• Title/Summary/Keyword: source resistance

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Design of Low-Power TFT-LCD Source Driver

  • Sung, Yoo-Chang;Choi, Byong-Deok;Kwon, Oh-Kyong
    • 한국정보디스플레이학회:학술대회논문집
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    • 2000.01a
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    • pp.17-18
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    • 2000
  • A low-power source driver for TFT-LCDs has been proposed using the triple charge sharing method that enhances the AC power saving efficiency of the prior charge sharing method. The AC power saving efficiency of the proposed source driver reaches 66.6%. In addition, a novel OP-AMP with low-quiescent current has been developed. The measured quiescent current of the OP-AMP is $5{\mu}A{\sim}7{\mu}A$ at VDD=5V and VSS=0V with load resistance of $2k{\Omega}$ and load capacitance of 300pF.

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Determination of Induction Motor equivalent circuit parameters by Inverter Source (인버터 전원에 의한 유도전동기 등가회로 결정)

  • Jeong, Young-Jun;Jwa, Chong-Keun
    • Proceedings of the KIEE Conference
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    • 2001.04a
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    • pp.160-162
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    • 2001
  • A determining method of the $\Gamma$ type eqivalent circuit parameters of induction motor driven by inverter source is proposed in this paper. The no-load test by rated frequency (60 Hz) and a blocked rotor test by 25% of rated frequency (l5Hz) are performed with inverter source, and the DC resistance of the stator winding is measured. To determine the more accurate parameters, four simultaneous equations obtained from equivalent circuit of the no-load test and blocked rotor test are solved by using initial values which are evaluated from simplified equivalent circuits. The induction motor performances are computed by using these parameters and compared with measured values of the tested motor. Then it is found that the compared results show good agreement between them.

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Evaluation for Warming-up Performance and Fusing Quality through Heat Transfer Simulations of Laser Printer Fusing System (레이저 프린터 정착 시스템의 열전달 해석을 통한 승온 성능 및 정착성 예측)

  • Lee, Jin-sung
    • Proceedings of the KSME Conference
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    • 2008.11b
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    • pp.2231-2235
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    • 2008
  • Thermal performance of fusing system in laser printer is determined by FPOT(First print out time) required and toner fusing quality. FPOT is influenced by the thermal resistance of fusing system between heat source and nip region. Also FPOT is depended by the heat source power and toner fusing temperature. The fusing quality of toner is decided by the temperature, pressure and duration time in nip region. In this study, I have performed thermal analysis for the toner fusing system. Computational simulation has been used to understand the effect of heat source power and printing speed etc. on the temperature distribution of the fusing system. Also in order to predict fusing quality, numerical simulation of the process that paper is continuously supplied to the nip regions were performed. In comparison with the experimental results of the fusing quality vs transferred calory to the toner layer, I could evaluate various fusing condition parameters effected on the thermal performance.

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Simulation-based P-well design for improvement of ESD protection performance of P-type embedded SCR device

  • Seo, Yong-Jin
    • Journal of IKEEE
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    • v.26 no.2
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    • pp.196-204
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    • 2022
  • Electrostatic discharge (ESD) protection devices of P-type embedded silicon-controlled rectifier (PESCR) structure were analyzed for high-voltage operating input/output (I/O) applications. Conventional PESCR standard device exhibits typical SCR characteristics with very low-snapback holding voltages, resulting in latch-up problems during normal operation. However, the modified device with the counter pocket source (CPS) surrounding N+ source region and partially formed P-well (PPW) structures proposed in this study could improve latch-up immunity by indicating high on-resistance and snapback holding voltage.

Resistance of Plants to Herbicide (제초제(除草劑)에 대한 식물(植物)의 저항성(抵抗性))

