• Journal of Information Processing Systems
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• v.16 no.1
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• pp.132-144
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• 2020

Cloud computing is an emerging technology based on the concept of enabling data access from anywhere, at any time, from any platform. The exponential growth of cloud users has resulted in the emergence of multiple issues, such as the workload imbalance between the virtual machines (VMs) of data centers in a cloud environment greatly impacting its overall performance. Our axis of research is the load balancing of a data center's VMs. It aims at reducing the degree of a load's imbalance between those VMs so that a better resource utilization will be provided, thus ensuring a greater quality of service. Our article focuses on two phases to balance the workload between the VMs. The first step will be the determination of the threshold of each VM before it can be considered overloaded. The second step will be a task allocation to the VMs by relying on an improved and faster version of the meta-heuristic "simulated annealing (SA)". We mainly focused on the acceptance probability of the SA, as, by modifying the content of the acceptance probability, we could ensure that the SA was able to offer a smart task distribution between the VMs in fewer loops than a classical usage of the SA.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.185-186
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• 2005

Intrinsic gettering is usually used to improve wafer quality which is an important factor for reliable ULSI devices. The two-step annealing method was adopted in order to investigate interactions between oxygens and secondary defects during oxygen precipitation process in lightly and heavily boron doped silicon wafers with high energy $^{11}B^+$ ion implantation. Secondary defects were inspected nearby the projected range by high resolution transmission electron microscopy. Oxygen pileup was measured in the vicinity of the projected range by secondary ion mass spectrometry for heavily boron doped silicon wafers.

• Journal of Korean Vacuum Science & Technology
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• v.2 no.2
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• pp.97-100
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• 1998

We have investigated the effects of crystalline activation on solid phase crystallization (SPC) of amorphous silicon (a-Si) thin films. Wet blasting and self ion implantation were employed as the activation treatments to induce macro or micro crystalline damages on deposited a-Si films. Low temperature and larger grain crystallization were obtained by the applied two-step activation. High degree of crystallinity was also observed on both furnace and rapid SPC. crystalline activations showed the promotion of nucleation on the activated regions and the retardation of growth in an amorphous matrix in SPC. The observed behavior of two-step SPC was strongly dependent on the applied activation and annealing processes. It was also found that the diversified effects by macro and micro activations on the SPC were virtually diminished as the annealing temperature increased.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.57-57
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• 2003

High dielectric constant materials (high K) have attracted a great deal of interest because of the dramatic scaling down of DRAM capacitor reaching its physical limit in terms of reduction of thickness. Among high-K materials that can replace silicon dioxide, tantalum pentoxide (Ta2O5) thin film, with their high dielectric constant (∼25) and good step coverage, is the candidate of choice.

• Korean Journal of Materials Research
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• v.5 no.6
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• pp.723-731
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• 1995

P $b_2$S $r_2$( $Y_{1-x}$ C $a_{x}$)C $u_3$ $O_{8+}$$\delta$/ samples were prepared with x=0.4~0.6 and small $\delta$. To minimize the extent of oxidative decomposition reaction which occurs during the preparation of this phase, two annealing steps were adopted : First, sintered samples of P $b_2$S $r_2$( $Y_{1-x}$ C $a_{x}$)C $u_3$ $O_{8+}$$\delta$/ are oxygenated under 100% $O_2$, which leads to a large $\delta$(e.g., $\delta$=1.8). Second, the resulting samples are deoxygenated under 0.1~1.0% $O_2$in $N_2$, lowering $\delta$ to desired values. This two-step annealing procedure minimized the extent of oxidative decomposition. However, even with the two-step annealing procedure, the oxidative decomposition of P $b_2$S $r_2$( $Y_{1-x}$ C $a_{x}$)C $u_3$ $O_{8+}$$\delta$/ cannot be completely suppressed if $\delta$ is to be reduced to maximize $T_{c}$. Electrical resistivity data show that $T_{c}$(onset) is a function of hole concentration in the Cu $O_2$layer, and the optimum hole concentration for the maximum $T_{c}$ is achieved when $Ca^{2+}$is substituted for $Y^{3+}$between 0.5 and 0.6 A $T_{c}$(onset)=80K has been observed for one such sample, and this is the highest $T_{c}$(onset) yet reported for this compound.ed for this compound.nd.

