• Journal of the Korea Institute of Information and Communication Engineering
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• v.23 no.6
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• pp.690-696
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• 2019

New companies expecting market penetration by adopting technology commercialization process could face high uncertainty and constraints. In particular, ICT-based firms that enter competitive markets must deal with more complex situations. Although in-depth research has been done to solve the problem, there is still a lack of understanding of how startups' technology commercialization process is successful. To discuss the issue, this paper presents the technology commercialization model and determinants.(policy, finance, work team, organizational culture, overcoming the difficulties etc.) the suitability of the framework. From this analysis it emerged that the sustainability of organizational capabilities is as important as the adherence to the technology commercialization process for companies. As the organizational capacity has decreased, the driving force for technology commercialization has weakened. Therefore, the technology commercialization process does not guarantee the success of the market entry but is understood as a means of market access. If the organizational capacity is not strengthened, there is no successful technology commercialization process.

• Asia-Pacific Journal of Business Venturing and Entrepreneurship
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• v.11 no.5
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• pp.45-56
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• 2016

According to attended about startup, there are many policy and program for activating of startup. Government's policy and program was scale up and arrangements for high quality. Nevertheless, policies and programs are concentrated on ante-startup stage. And experts have questioned that effect. So, there are needed a program focusing pre-startup and incubation stage. Accordingly, this study propose a kind of educative program named Pre-Startup Support Program. Through the program, pre-startup teams or entrepreneurs will inspect items, business skills and surroundings of market and competitors. And they have a time for complementation of deficiency. This study selects ETRI spin-off(research based spin-off born ETRI) by means of an object of study. ETRI's programs are started in 2011 with intent to incubate the entrepreneur through market research, mentoring, space of incubation and funds. This study analyze using the ISA(Important-Satisfaction Analyze) and the regression. We classify the pre-startup support program using the ISA. And then, we analyze the influence of satisfaction using the regression. On the basis of results, we identify the effectiveness of pre-startup support program and propose plans for reinforcement. In conclusion, adopting a pre-startup support program is expected to success of startup.

• Journal of the Korean Magnetics Society
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• v.17 no.2
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• pp.60-64
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• 2007

Ba-Ferrite single crystals were prepared and characterized by X-ray, SEM and Mossbauer spectroscopy. The single crystal layers was cut in the c-axis and radiated to the surface by ${\gamma}-rays$ for Mossbauer spectroscopy. We found out that the spin states in Fe atoms were parallel to the ${\gamma}-rays$ direction. The temperature dependence of the hyperfine field is almost similar to that of powder samples. The crystal structure is a Magnetoplumbite without any other phases and the lattice parameters are found out with $a_0=5.892{\AA},\;b_0=5.892{\AA},\;c_0=23.198{\AA}$. $M\"{o}ssbauer$ spectrum in single crystal have 5 sets off absorption lines in each Fe site when the ${\gamma}-rays$ have the same radiation direction with the c-axis in the crystal, which mean that the whole crystal bulk formed only one crystal and same spin direction. The hysteresis curve shows the saturation moment and coercive force of 70.71 emu/g and 320 Oe respectively.

• Anxiety and mood
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• v.16 no.2
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• pp.98-105
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• 2020

Objective : The purpose of this study was to investigate the prevalence of social anxiety disorder (SAD) and its association with psychosocial factors including self-esteem, ego-resiliency, and social support in a sample of medical students. Methods : A total of 405 medical students were included in this study. Subjects were asked to complete a self-reported questionnaire, measures of the Social Phobia Inventory (SPIN), the Rosenberg's Self-Esteem Scale (RSES), the Ego-Resiliency Scale (ERS), and the Duke-UNC Functional Social Support Questionnaire (DUFSS). The SAD and non-SAD group were defined using the SPIN score of 25 as a cut-off. The multiple regression analyses were performed to examine the association of self-esteem, ego-resiliency, and social support with SAD symptoms. Results : A total of 79 subjects (19.5%) were identified with SAD. The total RSES score, ERS score, and DUFSS score were significantly lower in the SAD group than the non-SAD group. The total SPIN score negatively correlated with the total RSES score (r=-0.481, p<0.001), the ERS score (r=-0.417, p<0.001), and the DUFSS score (r=-0.406, p<0.001). In the multiple regression, SAD symptoms were associated with self-esteem (β=-0.549, p<0.001), ego-resiliency (β=-0.395, p<0.001), and social support (β=-0.346, p<0.001). Conclusion : This study revealed the prevalence of SAD and its negative association with self-esteem, ego-resiliency, and social support among medical students. Our findings indicate that improving self-esteem and ego-resiliency as well as perceived social support may contribute to the management of SAD symptoms among medical students.

