• 제목/요약/키워드: spin-structure

검색결과 727건 처리시간 0.022초

A First-principles Study on Magnetism of Al Impurity in bcc Fe

  • Rahman, Gul;Kim, In-Gee
    • Journal of Magnetics
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    • 제16권1호
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    • pp.1-5
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    • 2011
  • The magnetism and electronic structure of bcc $Al_1Fe_{26}$ was investigated by means of first-principles calculations with and without spin-orbit coupling (SOC). From the calculated total energy, the SOC corrected system is shown to be approximately 5 meV per atom lower than the SOC uncorrected system. The induced spin magnetic moment at the Al site was -0.125 ${\mu}_B$ without SOC and -0.124 ${\mu}_B$ with SOC. The orbital magnetic moments were calculated to be 0.002 ${\mu}_B$ in [$\overline{1}$00] direction for Al. The electronic structures showed the nearest neighbor antiferromagnetic interaction between Fe and Al to be essential for determining the magnetism of the $Al_1Fe_{26}$ system.

Correlation between Structures and Magnetism in Iron: Ferromagnetism and Antiferromagnetism

  • Lee, Dong-Kook;Hong, Soon-Cheol
    • Journal of Magnetics
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    • 제12권2호
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    • pp.68-71
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    • 2007
  • Even a pure bulk Fe has a complicated magnetic phase and its magnetism is still needed to be clarified. In this study we investigated the magnetism of bcc and fcc bulk Fe with total energy calculations as functions of atomic volume. The full-potential linearized augmented plane wave method was adopted within a generalized gradient approximation. The ground state of bulk Fe is confirmed to be of ferromagnetic (FM) bcc. For fcc structured Fe an antiferromagnetic (AFM) state is more stable compared to FM states which exist as low spin and high spin states. The stable AFM states were found to accompany a tetragonal distortion, while the FM states remained in a cubic symmetry. At an expanded lattice constant a high spin FM state was calculated to be able to be stabilized with significant enhanced magnetic moment compared to the value of the ground state, bcc FM.

스핀 스프레이법으로 PC 기판에 제작한 산화아연 박막의 특성 (Property of Spin-sprayed ZnO Film on PC Substrate)

  • 홍정수;;;박용서;김경환
    • 반도체디스플레이기술학회지
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    • 제17권3호
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    • pp.27-30
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    • 2018
  • In this study, ZnO film was deposited on polycarbonate substrate by spin-spray method at low substrate temperature of $85^{\circ}C$. Surface morphology of ZnO films was changed by adding citrate from rod to dense structure. As-deposited ZnO film indicated high transmittance above 80%. In case of the resistivity, as-deposited ZnO film had high resistivity due to the existence of organic substance in the film. However, organic substance was removed and resistivity was decreased to $3.9{\times}10^{-2}{\Omega}{\cdot}cm$, after UV irradiation.

Mn이 첨가된 LiNbO3의 초 미세구조 효과 연구 (Investigation of the Hyperfine Structure Effect in a Mn-Doped LiNbO3)

  • 이행기;장현철;박정일
    • 한국진공학회지
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    • 제21권3호
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    • pp.171-177
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    • 2012
  • 본 연구에서는 Mn을 첨가시킨 $LiNbO_3$ 단 결정을 기술하는 스핀 해밀토니언으로 계의 고유치를 구하고, 이를 이용하여 자기 감수성을 온도 의존성으로 조사하였다. 선형응답이론에 기초한 Argyres-Sigel의 투영연산자 방법을 이용하여 계의 자체 에너지함수를 유효한 항까지 계산하였다. 초 미세구조 효과를 고려한 온도 의존성의 역 자기 감수성은 온도의 증가에 따라 그 효과가 더욱 크게 나타나는 것으로 조사되었다. 자체에너지 함수의 실수 부분인 선 너비는 온도의 증가에 따라 감소하는데 이는 온도의 증가로 인해 $Nb^{5+}$$Li^+$ 이온들이 산소 층과 다른 인접한 산소 층 쪽으로 이동하기 때문인 것으로 보인다.

고성능 $I^2L$을 위한 새로운 제작공정 (A New Process for a High Performance $I^2L$)

  • 한철희;김충기;서광석
    • 대한전자공학회논문지
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    • 제18권1호
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    • pp.51-56
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    • 1981
  • 양호한 특성의 I2L 구조를 구현하기 위한 새로운 공정을 제안하였다. 이 구조에서는, extrinsic base 의 불순물 농도가 높으며, 또한 collector는 불순물 농도가 낮은 intrinsic base와 self align된다. 제안한 공정에서는 spin-on source를 확산원으로 사용하였고, mask 단계를 줄이기 위하여 열처리로 단단해진 spin-on source를 확산 mask로 사용하였다. 이 공정에 의하여 13단 ring oscil-lator를 포함한 시험소자를 6.5μm의 epi 충을 갖는 n/n+ silicon wafer 상에 제작하였다. 제작한 시험소자의 특성은, collector가 세 개인 I2L의 경우 npn transistor의 상향 전류이득은 최대치가 8이었으며, collector가 하나인 I2L의 속도전력적과 최소 전달 지연시간은 각각3.5 pJ과 50ns 이었다.

