• Journal of the Institute of Electronics Engineers of Korea TC
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• v.41 no.12
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• pp.125-130
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• 2004

The characteristics of on-chip spiral rectangular inductors in CMOS process are investigated through the simulation and experiment. The ADS-momentum is used for EM simulation, and the spiral inductors are fabricated with Hynix 0.35㎛ CMOS process. This research mainly concerned the effects of the geometric change in terms of the number of turns and the width of micro strip line. The measured and simulated results show that the Hynix 0.35㎛ process could support a top metal spiral inductor of 1nH to 6nH with Q-factor less than 5.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.15 no.4
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• pp.2330-2334
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• 2014

In this study, we confirmed the frequency characteristics of planar spiral inductor based on non-contact method AC coupling for wireless signal transmission. The dielectric constant variation of the substrate does not directly effect the inductance of device but effect the electrostatic capacity of device. Therefore, its change self-resonance frequency. The thickness increment of the substrate increase inductance but decrease self-resonance frequency. Because, the thickness decrement of the substrate make the inside electrostatic capacity increment.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.2
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• pp.257-262
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• 2008

In this paper, the key parameters of $CO_2$ laser(focus depth, air blow rate, total laser beam time, number of pulse) are experimented for thru-hole and scribing line on AIN(aluminum nitride) substrate with high thermal conductivity. And, microstrip line & spiral planar inductor are fabricated on AIN substrate using 5 um Cu-plating with self-masking technique. The microstrip line of AIN has 0.1 dB/mm attenuation at 10 GHz and 6 nH spiral planar inductor has 56 maximum quality factor at 1 GHz. Thus, the AIN substrate is promising for GHz applications of high power area.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.19 no.7
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• pp.1296-1303
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• 1994

In this paper, a design of active inductors and their application in a frequency converter are proposed. In MMIC design, passive spiral inductor takes larger area than any other passive and active elements. A conventional spiral inductor generates undesired crosstalk, and its performance cannot have certainty and reproducibility. Meanwhile the active inductor eliminates these drawbacks, and operates for much wider bandwidth. Furthermore, its size is smaller and nearly independent of inductance. the performance of MMIC frequency converter with active inductors is directly compared with that of the frequency converters with spiral inductors. The size is 28.6% smaller with better performance in MMIC frequency converter.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.10
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• pp.826-831
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• 2009

In this paper, a high power RF amplifier module using AlN substrate of high thermal conductivity has been proposed. This RF amplifier module has the advantage of compact size and effective heat dissipation for the packaging of high power chip. To fabricate the thru-hole and scribing line on AlN substrate, the key parameters of $CO_2$ laser were experimented. And then, microstrip lines and spiral planar inductors were fabricated on an AlN substrate using the thin-film process. The fabricated microstrip lines on the AlN substrate has an attenuation value of 0.1 dB/mm up to 10 GHz. The fabricated spiral planar inductor has a high quality factor, a maximum of about 62 at 1 GHz for a 5.65 nH inductor. Packaging of a RF power amplifier was implemented on an AlN substrate with thru-hole. From the measured results, the gain is 24 dB from 13 to 15 GHz and the output power is 33.65 dBm(2.3 W).

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.3
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• pp.149-167
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• 2004

Passive components are indispensable in the design and development of microchips for high-frequency applications. Inductors in particular are used frequently in radio frequency (RF) IC's such as low-noise amplifiers and oscillators. This paper gives a broad overview on the on-chip spiral inductors. The design concept and modeling approach of the typical square-shaped spiral inductor are first addressed. This is followed by the discussions of advanced structures for the enhancement of inductor performance. Research works reported in the literature are summarized to aid the understanding of the recent development of such devices.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.9
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• pp.21-27
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• 1997

Square spiral inductors are designed with EM program in accordance with the inner diameter and the metal thickness which is 0.2.mu.m and 20.mu.m respectively. We propose a parameter extraction method based on the S-parameter. Lumped equivalent circuits of spiral inductors are analyed with reflection coefficient S$_{11}$, of witch freqency rnage is 1~10GHz. When metal thickness is 0.2.mu.m, S$_{11}$ with EM simulation is not the same as S$_{11}$ that of SPICE simulation. So we suggests a new lumped equivalent circuits which compensate circuits. Te new lumped equivalent circuits are adequate for other inductor with small scale at high frequencies.ncies.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.3
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• pp.311-320
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• 2008

In this paper, a new variable active inductor using a conventional grounded active inductor with feedback variable LC-resonator is proposed. The grounded active inductor is realized by the gyrator-C topology and the variable LC-resonator is realized by the low-Q spiral inductor and varactor. This variable LC-resonator can compensate the degradation of Q-factor due to parasitic capacitance of a transistor, and the frequency range with high Q-factor is adjustable by resonance frequency adjustment of LC-resonator. The fabricated variable active inductor with Magnachip $0.18{\mu}m$ CMOS process shows that high-Q frequency range can be adjusted according to varactor control voltage from 4.66 GHz to 5.45 GHz and Q-factor is higher than 50 in the operating frequency ranges. The measured inductance at 4.9GHz can be controlled from 4.12 nH to 5.97 nH by control voltage.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.5
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• pp.8-15
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• 2002

We optimally designed the VCO(voltage-controlled oscillator) with spiral inductor using the MOSIS HP 0.5${\mu}{\textrm}{m}$ CMOS process. With the developed SPICE model of spiral inductor, the quality factor of spiral inductor was maximized at the operating frequency by varying the layout parameters, e.g., metal width, number of turns, radius, space of the metal lines. For the operation frequency of 2㎓, the inductance of about 3nH, and the MOSIS HP 0.5 CMOS process with the metal thickness of 0.8${\mu}{\textrm}{m}$, oxide thickness of 3${\mu}{\textrm}{m}$, the optimal width of metal lines is about 20${\mu}{\textrm}{m}$ for the maximum Quality factor. With the optimized spiral inductor, the VCO with LC tuning tank was designed, fabricated and measured. The measurements were peformed on-wafer using the HP8593E spectrum analyzer. The oscillation frequency was about 1.610Hz, the frequency variation of 250MHz(15%) with control voltage of 0V - 2V, and the phase noise of -108.4㏈c(@600KHz) from output spectrum.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.7
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• pp.17-24
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• 1998

We proposed a novel bondwire inductor buried in plastic package for low cost MMIC and characaterized the electrical perofmrance in a wide frequency range using the full-wave analysis of finite element method(FEM), and then we fabricated and measured the scale-up model in order to prove the characteristics. Th ebondwire inductor has higher quality factor and higher cutoff frequency than the conventional spiral inductor designed n the same area as the bondwire inductor. Since the air-bridge process is not requried for the bondwire inductor, it is very suitable for low cost plastic-packaged MMIC production. The bondwire inductor has the field distribution localized around the bondwire inductor and hence is more compatible to the crosstalk problems.