• 제목/요약/키워드: source profile

검색결과 600건 처리시간 0.029초

Role of Arbitrary Intensity Profile Laser Beam in Trapping of RBC for Phase-imaging

  • Kumar, Ranjeet;Srivastava, Vishal;Mehta, Dalip Singh;Shakher, Chandra
    • Journal of the Optical Society of Korea
    • /
    • 제20권1호
    • /
    • pp.78-87
    • /
    • 2016
  • Red blood cells (RBCs) are customarily adhered to a bio-functionalised substrate to make them stationary in interferometric phase-imaging modalities. This can make them susceptible to receive alterations in innate morphology due to their own weight. Optical tweezers (OTs) often driven by Gaussian profile of a laser beam is an alternative modality to overcome contact-induced perturbation but at the same time a steeply focused laser beam might cause photo-damage. In order to address both the photo-damage and substrate adherence induced perturbations, we were motivated to stabilize the RBC in OTs by utilizing a laser beam of ‘arbitrary intensity profile’ generated by a source having cavity imperfections per se. Thus the immobilized RBC was investigated for phase-imaging with sinusoidal interferograms generated by a compact and robust Michelson interferometer which was designed from a cubic beam splitter having one surface coated with reflective material and another adjacent coplanar surface aligned against a mirror. Reflected interferograms from bilayers membrane of a trapped RBC were recorded and analyzed. Our phase-imaging set-up is limited to work in reflection configuration only because of the availability of an upright microscope. Due to RBC’s membrane being poorly reflective for visible wavelengths, quantitative information in the signal is weak and therefore, the quality of experimental results is limited in comparison to results obtained in transmission mode by various holographic techniques reported elsewhere.

STI CMP후 Topology에 따른 Gate Etch, Transistor 특성 변화 (Property variation of transistor in Gate Etch Process versus topology of STI CMP)

  • 김상용;정헌상;박민우;김창일;장의구
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
    • /
    • pp.181-184
    • /
    • 2001
  • Chemical Mechanical Polishing(CMP) of Shallow Trench Isolation(STD structure in 0.18 m semiconductor device fabrication is studied. CMP process is applied for the STI structure with and without reverse moat pattern and End Point Detection (EPD) method is tested. To optimize the transistor properties related metal 1 parameters. we studied the correlation between CMP thickness of STI using high selectivity slurry. DOE of gate etch recipe, and 1st metal DC values. Remaining thickness of STI CMP is proportional to the thickness of gate-etch process and this can affect to gate profile. As CMP thickness increased. the N-poly foot is deteriorated. and the P-Poly Noth is getting better. If CD (Critical Dimension) value is fixed at some point,, all IDSN/P values are in inverse proportional to CMP thickness by reason of so called Profile Effect. Weve found out this phenomenon in all around DOE conditions of Gate etch process and we also could understand that it would not have any correlation effects between VT and CMP thickness in the range of POE 120 sec conditions. As CMP thickness increased by $100\AA$. 3.2 $u\AA$ of IDSN is getting better in base 1 condition. In POE 50% condition. 1.7 $u\AA$ is improved. and 0.7 $u\AA$ is improved in step 2 condition. Wed like to set the control target of CD (critical dimension) in gate etch process which can affect Idsat, VT property versus STI topology decided by CMP thickness. We also would like to decide optimized thickness target of STI CMP throughout property comparison between conventional STI CMP with reverse moat process and newly introduced STI CMP using high selectivity slurry. And we studied the process conditions to reduce Gate Profile Skew of which source known as STI topology by evaluation of gate etch recipe versus STI CMP thickness.

  • PDF

Growth Profile and Toxigenicity of Bacillus cereus in Ready-to-eat Food Products of Animal Origin

  • Oh, Mi-Hwa;Ham, Jun-Sang;Seol, Kuk-Hwan;Jang, Ae-Ra;Lee, Seung-Gyu;Lee, Jong-Moon;Park, Beom-Young;Kang, Eun-Sil;Kwon, Ki-Sung;Hwang, In-Gyun
    • 한국축산식품학회지
    • /
    • 제31권1호
    • /
    • pp.40-46
    • /
    • 2011
  • The growth profile of Bacillus cereus in ready-to-eat (RTE) food products of animal origin was examined under different temperature and incubation conditions. In sandwiches and Kimbab, B. cereus did not grow or exhibited only minimal growth at 4 and $10^{\circ}C$, but it grew rapidly at ambient temperature. In sandwiches, B. cereus did not grow efficiently at $25^{\circ}C$, however, in ham, the main ingredient of sandwiches, B. cereus growth was observed at the same temperature, with bacterial levels reaching 7.94 Log CFU/g after incubation for 24 h at $25^{\circ}C$. Toxigenicity of B. cereus was observed only at temperatures above $25^{\circ}C$. In Kimbab, B. cereus produced toxin after 9 h at $30^{\circ}C$ and after 12 h at $25^{\circ}C$. Ingredients of sandwiches and Kimbab were collected from 3 different Korean food-processing companies to investigate the source of contamination by B. cereus. Among the 13 tested food items, 6 items including ham were found to be contaminated with B. cereus. Of these ingredients, B. cereus isolates from 3 items produced enterotoxins. None of these isolates harbored the emetic toxin-producing gene. The findings of the present study can be used for risk assessments of food products, including ham and cheese, contaminated with B. cereus.