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Co-ferrite 박막에서 양이온 거동에 관한 Mössbauer 분광 연구 (Mossbauer Study for the Cation Distribution of Co-ferrite (CoxFe1-xO4) Thin Films)

  • 박재윤;박영란;김희경;김광주
    • 한국자기학회지
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    • 제16권1호
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    • pp.1-5
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    • 2006
  • 결정구조는 같은 spinel 구조이나, 자기적으로는 각각 반강자성과 준강자성 특성을 띠고 있는 $Co_3O_4$와 자철광 $Fe_3O_4$의 혼성 Co-ferrite인 $Co_xFe_{1-x}O_4$ 박막을 sol-gel법으로 제조하여, Fe 이온에 대한 Co 이온 치환으로 발생된 양이온 거동이 Co-ferrite 박막의 결정구조 및 자기적 특성에 미치는 효과를 XRB 실험, VSM 측정, 그리고 Conversion Electron Mossbauer Spectroscopy (CEMS) 실험으로 조사하였다. 그 결과 $Co^{3+}$ 이온이 주로 $Fe^{3+}$ 이온을 치환하여 단위정의 크기가 감소를 가져오며, 결정구조는 inverse spinel 구조에서 normal spinel 구조로 변환된다. CEMS 분광실험을 통하여 확인된 Fe 이온의 site preference는 주로 $Fe^{3+}$ 이온이 $Co^{3+}$ 치환됨을 보여주고 있으며, 동시에 B-site의 $Co^{2+}$ 이온은 A-site로 이동된다. 자화곡선 측정결과 Co 조성값의 증가로 자기 moment값이 감소되는 것으로 나타났는데, 이것은 low spin상태의 $Co^{3+}$이 high spin상태의 $Fe^{3+}$이온을 치환하여 주로 발생한 것이다.

m-Phenylene-Linked Bis-(Biradicals). Generation, Characterization and Computational Studies

  • Nicolaides, Athanassios;Tomioka, Hideo
    • Journal of Photoscience
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    • 제10권1호
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    • pp.165-173
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    • 2003
  • m-Phenylene-linked biscarbenes, bisnitrenes and carbenonitrenes can be formed photochemically from appropriate nitrogenous precursors. Generation of such reactive intermediates under matrix-isolation conditions allows for their characterization by spectroscopic techniques such as ESR, UV /vis and IR. The latter method is also useful in characterizing secondary products derived from these reactive intermediates. Computational chemistry methods complement experimental IR data, aiding, thus, in identification of such compounds. In addition electronic structure calculations help in developing qualitative and semi-quantitative models, which can be useful in predicting ground-state multiplicities. The parent systems of m-phenylene-linked carbenes and nitrenes have high-spin ground states, but a switching to lower multiplicity can be achieved by chemical substitution. The ground state and various low-lying excited states of m-phenylenecarbenonitrenes can be reasonably approximated by simple valence-bond depictions. Finally, m-phenylenecarbenonitrenes are photoreactive in the inert matrix isomerizing to cyclopropene derivatives.

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Electron Spin Transition Line-width of Mn-doped Wurtzite GaN Film for the Quantum Limit

  • Park, Jung-Il;Lee, Hyeong-Rag;Lee, Su-Ho;Hyun, Dong-Geul
    • Journal of Magnetics
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    • 제17권1호
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    • pp.13-18
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    • 2012
  • Starting with Kubo's formula and using the projection operator technique introduced by Kawabata, EPR lineprofile function for a $Mn^{2+}$-doped wurtzite structure GaN semiconductor was derived as a function of temperature at a frequency of 9.49 GHz (X-band) in the presence of external electromagnetic field. The line-width is barely affected in the low-temperature region because there is no correlation between the resonance fields and the distribution function. At higher temperature the line-width increases with increasing temperature due to the interaction of electrons with acoustic phonons. Thus, the present technique is considered to be more convenient to explain the resonant system as in the case of other optical transition systems.

Surface structure of MBE-Grown $\alpha$-$Fe_2O_3$(0001) by Intermediate-Energy X-ray Photoelectron Diffraction

  • 김용주
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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    • pp.177-177
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    • 1999
  • The surface structure of epitaxial $\alpha$-Fe2O3(0001) grown on $\alpha$-Al2O3(0001) has been investigated using intermediate-energy x-ray photoelectron diffraction. Comparison of experiment with quantum mechanical scattering theory reveals that the surface is Fe-terminated, and that the first four layer spacings are -41%, +18%, -8%, and +47% of the associated bulk values, respectively. these results agree reasonably well with the predictions of molecular mechanics and spin-density functional theory previously reported in the literature for the Fe-terminated surface. however, we find no evidence for and O-terminated surface predicted to be stable by spin-density functional theory.

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블록 공중합체를 이용한 CoCrPt 나노점 배열의 자기적 성질 연구 (SPIN REORIENTATION TRANSIT10N OF ULTRATHIN Co FILMS ON ARTIFICIALLY ROUGHENED Pd(111) SINGLE CRYSTAL)

  • Jeong, Jong-Ryul;Park, Yong-Sung;Kim, Jong-Hyun;Lee, Jeong-Won;Shin, Sung-Chul
    • 한국자기학회:학술대회 개요집
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    • 한국자기학회 2002년도 동계연구발표회 논문개요집
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    • pp.78-79
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    • 2002
  • It is well known that surface and interface roughnesses greatly affect the magnetic properties such as magnetic domain structure, magnetization reversal, magnetoresistance, and spin reorientation transition (SRT) of ultrathin magnetic films. Therefore, recent studies focus on artificially roughened surface, since it could be possible to systematically understand the effect of roughness on the magnetic properties as well as to obtain the desirable magnetic properties by artificially creating the surface structure and morphology. (omitted)

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