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http://dx.doi.org/10.3740/MRSK.2003.13.6.394

Investigation on the Free Layer Switching behavior of a Spin-valve MTJ Device with 2 Dimensional Magnetic Field  

Lee, Young-Woo (Division of Materials Engineering, Chungnam National University)
Kim, Cheol-Gi (Division of Materials Engineering, Chungnam National University)
Kim, Chong-Oh (Division of Materials Engineering, Chungnam National University)
Publication Information
Korean Journal of Materials Research / v.13, no.6, 2003 , pp. 394-397 More about this Journal
Abstract
MTJ devices are fabricated using metal shadow masks and switching characteristics are investigated under 2 dimensional magnetic field. When the hard axis field is less than $\pm$ 16 Oe, switching behavior is similar to that based on the Stoner-Wohlfarth model. As the hard axis field is larger than $\pm$ 16 Oe, deviation from the expectation by Stoner-Wohlfarth model is observed. These phenomena are induced by the generation of multi-domain and inhomogeneous magnetization reversal.
Keywords
Free layer switching; MTJ; Permalloy; stray field;
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