Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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A Study on Specific Contact Resistance Reduction of Ni Germanide/P-type Ge Using Terbium Interlayer

Terbium 중간층 적용을 통한 Ni Germanide/P-type Ge의 비접촉저항 감소 연구

  • Shin, Geon-Ho (Department of Electronics Engineering, Chungnam National University) ;
  • Li, Meng (Department of Electronics Engineering, Chungnam National University) ;
  • Lee, Jeongchan (Department of Electronics Engineering, Chungnam National University) ;
  • Song, Hyeong-Sub (Department of Electronics Engineering, Chungnam National University) ;
  • Kim, So-Yeong (Department of Electronics Engineering, Chungnam National University) ;
  • Lee, Ga-Won (Department of Electronics Engineering, Chungnam National University) ;
  • Oh, Jungwoo (School of Integrated Technology, Yonsei University) ;
  • Lee, Hi-Deok (Department of Electronics Engineering, Chungnam National University)
  • 신건호 (충남대학교 전자공학과) ;
  • 이맹 (충남대학교 전자공학과) ;
  • 이정찬 (충남대학교 전자공학과) ;
  • 송형섭 (충남대학교 전자공학과) ;
  • 김소영 (충남대학교 전자공학과) ;
  • 이가원 (충남대학교 전자공학과) ;
  • 오정우 (연세대학교 글로벌융합공학부) ;
  • 이희덕 (충남대학교 전자공학과)
  • Received : 2017.10.24
  • Accepted : 2017.11.10
  • Published : 2018.01.01
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Abstract

Ni germanide (NiGe) is a promising alloy material with small contact resistance at the source/drain (S/D) of Ge MOSFETs. However, it is necessary to reduce the specific contact resistance between NiGe and the doped Ge S/D region in high-performance MOSFETs. In this study, a novel method is proposed to reduce the specific contact resistance between NiGe and p-type Ge (p-Ge) using a Tb interlayer. The specific contact resistance between NiGe and p-Ge was successfully decreased with the introduction of the Tb interlayer. To investigate the mechanism behind the reduction in the specific contact resistance, the elemental distribution and crystalline structure of NiGe were analyzed using secondary ion mass spectroscopy and X-ray diffraction. It is likely that the reduction in specific contact resistance was caused by an increase in the concentration of boron in the space between NiGe and p-Ge due to the influence of the Tb interlayer.

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References

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