• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.10 no.6
• /
• pp.425-433
• /
• 2000

The stochiometric mix of evaporating materials for the $CuGaTe_2$single crystal thin films was prepared from horizontal furnance. Using extrapolation method of X-ray diffraction patterns for the $CuGaTe_2$polycrystal, it was found tetragonal structure whose lattice constant $a_0 and c_0$ were 6.025 $\AA$ and 11.931 $\AA$, respectively. To obtain the single crystal thin films, $CuGaTe_2$mixed crystal was deposited on throughly etched semi-insulator GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $670^{\circ}C$ and $410^{\circ}C$ respectively, and the thickness of the single crystal thin films is 2.1$\mu\textrm{m}$. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). Hall effect on this sample was measured by the method of van der Pauw and studied on carrier density and mobility dependence on temperature. The carrier density and mobility of $CuGaTe_2$single crystal thin films deduced from Hall data are $8.72{\times}10{23}$개 $\textrm m^3$, $3.42{\times}10^{-2}$ $\textrm m^2$/V.s at 293K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the $CuGaTe_2$single crystal thin film, we have found that the values of spin orbit coupling $\Delta$s.o and the crystal field splitting $\Delta$cr were 0.0791 eV and 0.2463 eV at 10 K, respectively. From the PL spectra at 10 K, the peaks corresponding to free bound excitons and D-A pair and a broad emission band due to SA is identified. The binding energy of the free excitons are determined to be 0.0470 eV and the dissipation energy of the donor-bound exciton and acceptor-bound exciton to be 0.0490 eV, 0.0558 eV, respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.25 no.5
• /
• pp.173-181
• /
• 2015

A stoichiometric mixture of evaporating materials for $BaIn_2S_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $BaIn_2S_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $620^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by double crystal X-ray diffraction (DCXD). The carrier density and mobility of $BaIn_2S_4$ single crystal thin films measured from Hall effect by van der Pauw method are $6.13{\times}10^{17}cm^{-3}$ and $222cm^2/v{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $BaIn_2S_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=3.0581eV-(3.9511{\times}10^{-3}eV/K)T^2/(T+536K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $BaIn_2S_4$ have been estimated to be 182.7 meV and 42.6 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $BaIn_2S_4/GaAs$ epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_1$-, $B_1$-exciton for n = 1 and $C_{24}$-exciton peaks for n = 24.

• The Journal of the Petrological Society of Korea
• /
• v.25 no.3
• /
• pp.211-230
• /
• 2016

Detailed mapping along the Keumwang fault reveals a complex history of multiple brittle reactivations following late Jurassic and early Cretaceous ductile shearing. The fault core consists of a 10~50 m thick fault gouge layer bounded by a 30~100 m thick damaged zone. The Pre-cambrian gneiss and Jurassic granite underwent at least six distinct stages of fault movements based on deformation environment, time and mechanism. Each stage characterized by fault kinematics and dynamics at different deformation environment. Stage 1 generated mylonite series along the Keumwang shear zone by sinistral ductile shearing during late Jurassic and early Cretaceous. Stage 2 was a mostly brittle event generating cataclasite series superimposed on the mylonite series of the Keumwang shear zone. The roundness of pophyroclastes and the amount of matrix increase from host rocks to ultracataclasite indicating stronger cataclastic flow toward the fault core. At stage 3, fault gouge layer superimposed on the cataclasite generated during stage 2 and the sedimentary basins (Umsung and Pungam) formed along the fault by sinistral strike-slip movement. Fragments of older cataclasite suspended in the fault gouge suggest extensive reworking of fault rocks at brittle deformation environments. At stage 4, systematic en-echelon folds, joints and faults were formed in the sedimentary basins by sinistral strike-slip reactivation of the Keumwang fault. Most of the shearing is accommodated by slip along foliations and on discrete shear surfaces, while shear deformation tends to be relatively uniformly distributed within the fault damage zone developed in the mudrocks in the sedimentary basins. Fine-grained andesitic rocks intruded during stage 4. Stage 5 dextral strike-slip activity produced shear planes and bands in the andesitic rocks. ESR(Electron Spin Resonance) dates of fault gouge show temporal clustering within active period and migrating along the strike of the Keumwang fault during the stage 6 at the Quaternary period.

