1 |
John R Long and Miles A Copeland, The Modeling, Characterization, and Design of Monolithic Inductors for Silicon RF IC's, IEEE Journal of Solid-State Circuits, Vol 32, March 1997
DOI
ScienceOn
|
2 |
L F Tiemeijer, D Leenaerts, N Pavlovic, and R J Havens, Record Q spiral inductors in standard CMOS, IEEE International Electron Devices Meeting, Pages 40.7.1-40.7.3, Dec 2001
DOI
|
3 |
J N Burghartz, M Soyuer, and K A Jenkins, Microwave inductors and capacitors in standard multilevel interconnect silicon technology, IEEE Trans Microwave Theory and Techniques, Vol 44, Pages 100-104, 1996
DOI
ScienceOn
|
4 |
Sunderarajan S Mohan, The Design, Modeling And Optimization Of On-Chip Inductor And Transformer Circuit, Doctoral dissertation, Stanford University, 1999
|
5 |
Frederick W Grover, Inductance Calculations, New York, D Van Nostrand Company, Inc 1946
|
6 |
S Jenei, B K J C Nauwelaers, and S Decoutere. Physics-based closed-form inductance expresstion for compact modeling of intergrated spiral inductors, IEEE Journal of Solid-State Circuits, Vol 37, Pages 77-80, Jan 2002
DOI
ScienceOn
|
7 |
H M Greenhouse, Design of planar rectangular microelectronic inductors, IEEE Transactions on Parts, Hybrids, and Packaging, Vol 10, Pages 101-109, 1974
DOI
|
8 |
C Patrick Yue and S Simon Wong, Physical modeling of spiral inductors on silicon, IEEE Transactions on Electron Devices, Vol 47, March 2000
DOI
ScienceOn
|
9 |
K B Ashby, W C Finley, J J Bastek, S Moinian, and I A Koullias, High Q inductors for wireless applications in a complementary silicon bipolar process, Proc Bipolar/BiCMOS Circuits and Technology Meeting, Pages, 179-182. 1994
DOI
|
10 |
Seung-Min Oh, Chang-Wan Kim. and Sang-Gug Lee A 74%, 1.56 -2.71 GHz, wide-tunable LC-tuned VCO in 0.35
DOI
ScienceOn
|
11 |
Ken Boak, An introduction to telephone line interfacing using the PIC microcontroller, http // puggy symonds net/-catalyticideas/rat_ring/index
|
12 |
C Patrick Yue, On-Chip Spiral Inductors for Silicon-Based Radio-Frequency Integrated Circuits, Doctoral Dissertation, Stanford University, 1998
|
13 |
Tsui Chiu, Integrated On-Chip Inductors For RadIO Frequency CMOS Circuits, Master Drssertatron, Hong Kong Polytechnic University, 2003
|
14 |
Jun Zou, Chang Liu, D R Trainor, J Chen, J E Schutt-Aine, and P L Chapman, Development of three-dimensional inductors using plastic deformation magnetic assembly (PDMA), IEEE Trans Microwave Theory and Techniques, Vol 51, Pages 1067- 1075, 2003
DOI
ScienceOn
|
15 |
Young-Jun Kim and M G Allen, Integrated solenoid-type inductors for high frequency applications and their characteristics, IEEE Electronic Components and Technology Conference, Pages 1247-1252, May 1998
DOI
|
16 |
D C Edelstein and J N Burghartz, Spiral and solenoidal inductor structures on silicon using Cu-damascene interconnects, Proc IEEE Interconnect Technology Conference, Pages 18-20, June 1998
DOI
|
17 |
N M Nguyen and R G Meyer, Si IC-compatible inductors and LC passive filters, IEEE Journal of Solid-State Circuits, Vol 25, Pages 1028-1031, Aug 1990
DOI
ScienceOn
|
18 |
S Chaki, S Aono, N Anodoh, Y Sasaki, N Tanino, and O Ishihara, Experimental study on spiral inductors, Digest of IEEE International Microwave Theory and Techniques-Symposium, 1995
|
19 |
T H Lee, The Design of CMOS Radio-Frequency Integrated Circuits, Cambridge University Press, 2002
|
20 |
