• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.190-193
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• 2001

ZnO varistors have been widely used to protect power system and electronic system against overvoltages based on their excellent nonlinearity. In order to increase their protection capability, the fracture and protection technologies of arresters have to study according to their applications, namely ImA DC voltage, leakage currents, impulse residual voltages, withstanding capability to impulse surge, and energy absorption capability. ZnO varistors which have nonlinear current-voltage characteristic name a number of failure mechanism when ZnO elements absorb surge energies. Failure mode by thermal stress and Pin hole are among the most common failure mechanism at the high current surge current. In this study, the fracture mechaism of power arresters are introduced and protection technologies are researched. In particular the effect of thermal stress by surge currents to ZnO elements and methods against arc surge energy through withstand structure design of arrester are discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.255-258
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• 1998

In this paper. we designed and simmulated a ring-dot type piezoelectric transformer. As the result, piezoelectric transformer of 25${\times}25{\times}3.5mm$ size (Dot electrode diameter of Ilmm) show the maximum displacement, stress and output power. When the Input voltage of piezoelectric transformer was 155V. Output voltage show 30V and output power 9W at the load resistance of $100\Omega$

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.369-370
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• 2008

This paper describes the electric field distribution of high voltage polymer bushing with inner field shaper designs. The field control can be achieved by means of the designs of such internal field shaper. But high electric stress occurred between field shaper and central conductor by the closely space. In accordance, the floating and ring shield designs was importance for electric stress grading at critical parts of the bushing. The bushing has a central conductor, and internal ring shield or floating shield, gaps are formed between field shaper and ring shield. Accordance equipotential lines extend through gaps. Maxwell 2D simulator based on the boundary element method was also introduced in order to verify the reliability of the polymer bushing.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.687-690
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• 2003

Experimental results are presented for gate oxide degradation and its effect on device parameters under negative and positive bias stress conditions using NMOSFET's with 3 nm gate oxide. The degradation mechanisms are highly dependent on stress conditions. For negative gate voltage, both hole- and electron-trapping are found to dominate the reliability of gate oxide. However, with changing gate voltage polarity, the degradation becomes dominated by electron trapping. Statistical parameter variations as well as the "OFF" leakage current depend on those charge trapping. Our results therefore show that Si or O bond breakage by electron can be another origin of the investigated gate oxide degradation.gradation.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.11
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• pp.30-36
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• 1997

AlGaAs/GaAs HBTs are developed well enough to be commercialized as an active device in optical transmission system, but there remains the unanswered questions about reliability. In this paper we applied the reverse constant current stress at the high voltage in avalanche region for a long time to find out a new degradation mechanism of junctrion I-V. The unction off-set voltage at which the current vanishes to zero was shifted to the negative direction of applied bias due to the increment of leakage current as the stress time increases. It was identified that the degradation was induced by the hot carriers which were generated at space charge region and trapped at the interface between GaAs base and the passivation nitride enhancing the electric field across the nesa edge.

• Transactions on Electrical and Electronic Materials
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• v.18 no.1
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• pp.16-20
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• 2017

A RF-MEMS (radio-frequency microelectromechanical-system) based DPDT (double pole double throw) switch for the Ku band has been designed and analyzed for this article. The switch topology is based on the FG-CPW (finite ground-coplanar waveguide) configuration of a microstrip-transmission line. An FEM-based multiphysics solver is used for the evaluation of the spring constant, stress distribution, and pull-in voltage regarding the requirements of the switch-beam unit. The electromagnetic performance of the switch is investigated for a $675{\mu}m$ thick silicon substrate. For the operational frequency of 14.5 GHz, an insertion loss better than -0.3 dB, a return loss better than -40 dB, and input/output- and output-port isolations better than -35 dB are achieved for the switching unit.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2008.05a
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• pp.285-288
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• 2008

Even though many modular converters have several internal protection circuit blocks for various abnormal operation conditions, there are many failure cases on modular converters at real applications. In this paper, the control strategy for failure protection of converters with internal 'In-Hibit' function is investigated. As an example, for the MDl modular converters the in-hibit function application is realized and the test results shows that adopting in-hibit function while converter switching reduces the voltage and current stress. And the reduction of switching stress on converter will decrease failure rate on converters.

• Proceedings of the KIPE Conference
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• 2006.06a
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• pp.39-42
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• 2006

a current stress reduction technique for a boost integrated half-bridge (BIHB) DC/DC converter with voltage doubler type rectifier is proposed for digital car audio amplifier application. In the proposed circuit, two external capacitors are added parallel to the rectifier diodes in the secondary side of the transformer to shape the primary and the secondary current like rectangular waveforms in every switching instance. The experimental results of a 200W industrial sample show that the peak primary current decreases about by 10A. Thus, the proposed technique shows improved high efficiency.

• Journal of Power Electronics
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• v.17 no.5
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• pp.1195-1202
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• 2017

This paper presents a novel topology named a modified capacitor-assisted Z-source inverter (MCA-ZSI) based on the traditional ZSI. The impedance network of the proposed MCA-ZSI consists of two symmetrical cells coupled with two capacitors with an X-shape structure, and each cell has two inductors, two capacitors, and one diode. Compared with other topologies based on switched ZSI with the same number of components used at impedance network, the proposed topology provides higher boost ability, lower voltage stress across inverter switching devices, and lower capacitor voltage stress. The improved performances of the proposed topology are demonstrated in the simulation and experimental results.

• Proceedings of the KIEE Conference
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• 1999.11b
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• pp.406-408
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• 1999

In order to reduce the overall size and cost, researchers attempted to integrate the functions of power factor correction(PFC) and isolated dc-dc conversion into single power stage. However, single-stage isolated PFC converters have higher voltage stress and heavier loss when compared with a normal dc-dc converters. In this paper, we propose to add active clamping circuit to keep the switch voltage stress low and to achieve soft switching of electronic devices.