• Korean Journal of Materials Research
• /
• v.20 no.11
• /
• pp.606-610
• /
• 2010

Films consisting of a silicon quantum dot superlattice were fabricated by alternating deposition of silicon rich silicon nitride and $Si_3N_4$ layers using an rf magnetron co-sputtering system. In order to use the silicon quantum dot super lattice structure for third generation multi junction solar cell applications, it is important to control the dot size. Moreover, silicon quantum dots have to be in a regularly spaced array in the dielectric matrix material for in order to allow for effective carrier transport. In this study, therefore, we fabricated silicon quantum dot superlattice films under various conditions and investigated crystallization behavior of the silicon quantum dot super lattice structure. Fourier transform infrared spectroscopy (FTIR) spectra showed an increased intensity of the $840\;cm^{-1}$ peak with increasing annealing temperature due to the increase in the number of Si-N bonds. A more conspicuous characteristic of this process is the increased intensity of the $1100\;cm^{-1}$ peak. This peak was attributed to annealing induced reordering in the films that led to increased Si-$N_4$ bonding. X-ray photoelectron spectroscopy (XPS) analysis showed that peak position was shifted to higher bonding energy as silicon 2p bonding energy changed. This transition is related to the formation of silicon quantum dots. Transmission electron microscopy (TEM) and electron spin resonance (ESR) analysis also confirmed the formation of silicon quantum dots. This study revealed that post annealing at $1100^{\circ}C$ for at least one hour is necessary to precipitate the silicon quantum dots in the $SiN_x$ matrix.

• Journal of the Korean Magnetics Society
• /
• v.21 no.3
• /
• pp.88-92
• /
• 2011

We grew $Zn_{0.4}Fe_{2.6}O_4$ thin films using Pulsed Laser Deposition and studied their crystal structure and magnetical characteristics as a function of growth temperature ($T_g$). For the film with $T_g=300^{\circ}C$, X-ray reflections from ${\alpha}-Fe_2O_3$ and ZnO were observed. However, when $T_g$ was increased from 300 to $500^{\circ}C$, crystal structure of inverse spinel was stabilized with the crystal orientation of $Zn_{0.4}Fe_{2.6}O_4(111)/Al_2O_3(0001)$ without any detection of ${\alpha}-Fe_2O_3$ and ZnO phases. The surface morphology shows flattening behavior with increasing $T_g$ from 300 to $500^{\circ}C$. These observations indicate that Zn is substituted into tetrahedron A-site of the inverse-spinel $Fe_3O_4$. M-H curves exhibit clear ferromagnetism for the sample with $T_g=500^{\circ}C$ whereas no ferromagnetism is observed for the film with $T_g=300^{\circ}C$.

• KSCE Journal of Civil and Environmental Engineering Research
• /
• v.33 no.4
• /
• pp.1665-1673
• /
• 2013

Recently, the interest and demand on free formed structure providing aesthetic value as well as functionality has been increasing. Formwork has numerous advantages such as high strength, convenience, accuracy and good quality of surface roughness. Nevertheless, it increases construction cost and period to build complex shapes. For these purpose, deposition construction systems such as Contour Crafting and Concrete Printing have been developed with active collaboration between university and industry by applying the rapid prototyping technology to the construction industry in USA and England. Since there has been no related research in Korea, the possibility of spin-off technology and its fusion cannot be expected. In this paper, design elements including mechanical system and control system related to automatic deposition construction system prototype for constructing a free curved structure without mold are described. As for an appropriate material for the system, fiber reinforced mortar was selected by experiments on compressive strength, fluidity, viscosity and setting time. By performing transfer and extrusion experiments, the possibility of the development of deposition construction system was demonstrated. Based on this research results, it is required to keep the automatic deposition construction system improve and extend it into the new application area in construction industry.

• Korean Journal of Materials Research
• /
• v.23 no.12
• /
• pp.714-721
• /
• 2013

A stoichiometric mixture of evaporating materials for $ZnAl_2Se_4$ single-crystal thin films was prepared in a horizontal electric furnace. These $ZnAl_2Se_4$ polycrystals had a defect chalcopyrite structure, and its lattice constants were $a_0=5.5563{\AA}$ and $c_0=10.8897{\AA}$.To obtain a single-crystal thin film, mixed $ZnAl_2Se_4$ crystal was deposited on the thoroughly etched semi-insulating GaAs(100) substrate by a hot wall epitaxy (HWE) system. The source and the substrate temperatures were $620^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the single-crystal thin film was investigated by using a double crystal X-ray rocking curve and X-ray diffraction ${\omega}-2{\theta}$ scans. The carrier density and mobility of the $ZnAl_2Se_4$ single-crystal thin film were $8.23{\times}10^{16}cm^{-3}$ and $287m^2/vs$ at 293 K, respectively. To identify the band gap energy, the optical absorption spectra of the $ZnAl_2Se_4$ single-crystal thin film was investigated in the temperature region of 10-293 K. The temperature dependence of the direct optical energy gap is well presented by Varshni's relation: $E_g(T)=E_g(0)-({\alpha}T^2/T+{\beta})$. The constants of Varshni's equation had the values of $E_g(0)=3.5269eV$, ${\alpha}=2.03{\times}10^{-3}eV/K$ and ${\beta}=501.9K$ for the $ZnAl_2Se_4$ single-crystal thin film. The crystal field and the spin-orbit splitting energies for the valence band of the $ZnAl_2Se_4$ were estimated to be 109.5 meV and 124.6 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $ZnAl_2Se_4/GaAs$ epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_1$-, $B_1$-exciton for n = 1 and $C_{21}$-exciton peaks for n = 21.