STI CMP후 Topology에 따른 Gate Etch, Transistor 특성 변화 (Property variation of transistor in Gate Etch Process versus topology of STI CMP)

  • 김상용;정헌상;박민우;김창일;장의구
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 2001년도 추계학술대회 논문집
    • /
    • pp.181-184
    • /
    • 2001
  • Chemical Mechanical Polishing(CMP) of Shallow Trench Isolation(STI) structure in 0.18 m semiconductor device fabrication is studied. CMP process is applied for the STI structure with and without reverse moat pattern and End Point Detection (EPD) method is tested. To optimize the transistor properties related metal 1 parameters, we studied the correlation between CMP thickness of STI using high selectivity slurry, DOE of gate etch recipe, and 1st metal DC values. Remaining thickness of STI CMP is proportional to the thickness of gate-etch process and this can affect to gate profile. As CMP thickness increased, the N-poly foot is deteriorated, and the P-Poly Noth is getting better. If CD (Critical Dimension) value is fixed at some point, all IDSN/P values are in inverse proportional to CMP thickness by reason of so called Profile Effect. Weve found out this phenomenon in all around DOE conditions of Gate etch process and we also could understand that it would not have any correlation effects between VT and CMP thickness in the range of POE 120 sec conditions. As CMP thickness increased by 100 ${\AA}$, 3.2 u${\AA}$ of IDSN is getting better in base 1 condition. In POE 50% condition, 1.7 u${\AA}$ is improved, and 0.7 u${\AA}$ is improved in step 2 condition. Wed like to set the control target of CD (critical dimension) in gate etch process which can affect Idsat, VT property versus STI topology decided by CMP thickness. We also would like to decide optimized thickness target of STI CMP throughout property comparison between conventional STI CMP with reverse moat process and newly introduced STI CMP using high selectivity slurry. And we studied the process conditions to reduce Gate Profile Skew of which source known as STI topology by evaluation of gate etch recipe versus STI CMP thickness.

  • PDF

SIMS 분석조건이 Bismuth Titanate 박막의 깊이방향 조성 해석에 미치는 영향 (Effect of Surface Charging on the SIMS Depth Profile of Bismuth Titanate Thin Film)

  • 김재남;이상업;권혁대;신광수;전웅;박병옥;조상희
    • 분석과학
    • /
    • 제14권6호
    • /
    • pp.486-493
    • /
    • 2001
  • 본 연구는 SIMS를 이용한 bismuth titanate 박막의 깊이방향 분석에 있어서 mesh grid를 사용한 경우와 사용하지 않은 경우, offset voltage를 사용한 경우와 사용하지 않은 경우 등 분석조건에 따른 charging effect 그리고 검출한계의 특성을 검토하고자 하였다. 결과에 따르면 -40 V의 offset voltage를 사용하였을 경우는 charging effect의 감소는 물론 검출한계도 낮출 수 있었으나 mesh grid를 사용하였을 경우에는 charging effect는 다소 줄일 수 있었으나 반면 검출 한계는 오히려 높아졌다. O- 일차이온을 적용한 경우는 -40 V의 offset voltage를 사용하였을 때와 동일한 효과를 얻을 수 있었다.

  • PDF

비대칭 DGMOSFET의 도핑분포함수에 따른 DIBL (Drain Induced Barrier Lowering of Asymmetric Double Gate MOSFET for Channel Doping Profile)

  • 정학기
    • 한국정보통신학회논문지
    • /
    • 제19권11호
    • /
    • pp.2643-2648
    • /
    • 2015
  • 본 연구에서는 비대칭 이중게이트 MOSFET의 채널 내 도핑농도분포에 대한 드레인유도장벽감소(Drain Induced Barrier Lowering; DIBL)에 대하여 분석하고자한다. DIBL은 드레인 전압에 의하여 소스 측 전위장벽이 낮아지는 효과로서 중요한 단채널 효과이다. 이를 분석하기 위하여 포아송방정식을 이용하여 해석학적 전위분포를 구하였으며 전위분포에 영향을 미치는 채널도핑농도의 분포함수변화에 대하여 DIBL을 관찰하였다. 채널길이, 채널두께, 상하단 게이트 산화막 두께, 하단 게이트 전압 등을 파라미터로 하여 DIBL을 관찰하였다. 결과적으로 DIBL은 채널도핑 농도분포함수의 변수인 이온주입범위 및 분포편차에 변화를 나타냈다. 특히 두 변수에 대한 DIBL의 변화는 최대채널도핑농도가 $10^{18}/cm^3$ 정도로 고도핑 되었을 경우 더욱 현저히 나타나고 있었다. 채널길이가 감소할수록 그리고 채널두께가 증가할수록 DIBL은 증가하였으며 하단 게이트 전압과 상하단게이트 산화막 두께가 증가할수록 DIBL은 증가하였다.

