• 대한화학회지
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• 제39권4호
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• pp.237-243
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• 1995

Anthraquinone이 유기용매에서 광반으에 의하여 반응 중간체로 생성하는 짧은 수명의 중성 세미퀴논 라디칼과 음이온 라디칼을 시간분해 ESR법에 의하여 측정하였다. 2-2-propanol (PrOH)과 triethylamine (TEA) 10:1 혼합 용매에서 광반응에 의하여 생성하는 중성 anthrasemiquinone 라디칼(AQH${\cdot}$)과 음이온 라디칼 (AQH${\cdot}$)의 CIDEP 스펙트럼을 측정하였다. 생성한 AQH${\cdot}$은 반감기가 0.8 ${\mu}sec$로 수명이 아주 짧았으며, AQ${\cdot}$-은 안정하여 cwESR의 측정이 가능하였다. 스핀분극된 음이온 라디칼(AQ${\cdot}$-*)의 분극소멸 속도 상수는 $2.6{\times}10^5\; sec^{-1}$이고, 음이온 라디칼의 소멸은 1차 반응으로 속도상수가 $3.0{\times}10^2\; sec^{-1}$이다. 혼합용매에 TEA가 2% 미만일 때 CIDEP가 일어나지 않았다. 벤젠과 TEA 혼합용매에서는 반감기 3.0 ${\mu}sec$의 중성 anthrasemiquinone 라디칼의 CIDEP가 측정되었다. 그러나, cwESR은 측정되지 않았다. PrOH, TEA 또는 벤젠만의 용매로서는 CIDEP와 ESR을 측정할 수 없었다.

• 한국자기학회지
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• 제21권4호
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• pp.127-131
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• 2011

암염구조를 가진 SiTe에서 일부 Si를 Cr로 치환한 화합물에 대한 전자구조와 자성을 교환상관퍼텔셜에 일반기울기 근사를 쓴 full potential linearized augmented plane wave 에너지 띠 계산방법을 이용하여 연구하였다. Si 대신 25 %의 Cr을 치환한 $CrSi_3Te_4$ 및 50 %를 치환한 $CrSiTe_2$를 고려하였다. 총에너지 계산으로 $CrSi_3Te_4$는 11.64 a.u, $CrSiTe_2$는 a = 7.89 a.u., c = 11.13 a.u.의 평형격자상수를 가짐을 알았다. $CrSiTe_2$는 단위부피당 정수인 $4{\mu}_B$의 자기모멘트를 가지는 반쪽금속성을 나타냈으며, $CrSi_3Te_4$는 단위부피당 자기모멘트가 $4{\mu}_B$보다 미세하게 컸다. 두 화합물 모두에서 치환되어 들어간 Cr은 $3.6{\mu}_B$ 정도의 자기모멘트를 가졌으며, Si나 Te는 약하게 자기화되었다. 계산된 스핀분극 상태밀도를 이용하여 이 두 화합물의 자성을 논의하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.242-242
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• 2016

Magnetite, Fe3O4, is a ferrimagnet with a cubic inverse spinel structure and exhibits a metal-insulator, Verwey, transition at about 120 K.[1] It is predicted to possess as half-metallic nature, 100% spin polarization, and high Curie temperature (850 K). Cobalt ferrite is one of the most important members of the ferrite family, which is characterized by its high coercivity, moderate magnetization and very high magnetocrystalline anisotropy. It has been reported that the CoFe2O4/Fe3O4 bilayers represent an unusual exchange-coupled system whose properties are due to the nature of the oxide-oxide super-exchange interactions at the interface [2]. In order to evaluate the effect of interface interactions on magnetic and transport properties of ferrite and cobalt ferrite, the CoFe2O4/Fe3O4 superlattices on MgO (100) substrate have been fabricated by molecular beam epitaxy (MBE) with the wave lengths of 50, and $200{\AA}$, called $25{\AA}/25{\AA}$ and $100{\AA}/100{\AA}$, respectively. Streaky RHEED patterns in sample $25{\AA}/25{\AA}$ indicate a very smooth surface and interface between layers. HR-TEM image show the good crystalline of sample $25{\AA}/25{\AA}$. Interestingly, magnetization curves showed a strong antiferromagnetic order, which was formed at the interfaces.

• Transactions on Electrical and Electronic Materials
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• 제12권5호
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• pp.193-196
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• 2011

Lead zirconate titanate (PZT)/ bismuth ferrite (BFO) multilayer thin films have been fabricated by the spin-coating method on Pt(200 nm)/Ti(10 nm)/$SiO_2$(100 nm)/p-Si(100) substrates using $BiFeO_3$ and $Pb(Zr_{0.52}Ti_{0.48})O_3$ metal alkoxide solutions. The PZT/BFO multilayer thin films show a uniform and void-free grain structure, and the grain size is smaller than that of PZT single films. The reason for this is assumed to be that the lower BFO layers play an important role as a nucleation site or seed layer for the formation of homogeneous and uniform upper PZT layers. The dielectric constant and dielectric losses decreased with increasing number of coatings, and the six-layer PZT/BFO thin film has good properties of 162 (dielectric constant) and 0.017 (dielectric losses) at 1 kHz. The remnant polarization and coercive field of three-layer PZT/BFO thin films were 13.86 ${\mu}C/cm^2$ and 37 kV/cm respectively.

