices. This paper presents the operating principles, analysis, and simulation results, and compares them to the conventional switched-inductor Z-source inverter. In order to verify the performance of the proposed converters, a laboratory prototype was constructed with 60 $V_{dc}$ input to test both configurations.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2000년도 ITC-CSCC -2
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• pp.559-562
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• 2000

The problem of noise generation due to PWM switched-mode power converter has been widely noticed from the viewpoint of Electromagnetic Interference(EMI). Many kings of topologies for resonant converters have been developed both to overcome this noise problem and to attain high power efficiency. It is reported in references that resonant converters which are derived from PWM converter using resonant switch show much lower noise characteristics than PWM converter, and that current-mode resonant converter is more sensitive to stored charge in rectifying diode than voltage-mode counterpart concerning surge generation at diode’s turn-off. On the other hand, above mentioned resonant converters have defect of high-voltage stress on semiconductor switch and complicated circuit configuration. Hence, the simplified Forward-type resonant converter has been proposed and investigated due to its prominent features of simplicity of circuit configuration, low voltage stress and high stability. However, its noise characteristics still remain unknown. The purpose of this paper is to study quantitatively the noise characteristics of this simplified Forward-type resonant converter by experiment and analysis. The influence of parasitic elements and stored charge in rectifying diode on noise generation has been clarified.

• 전기학회논문지
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• 제60권7호
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• pp.1366-1371
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• 2011

The resonant converter cause the high voltage stress according to the input voltage, which increases the conduction loss in converter power switches. The topology of LLC half bridge resonant converter provides ZVS characteristic and also the stress of voltage and current is smaller than that of the general resonant converters. So we can expect the higher efficiency. In this paper, the analysis of the characteristics of the converter efficiency and the best conditions for highest efficiency were investigated. As a result, the efficiency of utilizing up to 93% is achieved.

• 조명전기설비학회논문지
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• 제21권9호
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• pp.1-6
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• 2007

In this study, tests of brain waves were carried out to investigate the physiological characteristics of drivers during a change of headlight brightness. The participants were 20 males in their 20s. Twenty-three different conditions combining the waveform of light, voltage, and alteration time were used. The measurement of brain waves was performed by an internationally standardized 10-20 method using LXE3232-RF. The results were as follows. 1. From the results of the brain wave map analysis, it was suggested that waveform A increases mental stress and waveform B affects mental and visual stress. The longer the stimulation time, the more stress level was detected. 2. The voltage alteration time of the B waveform should be kept to less than 1500msec, while the voltage should not fall below 11.5[V].

• 한국조명전기설비학회:학술대회논문집
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• 한국조명전기설비학회 2006년도 춘계학술대회 논문집
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• pp.125-130
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• 2006

In this study, tests of brain waves were carried out to investigate the driver's physiological characteristics by the change of the headlight. The participants were 20 men in their 20s and twenty-three different conditions in combinations of waveform of light, voltage, and alteration time were used. The measurement of the brain waves was performed by internationally standardized 10-20 method using LXE3232-RF. The results were analyzed by Power Spectrum Analysis using alpha-, and beta-wave and by the analysis of different brain domains using Brain wave Map. The results were as follows. 1. From the results of the Brain wave Map analysis, it was suggested that A waveform increases mental stress and B waveform affects mental and visual stress. The longer the stimulation time, the more stress level was detected. 2 The voltage alteration time of B waveform should be kept less than 1500msec, and the voltage should not fall below 11.5V.

• 전기학회논문지P
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• 제53권1호
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• pp.14-21
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• 2004

Most adjustable-speed drives (ASDs) designed to operate low voltage induction motors incorporate voltage-source inverters (VSIs), which create motor voltages at high switching frequencies. The motor leads used to connect an ASD to a motor can behave like transmission lines for voltage pulses, which can be reflected at the motor terminals. The resulting oscillatory transient, known as the long-lead effect, can stress and consequently degrade the stator insulation system of a motor. This paper describes the results of tests to 1) determine the correlation between peak motor voltage and the length of motor leads and 2) determine the correlation between peak motor voltage and the switching frequency of the ASD Insulation failures like this usually are caused by voltage surges. Voltage surges are often the result of switching power circuits, lightning strikes, capacitor discharges and solid-state power devices.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 학술대회 논문집 전문대학교육위원
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• pp.16-21
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• 2002

Most adjustable-speed drives(ASDs) designed to operate 220[V] induction motors incorporate voltage-source inverters (VSIs), which create motor voltages at high switching frequencies. The motor leads used to connect an ASD to a motor can behave like transmission lines for voltage pulses, which can be amplified (reflected) at the motor terminals. The resulting oscillatory transient, known as the long-lead effect, can stress and consequently degrade the statorinsulation system of a motor. This Brief describes the results of tests to 1) determine the correlation between peak motor voltage and the length of motor leads and 2) determine the correlation between peak motor voltage and the switching frequency of the ASD Insulation failures like this usually are caused by voltage surges. Voltage surges are often the result of switching power circuits, lightning strikes, capacitor discharges and solid-state power devices.

• 한국정보통신학회논문지
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• 제20권9호
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• pp.1771-1777
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• 2016

본 논문에서는 나노와이어 N-채널 GAA MOSFET의 항복전압 특성을 측정과 3 차원 소자 시뮬레이션을 통하여 분석하였다. 측정에 사용된 나노와이어 GAA MOSFET는 게이트 길이가 250nm이며 게이트 절연층 두께는 6nm이며 채널 폭은 400nm부터 3.2um이다. 측정 결과로부터 나노와이어 GAA MOSFET의 항복전압은 게이트 전압에 따라 감소하다가 높은 게이트 전압에서는 증가하였다. 나노와이어의 채널 폭이 증가할수록 항복전압이 감소한 것은 floating body 현상으로 채널의 포텐셜이 증가하여 기생 바이폴라 트랜지스터의 전류 이득이 증가한 것으로 사료된다. 게이트 스트레스로 게이트 절연층에 양의 전하가 포획되면 채널 포텐셜이 증가하여 항복전압이 감소하고 음의 전하가 포획되면 포텐셜이 감소하여 항복전압이 증가하는 것을 알 수 있었다. 항복전압의 측정결과는 소자 시뮬레이션의 포텐셜 분포와 일치하는 것을 알 수 있었다.