Ali M Niknejad and Robert G Meyer, Design, Simulation and Applications of Inductors and Transformers for Si RF ICs, Kluwer Academic Publishers, 2000
|
21 |
T H Lee and S S Wong, CMOS RF Integrated circuits at 5 GHz and beyond, Proc IEEE, Vol 88. pp 1560-1571. Oct 2000
DOI
ScienceOn
|
22 |
K T Chan, C H Huang, A Chin, M F Li, Dim-Lee Kwong, S P McAlister, D S Duh, and W J Lin, Large Q-factor improvement for spiral inductors on silicon using proton implantation, IEEE Microwave and Wireless Components Letters, Vol 13, Pages 460-462, Nov 2003
DOI
ScienceOn
|
23 |
H Yoshida, H Suzuki, Y Kinoshita, H Fujii, and T Yamazaki, An RF BiCMOS process using high spiral inductor withpremetal deep trenches and a dual recessed bipolar collector sink, IEEE International Electron Devices Meeting, Pages 213-216, Dec 1998
DOI
|
24 |
Ju-Ho Son, Sun-Hong Kim, Seok-Woo Choi, Do-Hwan Rho, and Dong-Yong Kim, Multilevel monolithic 3D inductors on silicon, Proc IEEE Midwest Circuits and Systems Symposium, Vol 2, Pages 854-857, Aug 2001
DOI
|
25 |
J N Burghartz, Progress in RF inductors on Silicon-Understanding Substrate Losses, Digest of IEEE lnternational Electron Devices Meeting, Pages 523-526, Dec 1998
DOI
|
26 |
Jun-Bo Yoon, Yun-Seok Choi, Byeong-Il Kim, Yunseong Eo, and Euisik Yoon, CMOS-compatible surface-nucromachined suspended-spiral inductors for multi-GHz silicon RF ICs, IEEE Electron Device Letters, Vol 23, Pages 591-593, Oct 2002
DOI
ScienceOn
|
27 |
Liang-Hung Lu, G E Ponchak, P Bhattacharya and L P B Katehi, High-Q X-band and K-band Micromachined Spiral inductors for use in Si-based integrated circuits, Digest of Silicon Monolithic Integrated Circuits in RF Systems, Pages 108-112, April 2002
DOI
|
28 |
R Mernyei, R Darrer, M Pardoen, and A Sibrai, Reducing the substrate losses of RF integrated inductors, IEEE MIcrowave and Guided Wave Letters, Vol 8, Pages 300-301, Sept 1998
DOI
ScienceOn
|
29 |
K Murata, T Hosaka, and Y Sugimoto, Effect of a ground shield of a Silicon on-chip spiral inductor, Asia-Pacific Microwave Conference, Pages 177-180, Dec 2002
DOI
|
30 |
Y E Chen, D Bien, D Heo, and J Laskar, Q-enhancement of spiral inductor with N+-diffusion patterned ground shields, Digest of IEEE International Microwave Symposium, Vol 2, Pages 1289-1292, May 2001
DOI
|
31 |
D M Krafcsik and D E Dawson, A Closed-Form Expression for Representing the Distributed Nature of the Spiral inductor, Microwave and Millimeter- Wave Monolithic Circuits, Vol 86. Pages 87-92, June 1986
DOI
|
32 |
X Z Xiong, V F Fusco, and B Toner, Optimized design of spiral inductors for Si RF IC's, High Frequency Postgraduate Student Colloquium, Pages 51-58, Sept 2002
DOI
|
33 |
H Lakdawala, X Zhu, H Luo, S Santhanam, L R Carley, and G K Fedder, Micromachined high-Q inductors in a 0.18- copper interconnect low-k dielectric CMOS process, IEEE Journal ot Solid- State Circuits, Vol 37, Pages 394-403, Mar 2002
DOI
ScienceOn
|
34 |
Joonho Gil and Hyungcheol Shin, Simple wideband on-chip inductor model for silicon-based RF ICs, International Conference on Simulation of Semiconductor Processes and Devices, Pages 35-38, Sept 2003
DOI
|
35 |
H B Erzgraber, M Pierschel, G G Fischer, T Grabolla, and A Wolff, High performance integrated spiral inductors based on a minimum AC difference voltage principle,Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, Pages 71-74, April 2000
DOI
|
36 |
C P Yue and S S Wong, On-chip spiral inductors with patterned ground shields for Si-based RF ICs, IEEE Journal of Solid-State Circuit, Vol 33, Pages 743-752, May 1998