• Progress in Superconductivity and Cryogenics
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• v.5 no.1
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• pp.31-34
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• 2003

Bi-2223 superconducting wires with 55 filaments were fabricated by stacking, drawing process with different heat-treatment histories. Two kinds of powders were prepared. One was pre-annealed at 760-820 $^{\circ}C$ and low oxygen partial pressure, and the other was only calcined state. Before rolling process, round wires were pre-annealed at 760 -820 $^{\circ}C$ and in a low oxygen partial pressure. We confirmed that pre-annealing step was to transform Bi-2212 orthorhombic structure from Bi-2212 tetragonal structure and to reduce the formation of second phases at superconducting wire. However Bi-2223 phases were formed at higher pre-annealing temperature. Bi-2223 conductor was needed frequently annealing at low temperature because pre-annealing at precursor powder brought about decrease in workability. We could achieve highest Je of 6500 A/$\textrm{cm}^2$ at the tape using Bi-2212 orthorhombic phase by introduced slightly overheating at the 1st sintering process.

• Korean Journal of Materials Research
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• v.24 no.2
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• pp.116-122
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• 2014

$Bi_2Sr_2CaCu_2O_x$(Bi-2212) and $Bi_2Sr_2Ca_2Cu_3O_y$(Bi-2223) high-Tc superconductors(HTS) have been manufactured by plasma spraying, partial melt process(PMP) and annealing treatment(AT). A Bi-2212/2223 HTS coating layer was synthesized through the peritectic reaction between a 0212 oxide coating layer and 2001 oxide coating layer by the PMP-AT process. The 2212 HTS layer consists of whiskers grown in the diffusion direction. The Bi-2223 phase and secondary phase in the Bi-2212 layer were observed. The secondary phase was distributed uniformly over the whole layer. As annealing time goes on, the Bi-2212 phase decreases with mis-orientation and irregular shape, but the Bi-2223 phase increases because a new Bi-2223 phase is formed inside the pre-existing Bi-2212 crystals, and because of the nucleation of a Bi-2223 phase at the edge of Bi-2212 crystals by diffusion of Ca and Cu-O bilayers. In this study the spray coated layer showed superconducting transitions with an onset Tc of about both 115 K, and 50 K. There were two steps. Step 1 at 115 K is due to the diamagnetism of the Bi-2223 phase and step 2 at 50 K is due to the diamagnetism of the Bi-2212 phase.

• Journal of the Korean Society for Heat Treatment
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• v.22 no.1
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• pp.23-26
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• 2009

Pt nanotubes with diameter of 200 nm were fabricated by simple and convenient method of Template-Wetting Process. Porous alumina membranes were prepared by 2 step anodic oxidation as the template. To improve wetting properties and lower surface energy, pt solution was mixed with polymer. Polymer was removed completely during annealing. Grain growth process of pt nanotubes during baking and furnace annealing was examined by FE-SEM and XRD.

• Journal of the Korean Society for Heat Treatment
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• v.21 no.1
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• pp.26-32
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• 2008

Effects of annealing treatment on microstructure and mechanical property of co-sputtered TiNi thin films were studied. As-deposited films showed amorphous state. However, above annealing temperature of $500^{\circ}C$ martensite phase (B19'), precipitate phase ($Ti_2Ni$) and a small amount of parent phase ($B_2$) were present, and phase transformation behaviors were three multi-step phase transformations $B19^{\prime}{\rightarrow}B_2$ and $B_2{\rightarrow}R-phase$ and $R-phase{\rightarrow}B19^{\prime}$. Increase of martensite transformation temperature, increase of microhardness and Young's modulus of TiNi films annealed above $500^{\circ}C$ were discussed in terms of precipitate phase.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.527-530
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• 2002

A lot of efforts have been focused on the optimization of PIT parameters for Bi-2223/Ag wire. In this paper, initial annealing of Bi-2223/Ag wire to transform Bi-2212 orthorhombic from Bi-2212 tetragonal Precursor was investigated. This initial annealing step at low oxygen partial pressure were to transform Bi-2212 orthorhombic structure and to reduce the formation of second phases at superconducting wire. However Bi-2223 Phases were appeared at higher annealing temperature. Critical currents(Je) of Bi-2223/Ag tapes were sintered at low oxygen Partial pressure were higher than that of the wires sintered at atmosphere condition. In order to investigate the effect of rolling reduction ratio, Bi-2223/Ag HTS tapes were rolled with different reduction ratio. There were no clear difference of Je and filaments shape with various rolling reduction ratio.