• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2000년도 춘계학술대회논문집
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• pp.202-205
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• 2000

The effect of two step cold rolling and intermediate annealing conditions on the microstructure and texture evolution in type 430 stainless steel has been investigated tin order to improve ridging characteristic and deep drawability. The rolling and recrystallization textures were examined by orientation distributionfunction(ODF) and electron backscattered diffraction(EBSD). The observation showed that the intensity of ${\gamma}$-fiber was increased with two-step cold rolling process and so ridging characteristic and deep drawability were considerably improved. The relation between these properties an texture evolution has been discussed.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 추계학술대회 논문집 학회본부 C
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• pp.416-418
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• 2000

Thin films of phase-pure perovskite $(Pb_{0.72}La_{0.28})Ti_{0.93}O_3$ (PLT) were deposited in-situ onto Pt/Ti/$SiO_2$/Si substrates by pulsed laser deposition. We have systematically investigated the variation of grain sizes depending on the process condition. Both in-situ annealing and ex-situ annealing treatments have been compared depending on the annealing time. The grain sizes of PLT thin films were successfully controlled 260 to 350 nm by changing process parameters. Microstructural and electrical properties of the film were investigated by C-V measurement, leakage current measurement and SEM. Two-step process to grow $(Pb_{0.72}La_{0.28})Ti_{0.93}O_3$ (PLT) films was adopted and verified to be useful to enlarge the grain size of the film and to enhance the leakage current characteristics.

• 한국전기전자재료학회논문지
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• 제11권9호
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• pp.705-710
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• 1998

Intrinsic gettering is usually to improve wafer quality, which is an important factor for reliable ULSI devices. In order to generate oxygen precipitation in lightly and heavily boron doped silicon wafers with or without high $^75 As^+$ ion implantation, the 2-step annealing method was adopted. After annealing, the were cleaved and etched with th Wright etchant. The morphology of cross section on samples was inspected by FESEM(field emission scanning electron microscopy). The morphology of unimplanted samples was rater rough than that of the implanted. Oxygen precipitation density observed by an optical microscope in lightly boron doped samples was about 3$\times10^6/cm^3$. However, in heavily boron doped samples, the density of oxygen precipitation was largest at $600^{\circ}C$ in 1st annealing, and decreased abruptly until $800^{\circ}C$, But it increased slightly at $1000^{\circ}C$ and was independent with the implantation.

• 대한공업교육학회지
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• 제33권1호
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• pp.249-264
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• 2008

본 연구에서는 저 에너지 이온 주입과 이중 열처리를 통하여 박막 $p^+-n$ 접합을 형성하였고, 보론 확산 모델을 가지고 새로운 시뮬레이터를 설계하여 이온 주입과 열처리 후의 보론 분포를 재현하였다. $BF_2$ 이온을 가지고 실리콘 기판에 저 에너지 이온 주입을 하였고, 이후 RTA(Rapid Thermal Annealing)와 FA(Furnace Annealing)를 통하여 열처리 과정을 수행하였다. 시뮬레이션을 위한 확산 모델은 점결함의 생성과 재결합, BI 쌍의 생성, 보론의 활성화와 침전 현상 등을 고려하였다. FA+RTA 열처리가 RTA+FA 보다 면저항 측면의 접합 특성에서 우수한 결과를 나타내었고, 시뮬레이터에서도 동일한 결과를 나타내었다. 따라서 본 연구를 통하여 박막접합을 형성할 때 열적 효율성을 고려하면 제안된 확산 시뮬레이터와 FA+RTA 공정 방법의 유용성을 기대할 수 있다.

• 한국전기전자재료학회논문지
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• 제30권11호
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• pp.734-739
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• 2017

We prepared $SnS_x$ thin films on both soda-lime glass (SLG) and molybdenum(Mo)/SLG substrates by a two-step process using a Sn precursor followed by sulfur reaction in rapid thermal annealing (RTA) at different sulfurization temperatures ($Ts=200^{\circ}C$, $230^{\circ}C$, $250^{\circ}C$, and $300^{\circ}C$) and annealing times ($t_s=10min$ and 30 min). The single SnS phase was dominant for $200^{\circ}C{\leq}T_s$<$250^{\circ}C$, while an additional phase of $SnS_2$ was appeared at $T_s{\geq}250^{\circ}C$ alongside SnS. The SnS grains in all the samples showed strong growth along the preferred [040] direction. The band-gap energy ($E_g$) of the films was estimated to be 1.24 eV.