• Journal of the Korean Magnetics Society
• /
• v.17 no.1
• /
• pp.38-42
• /
• 2007

The crystallographic and magnetic properties of $KFeO_2$ powder prepared by ball-mill method, have been studied by x-ray diffraction(XRD), $M\"{o}ssbauer$ spectroscopy, and vibrating sample magnetometer(VSM) measurements. The crystal structure of $KFeO_2$ powder at room temperature is determined to be an orthorhombic structure of Pbca with its lattice constants $a_0=5.557{\AA},\;b_0=11.227{\AA},\;c_0=15.890{\AA}$ by Rietveld refinement. $M\"{o}ssbauer$ spectra of $KFeO_2$ were taken at various temperatures ranging from 4.2 to 818 K. The magnetic hyperfine field and isomer shift value at 4.2 K and RT were 519 kOe, 489 kOe and 0.19 mm/s, 0.05 mm/s respectively. The average hyperfine field $H_{hf}(T)$ of the $KFeO_2$ shows a temperature dependence of $[H_{hf}(T)-H_{hf}(0)]/H_{hf}(0)=-0.36(T/T_N)^{5/2}$ for $T/T_N$<0.7, indicative of spin-wave excitation.

• Journal of the Microelectronics and Packaging Society
• /
• v.12 no.2 s.35
• /
• pp.155-159
• /
• 2005

In this report, Polymer light emitting diodes (PLEDs) with an ITO/PEDOT:PSS/MEH-PPV/Al structure were prepared by spin coating method on the glass substrate patterned ITO (indium tin oxide), using PEDOT:PSS(poly(3,4=ethylenedioxythiophene):poly(styrene sulfolnate)) as the hole transfer material and MEH-PPV(poly(2-methoxy-5-(2-ethyhexoxy)-1,4-phenylenvinylene)) having a different concentration (0.1, 0.3, 0.5, 0.7, 0.9, 1.5 wt$\%$) as the emitting material. The electrical and optical properties of the prepared PLED samples were investigated. The good electrical and optical properties were observed for the PLED samples with a MEH-PPV concentration ranging from 0.5 to $0.9 wt\%$. However, the current and luminance values for PLED sample with $1.5 wt\%$ of MEH-PPV decreased greatly. The maximum luminance and light efficiency for the PLEDs with concentration of $0.5 wt\%$ MEH-PPV were $409 cd/m^2$ and 4.90 Im/W at 9 V, respectively. The emission spectrums were found to be $560{\~}585 nm$ in wavelength showing orange color.

• Journal of Magnetics
• /
• v.15 no.4
• /
• pp.159-164
• /
• 2010

The Zn, Co and Ni substituted manganese ferrite powders, $Mn_{1-x}$(Zn, Co, Ni)$_xFe_2O_4$, were fabricated by the solgel method, and their crystallographic and magnetic properties were studied. The Zn substituted manganese ferrite, $Zn_{0.2}Mn_{0.8}Fe_2O_4$, had a single spinel structure above $400^{\circ}C$, and the size of the particles of the ferrite powder increased when the annealing temperature was increased. Above $500^{\circ}C$, all the $Mn_{1-x}$(Zn, Co, Ni)$_xFe_2O_4$ ferrite had a single spinel structure and the lattice constants decreased with an increasing substitution of Zn, Co, and Ni in $Mn_{1-x}$(Zn, Co, Ni)$_xFe_2O_4$. The Mossbauer spectra of $Mn_{1-x}Zn_xFe_2O_4$ (0.0$\leq$x$\leq$0.4) could be fitted as the superposition of two Zeeman sextets due to the tetrahedral and octahedral sites of the $Fe^{3+}$ ions. For x = 0.6 and 0.8 they showed two Zeeman sextets and a single quadrupole doublet, which indicated they were ferrimagnetic and paramagnetic. And for x = 1.0 spectrum showed a doublet due to a paramagnetic phase. For the Co and Ni substituted manganese ferrite powders, all the Mossbauer spectra could be fitted as the superposition of two Zeeman sextets due to the tetrahedral and octahedral sites of the $Fe^{3+}$ ions. The variation of the Mossbauer parameters are also discussed with substituted Zn, Co and Ni ions. The increment of the saturation magnetization up to x = 0.6 in $Mn_{1-x}Co_xFe_2O_4$ could be qualitatively explained using the site distribution and the spin magnetic moment of substituted ions. The saturation magnetization and coercivity of the $Mn_{1-x}$(Zn, Co, Ni)$_xFe_2O_4$ (x = 0.4) ferrite powders were also compared with pure $MnFe_2O_4$.