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http://dx.doi.org/10.9713/kcer.2011.49.5.600

A Study on Indium Gallium Oxide Thin Film Transistors prepared by a Solution-based Deposition Method  

Bae, Eunjin (School of Chemical Engineering, Yeungnam University)
Lee, Jin Young (School of Chemical Engineering, Yeungnam University)
Han, Seung-Yeol (School of Chemical, Biological and Environmental Engineering, Oregon State University)
Chang, Chih-Hung (School of Chemical, Biological and Environmental Engineering, Oregon State University)
Ryu, Si Ok (School of Chemical Engineering, Yeungnam University)
Publication Information
Korean Chemical Engineering Research / v.49, no.5, 2011 , pp. 600-604 More about this Journal
Abstract
Solution processed IGO thin films were prepared using a general chemical solution route by spin coating. The effect of the annealing temperature of IGO thin films based on the ratio of 2:1 of indium to gallium on crystallization was investigated with varying annealing temperature from $300^{\circ}C$ to $600^{\circ}C$. The electronic device characteristic of IGO thin film was investigated. The solution-processed IGO TFTs annealed at 300 and $600^{\circ}C$ in air for 1 h exhibited good electronic performances with field effect mobilities as high as 0.34 and 3.83 $cm^2/V{\cdot}s$, respectively. The on/off ratio of the IGO TFT in this work was $10^5$ with 98% transmittance.
Keywords
Transparent Conducting Oxide; IGO; TFT; Semiconductor; Solution-Based Deposition Method;
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