• 한국세라믹학회지
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• 제40권12호
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• pp.1189-1196
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• 2003

Sol-gel법으로 강유전성 B $i_{3.25}$L $a_{0.75}$ $Ti_3$ $O_{12}$ (BLT) stock solution을 합성하고 Pt/Ti $O_2$/ $SiO_2$/Si 기판위에 스핀코팅법으로 BLT 박막을 증착하였다. 본 실험에서는 Bi(TMHD)$_3$, La(III)2-Methoxyethoxide, Ti(IV)i-propoxide를 출발물질로 사용하였으며 2-Methoxyethanol을 용매로 사용하였다. 급속열처리(RTA)가 BLT 박막의 결정성장을 촉진시키기 위해 사용되었고, RTA를 실시한 시편과 RTA를 실시하지 않은 시편의 전기적 특성을 비교하였다. RTA를 실시한 후 72$0^{\circ}C$에서 로 열처리 한 BLT 박막의 경우 5V 인가 전압 하에서 2Pr 값은 RTA를 실시하지 않은 경우보다 27% 증가한 20.46$\mu$C/$ extrm{cm}^2$이었다.

• 한국전기전자재료학회논문지
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• 제13권4호
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• pp.312-317
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• 2000

Ferroelectric S $r_{0.9}$/B $i_{2.1}$/T $a_{2}$/ $O_{9}$ solutions were synthesized using sol-gel process in which strontinum ethoxide bismuth ethoxide trantalum ethoxide were used a s startring materials. SBT thin films were coated on Pt/Ti/ $SiO_2$/Si substrates by spin-coating. rapid thermal annealing (RTA) was used to promote crystallization. Thin films were annealed at $700^{\circ}C$ for 1 hr in an oxygen atmosphere. This temperature is about 10$0^{\circ}C$ lower than the usual annealing temperature for SBT thin films. Pt top-electrode was deposited by sputtering and thin films were post-annealed at $700^{\circ}C$ for 30 min. to enhance electrical properties. As the RTA temperature increased the higher 2 $P_{r}$ values were obtained. At RTA temperature being 78$0^{\circ}C$ remanent polarization of S $r_{0.9}$/B $i_{2.1}$/T $a_{2}$/ $O_{9}$ thin film was 7.73 $\mu$C/cm $_2$ and the leakage current density was 1.14$\times$10$^{-7}$ A/c $m^2$ at 3 V. As RTA temperature increased the breakdown voltage was decreased. It is considered that the low-field breadown is caused by the rough surface of SBT films and forming bismuth metal in SBT thin films.films.lms.

• Bulletin of the Korean Chemical Society
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• 제18권12호
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• pp.1274-1280
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• 1997

The photodissociation dynamics of CH2I2 has been studied at 304 nm by state-selective photofragment translational spectroscopy. Velocity distributions, anisotropy parameters, and relative quantum yields are obtained for the ground I(2P3/2) and spin-orbit excited state I*(2P1/2) iodine atoms, which are produced from photodissociation of CH2I2 at this wavelength. These processes are found to occur via B1 ← A1 type electronic transitions. The quantum yield of I*(2P1/2) is determined to be 0.25, indicating that the formation of ground state iodine is clearly the favored dissociation channel in the 304 nm wavelength region. From the angular distribution of dissociation products, the anisotropy parameters are determined to be β(I)=0.4 for the I(2P3/2) and β(I*)=0.55 for the I*(2P1/2) which substantially differ from the limiting value of 1.13. The positive values of anisotropy parameter, however, show that the primary processes for I and I* formation channels proceed dominantly via a transition which is parallel to I-I axis. The above results are interpreted in terms of dual path formation of iodine atoms from two different excited states, i.e., a direct and an indirect dissociation via curve crossing between these states. The translational energy distributions of recoil fragments reveal that a large fraction of the available energy goes into the internal excitation of the CH2I photofragment; < Eint > /Eavl=0.80 and 0.82 for the I and I* formation channels, respectively. The quantitative analysis for the energy partitioning of available energy into the photofragments is used to compare the experimental results with the prediction of direct impulsive model for photodissociation dynamics.