DOI
ScienceOn
|
37 |
Chia-Hsin Wu, Chih-Chun Tang, and Shen-Iuan Liu, Analysis of on-chip spiral inductors using the distributed capacitance model, IEEE Journal of Solid-St Circuits, Vol 38, Pages 1040-1044, June 2003
DOI
ScienceOn
|
38 |
Sang-Gug Lee, Gook-Ju Ihm, and Won-Chul Son, Design and analysis of symmetric dual-layer spiral inductors for RF integrated circuits, IEEE Asia Pacific Conference, Pages 5-8, 1999
DOI
|
39 |
Feng Ling, Jiming Song, Telesphor Kamgaing, Yingying Yang, William Blood, Michael Petras, and Thomas Myers, Systematic analysis of inductors on silicon using EM simulations, Electronic Components and Technology Conference, 2002
DOI
|
40 |
Ban-Leong Ooi, Dao-Xian Xu, and Pang-Shyan Kooi, A comprehensive explanation on the high quality characteristic of symmetrical octagonal spiral inductor, IEEE Radio Frequency Integrated Circuits Symposium, Pages 259-262, June 2003
|
41 |
Chih-Chun Tang, Chia-Hsin Wu, and Shen-Iuan Liu, Miniature 3-D inductors in standard CMOS process, IEEE Journal of Solid-State Circuits, Vol 37, Pages 471-480, 2002
DOI
ScienceOn
|
42 |
T Kamgaing, T Myers. M Petras, and M Miller, Modeling of frequency dependent losses in two-port and three-port inductors on silicon, IEEE Radio Frequency Integrated Circuits Symposium, Pages 307-310, 2002
DOI
|
43 |
F M Rotella, V Blaschke, and D Howard, A broad-band scalable lumped-element inductor model using analytic expressions to incorporate skin effect, substrate loss, and proximity effect, Digest of IEEE International Electron Device Meeting, Pages 471-474, Dec 2002
DOI
|
44 |
D Melendy, P Francis, C Pichler, Hwang Kyuwoon, G Srinivasan, and A Weisshaar, Wide-band compact modeling of spiral inductors in RFICs, Digest of Microwave Symposium, Pages 717-720, June 2002
DOI
|
45 |
W B Kuhn and N M Ibrahim, Approximate analyticall modeling of current crowding effects in multi-turn spiral inductors, Digest of MIcrowave Symposium. Pages 405-408, June 2002
DOI
|
46 |
Ban-Leong Ooi, Dao-Xian Xu, Pang-Shyan Kooi, and Fu-Jiang Lin, An Improved prediction of series resistance in spiral inductor modeling with eddy-current effect. IEEE Trans Microwave Theory and Techniques, Vol 50, Pages 2202-2206, Sept 2002
DOI
ScienceOn
|
47 |
Yu Cao, R A Groves, N D Zamdmer, J O Plouchart, R A Wachnik, Xuejue Huang, T J King, and Chenming Hu, Frequency-independent equivalent circuit model for on-chip spiral inductors, Proc IEEE Custom Integrated Circuits Conference, pp 217-220, 2002
DOI
|
48 |
J O Voorman, Continuous-time analog integrated filters, IEEE Press, 1993
|
49 |
H E Bryan, Printed inductors and capacitors, Tele-tech and Electronic Industries, December 1955
|
50 |
H Feng, G Jelodin, K Gong, R Zhan, Q Wu, C Chen, and A Wang, Super compact RFIC inductors in 0.18 CMOS with copper interconnects, IEEE RadIo Frequency Integrated Circuits Symposium, Pages 443-446, June 2002
DOI
|
51 |
Jose M Lopez-Villegas, Josep Samitier, Charles Cane, Pere Losantos, and Joan Bausells, Improvement of the quality factor of RF integrated Inductors by Layout Optimization, IEEE Transactions on Microwave Theory and Techniques, Vol 48, January 2000
DOI
ScienceOn
|
52 |
J Crols, P Kinget, J Craninckx, and M Steyeart, An analytical model of planar inductors on lowly doped silicon substrates for analog design up to 3GHz, Digest of VLSI Circuits, pp 28-29, 1996
DOI
|