• Title/Summary/Keyword: spin valve device

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Effects of Rapid Thermal Annealing on Thermal Stability of FeMn Spin Valve Sensors

  • Park, Seung-Young;Choi, Yeon-Bong;Jo, Soon-Chul
    • Journal of Magnetics
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    • v.10 no.2
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    • pp.52-57
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    • 2005
  • In this research, magnetoresistance (MR) ratio (MR), resistivity, and exchange coupling field $(H_{ex})$ behaviors for sputter deposited spin valves with FeMn antiferromagnetic layer have been extensively investigated by rapid thermal annealing (RTA) as well as conventional annealing (CA) method. 10 s of RTA revealed that interdiffusion was not significant up to $325^{\circ}C$ at the interfaces between the layers when the RTA time was short. The MR of FeMn spin valves were reduced when the spin valves were exposed to temperature of $250^{\circ}C$, even for a short time period of 10 s prior to CA. $H_{ex}$ was maintained up to $325^{\circ}C$ of CA when the specimen was subjected to 10 s of RTA at $200^{\circ}C$ prior to CA, which is $25^{\circ}C$ higher than the result obtained from the CA without prior RTA. Therefore, the stability of $H_{ex}$ could be enhanced by a prior RTA before performing CA up to annealing temperature of $325^{\circ}C$. MR and sensitivity of the specimens annealed without magnetic field up to $275^{\circ}C$ were recovered to the values prior to CA, but $H_{ex}$ was not recovered. This means that reduced MR sensitivity and MR during the device fabrication can be recovered by a field RTA.

Magnetic Sensitivity Depending on Width of IrMn Spin Valve Film Device (IrMn 스핀밸브 박막소자의 폭 크기에 의존하는 자장감응도)

  • Choi, Jong-Gu;Lee, Sang-Suk
    • Journal of the Korean Magnetics Society
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    • v.20 no.2
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    • pp.41-44
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    • 2010
  • The Cu thickness dependence of magnetic sensitivity for the NiFe/Cu/NiFe/IrMn spin valve multilayer was investigated. The magnetic properties measured by minor MR curves for the Ta(5 nm)/NiFe(8 nm)/Cu(3.5 nm)/NiFe(4 nm)/IrMn(8 nm)/Ta(2.5 nm) multilayer is MR = 1.46 %, MS = 2.0 %/Oe, $H_c\;=\;2.6\;Oe$, and $H_{int}\;=\;0.1\;Oe$. The magnetic sensitivities of GMR-SV devices with ten different widths and a same length of $4.45\;{\mu}m$ by fabricated by photo lithography decreased from 0.3 %/Oe to 0.06%/Oe as from a width of $10\;{\mu}m$ to $1\;{\mu}m$.

The Fabrication and Magnetoresistance of Nanometer-sized Spin Device Driven by Current Perpendicular to the Plane (수직전류 인가형 나노 스핀소자의 제조 및 자기저항 특성)

  • Chun, M.G.;Lee, H.J.;Jeung, W.Y.;Kim, K.Y.;Kim, C.G.
    • Journal of the Korean Magnetics Society
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    • v.15 no.2
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    • pp.61-66
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    • 2005
  • In order to make submicron cell for spin-injection device, lift-off method using Pt stencil and wet etching was chosen. This approach allows batch fabrication of stencil substrate with electron-beam lithography. It simplifies the process between magnetic film stack deposition and final device testing, thus enabling rapid turnaround in sample fabrication. Submicron junctions with size of $200nm{\times}300nm$ and $500nm{\times}500nm$ 500 nm and pseudo spin valve structure of $CoFe(30{\AA})/Cu(100{\AA})/CoFe(120{\AA}$) was deposited into the nanojunctions. MR ratio was 0.8 and $1.1{\%}$, respectively and spin transfer effect was confirmed with critical current of $7.65{\times}10^7A/cm^2$.

Investigation on the Free Layer Switching behavior of a Spin-valve MTJ Device with 2 Dimensional Magnetic Field (2차원 자기장에 의한 spin-valve 터널링 자기저항 소자의 자유층 반전 거동에 관한 연구)

  • Lee, Young-Woo;Kim, Cheol-Gi;Kim, Chong-Oh
    • Korean Journal of Materials Research
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    • v.13 no.6
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    • pp.394-397
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    • 2003
  • MTJ devices are fabricated using metal shadow masks and switching characteristics are investigated under 2 dimensional magnetic field. When the hard axis field is less than $\pm$ 16 Oe, switching behavior is similar to that based on the Stoner-Wohlfarth model. As the hard axis field is larger than $\pm$ 16 Oe, deviation from the expectation by Stoner-Wohlfarth model is observed. These phenomena are induced by the generation of multi-domain and inhomogeneous magnetization reversal.

Detection Property of Red Blood Cell-Magnetic Beads Using Micro Coil-Channeland GMR-SV Device (마이크로 코일-채널과 GMR-SV 소자를 이용한 적혈구-자성비드 검출 특성연구)

  • Park, Ji-Soo;Kim, Nu-Ri;Jung, Hyun-Jun;Lee, Sang-Suk
    • Journal of the Korean Magnetics Society
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    • v.25 no.1
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    • pp.16-21
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    • 2015
  • The micro device, coil, and channel for the biosensor integrated with the GMR-SV device based on the antiferromagnetic IrMn layer was fabricated by the light lithography process. When RBCs coupled with several magnetic beads with a diameter of $1{\mu}m$ passed on the micro channel, the movement of $RBC+{\mu}Beads$ is controlled by the electrical AC input signal. The $RBC+{\mu}Beads$ having a micro-magnetic field captured above the GMR-SV device is changed as the output signals for detection status. From these results, the GMR-SV device having the width magnitude of a few micron size can be applied as the biosensor for the analysis of a new magnetic property as the membrane's deformation of RBC coupled to magnetic beads.