• 전자공학회논문지A
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• 제31A권9호
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• pp.78-88
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• 1994

The electrical properties of TiM/TiSi$_{2}$ bilayer formed by rapid thermal anneal in NH$_{3}$ ambient after the Ti film is deposited on silicon cubstrate are investigated. N$^{+}$ contact resistance slightly increases with increasing annealing temperature with P$^{+}$ contact resistance decreases. The contact resistance of N$^{+}$ contance was less than 24[.OMEGA.] but P$^{+}$ thatn that of N$^{+}$ contact but the leakage current indicates degradation of the contact at high annealing temperature for both N$^{+}$ and contacts. The leakage current of N$^{+}$ Junction was less than 0.06[fA/${\mu}m^{2}$] but P$^{+}$ contact was 0.11-0.15[fA/${\mu}m^{2}$]. The junction breakdown voltage for N$^{+}$ junction remains contant with increasing annealing temperature while P$^{+}$ junction slightly decreases. The Electrical properties of a two step annealing are better than that of one step annealing. The Tin/TiSi$_{2}$ bilayer formed by RTA in NH$_{3}$ ambient reveals good electrical properties to be applicable at ULSI contact.

• E2M - 전기 전자와 첨단 소재
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• 제9권6호
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• pp.584-592
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• 1996

Coupling optical modulator which on the $LiTaO_3$ substrate is fabricated by using proton exchange method and self-aligned method. Proton exchange of proton diffusion method was applied to pattern a waveguide on $LiTaO_3$ substrate. The annealing at >$400^{\circ}C$ was carded out to control waveguide width and depth. The depths of the two annealed optical waveguides, which were measured by using .alpha.-step, were 1.435 K.angs. and 1.380 K.angs. Using .alpha.-step facility, we examined that the width of waveguides is increased from 5.mu.m to 6.45 .mu.m and 6.3.mu.m due to the annealing effects. The process of proton exchange was done at 150.deg. C for 120 min, >$200^{\circ}C$ for 60 min and annealing process was done at >$400^{\circ}C$ for 90 min, >$400^{\circ}C$ for 60 min. The high speed coupling optical modulator has very good figures of merits; the measured high frequency power were achieved.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.170-170
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• 1999

We studied Nb growth mode on Cu(100) surface by scanning tunneling microscopy (STM) at room temperature. Nb/Cu is immiscible at room temperature and thus is an ideal system for studying surface alloy formation. Initially deposited Nb atoms are incorporated subsurface on Cu(100). After annealing, they are preferentially found at step edges and appear as bright dots surrounded by dark rings. Ordering emerges from step edges as annealed. Ordered ({{{{ SQRT { 5} }$\times${{{{ SQRT { 5} }}}})R 26.6$^{\circ}$phase Nb structure is formed at $\theta$<0.2ML after annealing to 50$0^{\circ}C$. At higher coverage, $\theta$>0.25, annealing leads to p(2$\times$2) phase. due to large mismatch in lattice parameters, the domain is limited to a few tens of nm2. Growth kinetics of the system will be discussed.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2007년도 제33회 하계학술대회 초록집
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• pp.264-264
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• 2007

• 신재생에너지
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• 제17권4호
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• pp.36-45
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• 2021

To remove the Cu secondary phase remaining on the surface of a CIGSSe absorber layer manufactured by the two-step process, KCN etching was applied before depositing the CdS buffer layer. In addition, it was possible to increase the conversion efficiency by air annealing after forming the CdS buffer layer. In this study, various pre-treatment/post-treatment conditions wereapplied to the S-containing CIGSSe absorber layerbefore and after formation of the CdS buffer layer to experimentally confirm whether similareffects as those of Se-terminated CIGSe were exhibited. Contrary to expectations, it was noted that CdS air annealing had negative effects.