• Current Applied Physics
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• 제18권11호
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• pp.1338-1344
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• 2018

Band parameters and superconductivity of yttrium hypocarbide ($Y_2C$) have been investigated. The computations are performed using first-principles pseudopotential method within a generalized gradient approximation. The equilibrium lattice parameters have been determined and compared with experiment. Moreover, the material of interest is found to be stiffer for strains along the a-axis than those along the c-axis. A band-structure analysis of $Y_2C$ implied that the latter has a metallic character. The examination of Eliashberg Spectral Function indicates that Y-related phonon modes as well as C-related phonon modes are considerably involved in the progress of scattering of electrons. By integrating this function, the value of the average electron-phonon coupling parameter (${\lambda}$) is found to be 0.362 suggesting thus that $Y_2C$ is a weak coupling Bardeen-Copper-Schrieffer superconductor. The use of a reasonable value for the effective Coulomb repulsion parameter (${\mu}^*=0.10$) yielded a superconducting critical temperature $T_c$ of 0.59 K which is comparable with a previous theoretical value of 0.33 K. Upon compression (at pressure of 10 GPa) ${\lambda}$ and $T_c$ are increased to be 0.366 and 0.89 K, respectively, showing thus the pressure effect on the superconductivity in $Y_2C$. The spin-polarization calculations showed that the difference in the total energy between the magnetic and non-magnetic $Y_2C$ is weak.

• 유통과학연구
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• 제12권10호
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• pp.75-84
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• 2014

Purpose - This article aims to examine whether the stock issuance of firms in the retail industry follows Myers' (1984) pecking order theory, which is based on information asymmetry. According to the pecking order model, firms have a sequence of financing decisions, of which the first choice is to use retained earnings, the second one is to get into safe debt, the next involves risky debt, and the last involves finance with outside equity. Since the 2000s, the polarization of the LEs (Large enterprises) and SMEs (Small and Medium Enterprises) arose in the retail industry. The LEs exhibited an improvement in growth and profitability, whereas SMEs had a tendency to degenerate. This study contributes to corroborating the features of financing decisions in the retail industry distinguished from the other industries. Research design, data, and methodology - This study considers the stocks listed on the KOSPI and KOSDAQ markets from 1991 to 2013, and is more concentrated on the stocks in the retail industry. The data were collected from the financial information company, WISEfn. The empirical analysis is conducted by employing two measures of net equity issues (and), which were introduced in Fama and French (2005), and can be calculated from firms' accounting information. All variables are generated as the aggregate value of the numerator divided by aggregate assets, which, in effect, treats the entire sample as a single firm. Substantially, the financing decisions of the firms were analyzed by examining how often and under what circumstances firms issue and repurchase equity. Then, this study compares the features of the retail industry with those of the other industries. Results - The proportion of sample firms that show annual net stock issues reaching the level of the year's average was 54.33% for the 1990s, and fell to 39.93% per year for the 2000s. In detail, the fraction of the small firms actually increases from 45.08% to 51.04%, whereas that of large firms shows a dramatic decline from 58.94% to 24.76%. Considering the fact that the large firms' rapid increase in growth after the 2000s may lead to an increase in equity issues, this result is rather surprising. Meanwhile, net stock repurchases of assets are considerably disproportionate between the large (-50.11%) and the small firms (-15.66%) for the 2000s. Conclusions - Stock issuance of retail firms is not in line with the traditional seasoned equity offering based on information asymmetry. The net stock issuance of the small firms in the retail industry can be interpreted as part of an effort to reorganize business and solicit new investment to resolve degenerating business performance. For large firms, on the other hand, the net repurchase can be regarded as part of an effort to rearrange business for efficiency and amplifying synergy across business sections through spin-off. These results can help the government establish a support policy on retail industry according to size.

• 한국전기전자재료학회논문지
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• 제17권1호
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• pp.7-15
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• 2004

The ferroelectric SBT thin films as a material of capacitors for non-volatile FRAMs have some problems that its remanent polarization value is relatively low and the crystallization temperature is quite high abovc 80$0^{\circ}C$. Therefore, in this paper, SBTN solution with S $r_{0.9}$B $i_{2.1}$T $a_{1.8}$N $b_{0.2}$$O_{9}$ composition was synthesized by sol-gel method. Sr(O $C_2$ $H_{5}$)$_2$, Bi(TMHD)$_3$, Ta(O $C_2$ $H_{5}$)$_{5}$and Nb(O $C_2$ $H_{5}$)$_{5}$ were used as precursors, which were dissolved in 2-methoxyethanol. SBTN thin films with 200 nm thickness were deposited on Pt/Ti $O_2$/ $SiO_2$/Si substrates by spin-coating. UV-irradiation in a power of 200 W for 10 min and rapid thermal annealing in a 5-Torr-oxygen ambient at 76$0^{\circ}C$ for 60 sec were used to promote crystallization. The films were well crystallized and fine-grained after annealing at $650^{\circ}C$ in oxygen ambient. The electrical characteristics of 2Pr=11.94 $\mu$C/$\textrm{cm}^2$, Ps＋/Pr＋=0.54 at the applied voltage of 5 V were obtained for a 200-nm-thick SBTN films. This results show that 2Pr values of the UV irradiated and rapid thermal annealed SBTN thin films at the applied voltage of 5 V were about 57% higher than those of no additional processed SBTN thin films. thin films.lms.s.s.