• Journal of the Korean Vacuum Society
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• v.17 no.5
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• pp.435-441
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• 2008

In this paper, we investigated the electrical properties of triisopropylsilyl (TIPS) pentacene organic thin-film transistor (OTFT) depending on solvent type. We spin coated TIPS pentacene by using chlorobenzene, p-xylene, chloroform, and toluene as solvents. Fabricated OTFT with chlorobenzene shows field-effect mobility of $1.0{\times}10^{-2}cm^2/V{\cdot}s$, on/off ratio of $4.3{\times}10^3$ and threshold voltage of 5.5 V. In contrast, with chloroform, the mobility is $5.8{\times}10^{-7}cm^2/V{\cdot}s$, on/off ratio of $1.1{\times}10^2$ and threshold voltage of 1.7 V. Moreover we measured the grain size of each TIPS pentacene solvent by atomic force microscopy (AFM). From these results, it can be concluded that a solvent with higher boiling point results in better electrical characteristics due to large grain size and high crystallinity of TIPS pentacene layer. In this paper TIPS pentacene with chlorobenzene shows the best electrical properties.

• Korean Chemical Engineering Research
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• v.49 no.5
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• pp.600-604
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• 2011

Solution processed IGO thin films were prepared using a general chemical solution route by spin coating. The effect of the annealing temperature of IGO thin films based on the ratio of 2:1 of indium to gallium on crystallization was investigated with varying annealing temperature from $300^{\circ}C$ to $600^{\circ}C$. The electronic device characteristic of IGO thin film was investigated. The solution-processed IGO TFTs annealed at 300 and $600^{\circ}C$ in air for 1 h exhibited good electronic performances with field effect mobilities as high as 0.34 and 3.83 $cm^2/V{\cdot}s$, respectively. The on/off ratio of the IGO TFT in this work was $10^5$ with 98% transmittance.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.181.1-181.1
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• 2015

용액 공정을 이용한 Resistive random access memory (ReRAM)은 간단한 공정 과정, 대면적화, 저렴한 가격 등의 장점으로 인해 큰 관심을 받고 있으며, HfOx, TiOx, AlOx 등의 산화물이 ReRAM 절연 막으로 주로 연구되고 있다. 더 나아가 최근에는 organic 물질을 메모리 소자로 사용한 연구가 보고되고 있다. 이는 경제적이며, wearable 또는 flexible system에 적용이 용이하다. 그럼에도 불구하고, organic 물질을 갖는 메모리 소자는 기존의 산화물 소자에 비해 열에 취약하며 전기적인 특성과 신뢰성이 우수하지 못하다는 단점을 가지고 있다. 이를 위한 방안으로 본 연구에서는 AlOx - polymethylmethacrylate (PMMA) blended thin film ReRAM을 제안하였다. 이는 organic물질의 전기적 특성을 개선시킬 뿐 아니라, inorganic 물질을 wearable 소자에 적용했을 때 발생하는 crack과 같은 기계적 물리적 결함을 해결할 수 있는 새로운 방법이다. 먼저, P-type Si 위에 습식산화를 통하여 SiO2 300 nm 성장시킨 기판을 사용하여 electron beam evaporation으로 10 nm의 Ti, 100 nm의 Pt 층을 차례로 증착하였다. 그리고 PMMA 용액과 AlOx 용액을 초음파를 이용하여 혼합한 뒤, 이 용액을 Pt 하부 전극 상에서 spin coating방법으로 1000 rpm 10초, 5000 rpm 30초의 조건으로 증착하였다. Solvent 및 불순물 제거를 위하여 150, 180, $210^{\circ}C$의 온도로 30 분 동안 열처리를 진행하였고, shadow mask를 이용하여 상부 전극인 Ti를 sputtering 방식으로 100 nm 증착하였다. 150, 180, $210^{\circ}C$로 각각 열처리한 AlOx - PMMA blended ReRAM의 전기적 특성은 HP 4156B semiconductor parameter analyzer를 이용하여 측정하였다. 측정 결과 제작된 소자 전부에서 2 V이하의 낮은 동작전압, 안정된 DC endurance (>150cycles), 102 이상의 높은 on/off ratio를 확인하였고, 그 중 $180^{\circ}C$에서 열처리한 ReRAM은 더 높은 on/off ratio를 갖는 것을 확인하였다. 결론적으로 baking 온도를 최적화하였으며 AlOx - PMMA blended film ReRAM의 우수한 메모리 특성을 확인하였다. AlOx-PMMA blended film ReRAM은 organic과 inorganic의 장점을 갖는 wearable 및 system용 비휘발성 메모리소자에 적용이 가능한 경제적인 기술로 판단된다.