  • Kim, Kil-Ung
    • Korean Journal of Weed Science
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    • v.4 no.1
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    • pp.96-106
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    • 1984
  • Changes in weed floras and development of plant resistance to herbicides seemed to be closely related with increased and repeated use of herbicides. Herbicide use increased from 5% of the total consumption of pesticide in 1950 to 45% in 1976 in world basis. About 200 herbicides have been introduced to agriculture so as to control about 206 weed species which have been recorded important to human beings. In Korea, there was about 351 times in increased use of herbicides from 1966 to 1982. Interspecific selection by herbicide is mainly responsible for changes in weed floras and resulted in varying tolerance or susceptibility to herbicides, together with the changes of agricultural practices. The present trend toward continuous cereal cultivation throughout world will lead to type of changes in weed floras favorable to therophyte which can survive under unfavorable conditions as seeds rather than the types of geophyte which can survive unfavorable seasons as buds placed below soil surface. However, geophyte such as Sagitaria pygmaea, and Scirpus jurtcoides, and Cyperus rotundus and Cynodon dactylon in temperate warm climate become severe paddy weeds, presumably because of the removal of annual weeds by herbicides. Since differential tolerance to 2,4-D was firstly reported in Agrostis stolofera, about 30 species of weeds in 18 genera are presently known to have developed resistance to triazine herbicides. Resistance of weed biotypes to triazine herbicide is not mainly due to limited absorption and translocation or to the difference in metabolism, but is the result of biochemical changes at the site of metabolic activity, such as a loss of herbicide affinity for triazine binding site in the photosystem II complex of the chloroplast membrane. Genetical study showed that plastid resistance to triazine was wholly inherited through cytoplasmic DNA in the case of Brassica campestris. Plant tissue culture method can be utilized as an alternate mean of herbicide screening and development of resistance variants to herbicides as suggested by Chaleff and Parsons. In this purpose, one should be certain that the primary target process is operational in cell culture. Further, there are a variety of obstacles in doing this type of research, particularly development of resistance source and it's regeneration because cultured cells and whole plants represent different developmental state.

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Identification of Novel Source of Resistance and Differential Response of Allium Genotypes to Purple Blotch Pathogen, Alternaria porri (Ellis) Ciferri

  • Nanda, Satyabrata;Chand, Subodh Kumar;Mandal, Purander;Tripathy, Pradyumna;Joshi, Raj Kumar
    • The Plant Pathology Journal
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    • v.32 no.6
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    • pp.519-527
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    • 2016
  • Purple blotch, caused by Alternaria porri (Ellis) Cifferi, is a serious disease incurring heavy yield losses in the bulb and seed crop of onion and garlic worldwide. There is an immediate need for identification of effective resistance sources for use in host resistance breeding. A total of 43 Allium genotypes were screened for purple blotch resistance under field conditions. Allium cepa accession 'CBT-Ac77' and cultivar 'Arka Kalyan' were observed to be highly resistant. In vitro inoculation of a selected set of genotypes with A. porri, revealed that 7 days after inoculation was suitable to observe the disease severity. In vitro screening of 43 genotypes for resistance to A. porri revealed two resistant lines. An additional 14 genotypes showed consistent moderate resistance in the field as well as in vitro evaluations. Among the related Allium species, A. schoenoprasum and A. roylei showed the least disease index and can be used for interspecific hybridization with cultivated onion. Differential reaction analysis of three A. porri isolates (Apo-Chiplima, Apn-Nasik, Apg-Guntur) in 43 genotypes revealed significant variation among the evaluated Allium species (P = 0.001). All together, the present study suggest that, the newly identified resistance sources can be used as potential donors for ongoing purple blotch resistance breeding program in India.

A Study on Specific Contact Resistance Reduction of Ni Germanide/P-type Ge Using Terbium Interlayer (Terbium 중간층 적용을 통한 Ni Germanide/P-type Ge의 비접촉저항 감소 연구)

  • Shin, Geon-Ho;Li, Meng;Lee, Jeongchan;Song, Hyeong-Sub;Kim, So-Yeong;Lee, Ga-Won;Oh, Jungwoo;Lee, Hi-Deok
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.31 no.1
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    • pp.6-10
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    • 2018
  • Ni germanide (NiGe) is a promising alloy material with small contact resistance at the source/drain (S/D) of Ge MOSFETs. However, it is necessary to reduce the specific contact resistance between NiGe and the doped Ge S/D region in high-performance MOSFETs. In this study, a novel method is proposed to reduce the specific contact resistance between NiGe and p-type Ge (p-Ge) using a Tb interlayer. The specific contact resistance between NiGe and p-Ge was successfully decreased with the introduction of the Tb interlayer. To investigate the mechanism behind the reduction in the specific contact resistance, the elemental distribution and crystalline structure of NiGe were analyzed using secondary ion mass spectroscopy and X-ray diffraction. It is likely that the reduction in specific contact resistance was caused by an increase in the concentration of boron in the space between NiGe and p-Ge due to the influence of the Tb interlayer.

