DOI QR코드

DOI QR Code

Investigation on the Free Layer Switching behavior of a Spin-valve MTJ Device with 2 Dimensional Magnetic Field

2차원 자기장에 의한 spin-valve 터널링 자기저항 소자의 자유층 반전 거동에 관한 연구

  • Lee, Young-Woo (Division of Materials Engineering, Chungnam National University) ;
  • Kim, Cheol-Gi (Division of Materials Engineering, Chungnam National University) ;
  • Kim, Chong-Oh (Division of Materials Engineering, Chungnam National University)
  • Published : 2003.06.01

Abstract

MTJ devices are fabricated using metal shadow masks and switching characteristics are investigated under 2 dimensional magnetic field. When the hard axis field is less than $\pm$ 16 Oe, switching behavior is similar to that based on the Stoner-Wohlfarth model. As the hard axis field is larger than $\pm$ 16 Oe, deviation from the expectation by Stoner-Wohlfarth model is observed. These phenomena are induced by the generation of multi-domain and inhomogeneous magnetization reversal.

Keywords

References

  1. B. Dieny, V.S. Speriosu, S.S.P. Parkin, B.A. Gumey, D.R. Wilhoit, and D. Mauri, Phys. Rev. B 43, 1297 (1991) https://doi.org/10.1103/PhysRevB.43.1297
  2. J.C.S. Kools, IEEE Trans. Magn. 32, 3165 (1996) https://doi.org/10.1109/20.508381
  3. J.A. Brug, T.C. Anthony, and J.H. Nickel, MRS Bull. 1996, 23
  4. D.D. Tang, P.K. Wang, V.S. Speriosu, S. Le, and K.K.K. Kung, IEEE Trans. Magn. 31, 3206 (1995) https://doi.org/10.1109/20.490329
  5. Jagadeesh S. Moodera, George Mathon, J. Magn. Magn. Mater., 200, 248 (1999) https://doi.org/10.1016/S0304-8853(99)00515-6
  6. T. Miyazaki, N. Tezuka, J. Magn. Magn. Mater., 139, L231 (1995) https://doi.org/10.1016/0304-8853(95)90001-2
  7. W.J. Gallagher, S.S.P. Parkin, Yu Lu, X.P, Bian, A. Marley, K.P. Roche, R.A. Altman, S.A. Rishton, C.Jahness, T.M. Shaw, and Gang Xiao, J. Appl. Phys. 81(8), 3741 (1997) https://doi.org/10.1063/1.364744
  8. Y.M. Lee, O. Song, Kor. J. of Mater. Res. 11(10), 900 (2001)
  9. E.C. Stoner and E. P. Wohlfarth, Philos. Trans. R. Soc. London, Ser. A 240, 599 (1948)
  10. C. Tsang and S.K. Decker, J. Appl. Phys. 53, 2602 (1982) https://doi.org/10.1063/1.330874