• Journal of Sensor Science and Technology
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• v.9 no.3
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• pp.171-176
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• 2000

The physical and electrical characteristics of MgO and Pt thin-films on it, deposited by reactive sputtering and rf magnetron sputtering, respectively, were analyzed with annealing temperature and time by four-point probe, SEM and XRD. Under annealing conditions of $1000^{\circ}C$ and 2 hr, MgO thin-film had the properties of improving Pt adhesion to $SiO_2$ and insulation without chemical reaction to Pt thin-film, and the sheet resistivity and the resistivity of Pt thin-film deposited on it were $0.1288\;{\Omega}/{\square}$ and $12.88\;{\mu}{\Omega}{\cdot}cm$, respectively. We made Pt resistance pattern on $SiO_2$/Si substrate by lift-off method and fabricated thin-film type Pt-RTD(resistance thermometer device) for micro thermal sensors by Pt-wire, Pt-paste and SOG(spin-on-glass). In the temperature range of $25{\sim}400^{\circ}C$, the TCR value of fabricated Pt-RTD with thickness of $1.0{\mu}m$ was $3927\;ppm/^{\circ}C$ close to the Pt bulk value. Resistance values were varied linearly within the range of measurement temperature.

• Journal of Sensor Science and Technology
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• v.6 no.2
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• pp.81-86
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• 1997

Platinum thin films were deposited on $SiO_{2}/Si$ and $Al_{2}O_{3}$ substrates by DC magnetron sputtering for RTD (resistance thermometer devices) temperature sensors. The resistivity and sheet resistivity of these films were decreased with increasing the annealing temperature and time. We made Pt resistance pattern on $Al_{2}O_{3}$ substrate by lift-off method and fabricated Pt-RTD temperature sensors by using W-wire, silver epoxy and SOG(spin-on-glass). In the temperature range of $25{\sim}400^{\circ}C$, we investigated TCR(temperature coefficient of resistance) and resistance ratio of Pt-RTD temperature sensors. TCR values were increased with increasing the annealing temperature, time and the thickness of Pt thin films. Resistance values were varied linearly within the range of measurement temperature. At annealing temperature of $1000^{\circ}C$, time of 240min and thin film thickness of $1{\mu}m$, we obtained TCR value of $3825ppm/^{\circ}C$ close to the Pt bulk value.

• Korean Journal of Materials Research
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• v.19 no.1
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• pp.33-36
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• 2009

Inorganic-organic composite thin-film-transistors (TFTs) of ZnO nanowire/Poly(3-hexylthiophene) (P3HT) were investigated by changing the nanowire densities inside the composites. Crystalline ZnO nanowires were synthesized via an aqueous solution method at a low temperature, and the nanowire densities inside the composites were controlled by changing the ultrasonifiaction time. The channel layers were prepared with composites by spin-coating at 2000 rpm, which was followed by annealing in a vacuum at $100^{\circ}C$ for 10 hours. Au/inorganic-organic composite layer/$SiO_2$ structures were fabricated and the mobility, $I_{on}/I_{off}$ ratio, and threshold voltage were then measured to analyze the electrical characteristics of the channel layer. Compared with a P3HT TFT, the electrical properties of TFT were found to be improved after increasing the nanowire density inside the composites. The mobility of the P3HT TFT was approximately $10^{-4}cm^2/V{\cdot}s$. However, the mobility of the ZnO nanowire/P3HT composite TFT was increased by two orders compared to that of the P3HT TFT. In terms of the $I_{on}/I_{off}$ ratio, the composite device showed a two-fold increase compared to that of the P3HT TFT.