Antimicrobial Resistance Characteristics of Gram-Negative Bacteria Isolated from Inland Pollution Sources in the Drainage Basin of Iwon-myeon (Taean-gun), South Korea (태안군 이원면 육상오염원 배출수에서 분리한 그람음성균의 항생제 내성 특성)

  • Park, Bo Mi;Kim, Min Ju;Jeong, Yeon Gyeom;Park, Jin Il;Yu, Hong Sik;Oh, Eun Gyoung
    • Korean Journal of Fisheries and Aquatic Sciences
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    • v.54 no.4
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    • pp.377-387
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    • 2021
  • Fecal contamination levels of discharge water from inland pollution sources were investigated in Iwon-myeon (Taean-gun), South Korea. Gram-negative bacteria were isolated during the investigation and the antimicrobial resistance patterns of the isolates were examined to estimate their impact on the coastal environment. The ranges of total coliform and fecal coliform of 12 samples from four major inland pollution sources were 79-490,000 MPN/100 mL and 2.0-490,000 MPN/100 mL, respectively, with the highest level of fecal contamination at Station No. 3. A total of 137 strains (14 genus) were isolated, of which 86 strains (62.8%) were Enterobacteriaceae. The identified isolates were as follows: Pseudomonas spp. (35 strains), Klebsiella spp. (20 strains), Serratia spp. (20 strains), and Escherichia spp. (19 strains). The isolated Gram-negative bacteria showed the highest antimicrobial resistance to ampicillin (81.8%), followed by amoxicillin/clavulanic acid (64.2%), ceftiofur (61.3%), and cefoxitin (59.1%). Antimicrobials in which less than 10% of isolates showed antimicrobial resistance were ciprofloxacin (3.6%) and gentamicin (2.2%). Resistance to one or more antimicrobials was observed in 121 strains (88.3%) and 84 strains (61.3%) showed a tendency for multiple antimicrobial resistance.

Thrust Analysis and Experiments on Low-Speed Single-Sided Linear Induction Motor

  • Jeong, Jae-Hoon;Choi, Jang-Young;Sung, So-Young;Park, Jong-Won;Lim, Jaewon
    • Journal of Electrical Engineering and Technology
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    • v.12 no.1
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    • pp.230-235
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    • 2017
  • When the characteristics of a linear induction motor (LIM) are analyzed using finite element analysis (FEA), it is desirable to set the voltage source as an input. If the voltage source is set as an input in FEA, the leakage inductance and primary resistance of the equivalent circuit must be entered by direct calculation, and the magnetizing inductance and secondary reaction effects are directly considered in FEA. Exact calculation is necessary because the primary winding resistance and leakage inductance directly entered will have a significant effect on the LIM output. Therefore, in this study, we accurately calculated the primary leakage inductance and analyzed the resulting LIM characteristics. We calculated the leakage inductance using an analytical equation and FEA, and we confirmed the accuracy by comparing the results with the value experimentally calculated using a manufactured model. We also analyzed the instrument performance and thrust of the LIM as a function of the difference in the leakage inductance. Finally, we present the conclusions on the precise analysis based on the calculation of the leakage inductance.

Analyses for RF parameters of Tunneling FETs (터널링 전계효과 트랜지스터의 고주파 파라미터 추출과 분석)

  • Kang, In-Man
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.49 no.4
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    • pp.1-6
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    • 2012
  • This paper presents the extraction and analysis of small-signal parameters of tunneling field-effect transistors (TFETs) by using TCAD device simulation. The channel lengths ($L_G$) of the simulated devices varies from 50 nm to 100 nm. The parameter extraction for TFETs have been performed by quasi-static small-signal model of conventional MOSFETs. The small-signal parameters of TFETs with different channel lengths were extracted according to gate bias voltage. The $L_G$-dependency of the effective gate resistance, transconductance, source-drain conductance, and gate capacitance are different with those of conventional MOSFET. The $f_T$ of TFETs is inverely proportional not to $L_G{^2}$ but to $L_G$.