• Journal of the Optical Society of Korea
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• v.20 no.6
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• pp.799-806
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• 2016

We present a polarization-dependent prism array film for controlling the viewing angle distribution of liquid crystal (LC) display panels without loss of light efficiency. On a directional backlight unit, our polarization-dependent prism array film, made into a stacked bilayer with a well-aligned liquid crystalline reactive mesogen (RM) layer on the UV-imprinted prism structure, can continuously control the light refraction function of the prism array by electrically switching incident polarization states of a polarization-controlling layer prepared by a twisted nematic LC mode. The viewing angle control properties of the polarization-dependent prism array film are analyzed under different prism angle and refractive index conditions of the RM layer. A simple analytic model is also presented to describe the intermediate viewing angle distributions with continuously varying applied voltages and incident polarization states.

• Communications for Statistical Applications and Methods
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• v.28 no.3
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• pp.217-232
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• 2021

The Korea film industry has matured and the number of movie-watching per capita has reached the highest level in the world. Since then, movie industry growth rate is decreasing and even the total sales of movies per year slightly decreased in 2018. The number of moviegoers is the first factor of sales in movie industry and also an important factor influencing additional sales. Thus it is important to predict the number of movie audiences. In this study, we predict the cumulative number of audiences of films using stacking, an ensemble method. Stacking is a kind of ensemble method that combines all the algorithms used in the prediction. We use box office data from Korea Film Council and web comment data from Daum Movie (www.movie.daum.net). This paper describes the process of collecting and preprocessing of explanatory variables and explains regression models used in stacking. Final stacking model outperforms in the prediction of test set in terms of RMSE.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.653-655
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• 2003

Using stacked organic gate insulators and active layer of pentacene deposited at elevated temperatures, pentacene-based organic thin-film transistors(OTFTs) with improved electrical characteristics have been fabricated. Stacked PVP(Polyvinylphenol)-polystyrene gate insulators could compensate the demerits and take advantage of the merits of each other [1]. Also, for the better device performance, moderate substrate heating and high deposition rate of pentacene active layer was adopted [2, 3].

• 한국신재생에너지학회:학술대회논문집
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• 2007.06a
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• pp.326-329
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• 2007

$CuInS_{2}$ thin films were synthesized by sulpurization of Cu/In Stacked elemental layer deposited onto glass Substrates by vacuum furnace annealing at temperature 200[$^{\circ}C$]. And structural and electrical properties were measured in order to certify optimum conditions for growth of the ternary compound semiconductor $CuInS_{2}$ thin films with non-stoichiometry composition. $CuInS_{2}$ thin film was well made at the heat treatment 200[$^{\circ}C$] of SLG/Cu/ln/S stacked elemental layer which was prepared by thermal evaporator, and chemical composition of the thin film was analyzed nearly as the proportion of 1 : 1 : 2. Physical properties of the thin film were investigated at various fabrication conditions substrate temperature, annealing and temperature, annealing time by XRD, FE-SEM and Hall measurement system. At the same time, carrier concentration, hall mobility and resistivity of the thin films was $9.10568{\times}10^{17}$ [$cm^{-3}$], 312.502 [$cm^{2}/V{\cdot}s$] and $2.36{\times}10^{-2}$ [${\Omega}{\cdot}cm$], respectively.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.9
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• pp.29-35
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• 1992

Dielectric thin film of N/O (Si$_{3}N_[4}/SIO_{2}$) for high density stacked dynamic-RAM cell was formed by LPCVD and oxidation(Dry & pyrogenic oxidation methods) of the top Si$_{3}N_[4}$ film. The thickness, structure and composition of this film were measured by ellipsometer, high frequency C-V meter, high resolution TEM, AES, and SIMS. The thickness limit of Si$_{3}N_[4}$ film in making thin N/O structure layer was 7nm. In this experiment, the film with thinner than 7nm was not thick enough as oxygen diffusion barrier, and oxygen punched through the film and interfacial oxidation occurred at the phase boundary between Si$_{3}N_[4}$ and polycrystalline silicon electrode.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1739-1741
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• 2007

A 3D projection display using stacked screens to display the near and far images, respectively, is developed. The front screen is made of a scattering polarizer film, and the far image on the rear screen is clearly visible through it. The image is perceived as three-dimensional, and no eyestrain is suffered.

• Journal of Welding and Joining
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• v.27 no.3
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• pp.32-37
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• 2009

• Current Photovoltaic Research
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• v.8 no.3
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• pp.94-101
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• 2020

This study was trying to focus on achieving high efficiency of multi junction solar cell with thin film silicon solar cells. The proposed thin film Si-Ge/c-Si tandem junction solar cell concept with a combination of low-cost thin-film silicon solar cell technology and high-efficiency c-Si cells in a monolithically stacked configuration. The tandem junction solar cells using amorphous silicon germanium (a-SiGe:H) as an absorption layer of upper sub-cell were simulated through ASA (Advanced Semiconductor Analysis) simulator for acquiring the optimum structure. Graded Ge composition - effect of E_g profiling and inserted buffer layer between absorption layer and doped layer showed the improved current density (J_sc) and conversion efficiency (η). 13.11% conversion efficiency of the tandem junction solar cell was observed, which is a result of showing the possibility of thin film Si-Ge/c-Si tandem junction solar cell.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.9-12
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• 1998

Film characteristics of thin reoxidized nitrided oxides were investigated by SIMS analysis and C-V method in order to use the gate dielectric for charge-trap type NVSMs instead of ONO stacked layers. Nitric oxide(NO) annealed film has the nitrogen content sharply peaked at the Si-SiO$_2$ interface, while it is broad for nitrous oxide($N_2$O) ambient. The nitrogen peak concentration increased with anneal temperature and time. The position of nitrogen content in the oxide layer was due to be precisely controlled. For the films annealed NO ambient at 80$0^{\circ}C$ for 30min. followed by reoxidized at 85$0^{\circ}C$, the maximum memory window of 3.5V was obtained and the program condition was +12V, 1msec for write and -l3V, 1msec for erase.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1268-1269
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• 2008

$CuInS_2$ thin films were fabricated by sulpurization of Cu/In Stacked elemental layer deposited onto glass substrates by vacuum annealing at various temperatures. And structural and electrical properties were measured in order to certify optimum conditions for growth of the ternary compound semiconductor $CuInS_2$ thin films by composition ratio. Physical properties of the thin film were investigated at various fabrication conditions; substrate temperature, annealing temperature and annealing time by XRD, FE-SEM and hall measurement system. $CuInS_2$ thin film was well made at the heat treatment 200[$^{\circ}C$] of SLG/Cu/In/S stacked elemental layer.