Improvement of Calculation Accuracy in the Electron Monte Carlo Algorithm with Optional Air Profile Measurements

  • Sung, Jiwon;Jin, Hyeongmin;Kim, Jeongho;Park, Jong Min;Kim, Jung-in;Choi, Chang Heon;Chun, Minsoo
    • 한국의학물리학회지:의학물리
    • /
    • 제31권4호
    • /
    • pp.163-171
    • /
    • 2020
  • Purpose: In this study, the accuracies of electron Monte Carlo (eMC) calculation algorithms were evaluated to determine whether electron beams were modeled by optional air profiles (APs) designed for each applicator size. Methods: Electron beams with the energies of 6, 9, 12, and 16 MeV for VitalBeam (Varian Medical System, Palo Alto, CA, USA) and 6, 9, 12, 16, and 20 MeV for Clinac iX (Varian Medical System) were used. Optional APs were measured at the source-to-detector distance of 95 cm with jaw openings appropriate for each machine, electron beam energy, and applicator size. The measured optional APs were postprocessed and converted into the w2CAD format. Then, the electron beams were modeled and calculated with and without optional APs. Measured profiles, percentage depth doses, penumbras with respect to each machine, and energy were compared to calculated dose distributions. Results: For VitalBeam, the profile differences between the measurement and calculation were reduced by 0.35%, 0.15%, 0.14%, and 0.38% at 6, 9, 12, and 16 MeV, respectively, when the beams were modeled with APs. For Clinac iX, the differences were decreased by 0.16%, -0.31%, 0.94%, 0.42%, and 0.74%, at 6, 9, 12, 16, and 20 MeV, respectively, with the insertion of APs. Of note, no significant improvements in penumbra and percentage depth dose were observed, although the beam models were configured with APs. Conclusions: The accuracy of the eMC calculation can be improved in profiles when electron beams are modeled with optional APs.

악성 앱 분석 도구 보호프로파일 개발 (Development of Protection Profile for Malware App Analysis Tool)

  • 정재은;정수빈;고상석;백남균
    • 한국정보통신학회:학술대회논문집
    • /
    • 한국정보통신학회 2022년도 춘계학술대회
    • /
    • pp.374-376
    • /
    • 2022
  • 악성 앱 분석 도구는 안드로이드 기반 앱을 도구에 정의된 AI 기반 알고리즘에 의해 분석되어 악성코드가 포함되었는지 탐지하는 시스템이다. 현재 스마트폰의 보급이 활성화됨에 따라 악성 앱을 사용한 범죄가 증가하였고, 이에 따라 악성 앱에 대한 보안이 요구되는 실정이다. 스마트폰에 사용되는 안드로이드 운영체제는 점유율이 70%이상이며, 오픈소스 기반이기 때문에 많은 취약성 및 악성코드가 존재할뿐만 아니라, 악성 앱에 대한 피해도 증가하여 악성 앱을 탐지하고 분석하는 도구에 대한 수요도 증가할 것이다. 하지만, 악성 앱 분석 도구에 대한 보안기능요구사항이 정확히 명시되지 않아, 악성 앱 분석도구를 구축 및 개발하는데 있어 많은 어려움이 있기 때문에 본 논문을 제안한다. 개발한 보호프로파일을 통해 악성 앱 분석 도구의 설계 및 개발에 기반이 되어 기술력을 향상시킬 수 있고, 악성 앱에 대한 피해를 최소화하여 안전성을 확보 할 수 있으며, 더 나아가 정보보호제품 인증을 통해 악성 앱 분석 도구에 대한 신뢰를 보증할 수 있다.

  • PDF

Effects of Source of Supplemental Zinc on Performance, Nutrient Digestibility and Plasma Mineral Profile in Cashmere Goats

  • Jia, Wenbin;Zhu, Xiaoping;Zhang, Wei;Cheng, Jianbo;Guo, Cuihua;Jia, Zhihai
    • Asian-Australasian Journal of Animal Sciences
    • /
    • 제22권12호
    • /
    • pp.1648-1653
    • /
    • 2009
  • This experiment was designed to evaluate the effects of source of supplemental zinc (Zn) on performance, nutrient digestibility and plasma mineral profile in Cashmere goats during the cashmere fiber growing period. Twenty-seven Liao Ning Cashmere wether goats (9-10 month of age; initial BW = 19.31${\pm}$0.32 kg) were fed a basal diet (containing 22.3 mg Zn/kg DM) with no supplemental Zn (control) or 20 mg of supplemental Zn/kg of DM from Zn sulfate ($ZnSO_{4}$) or Zn methionine (ZnMet) for 60 days including a 10-day metabolism trial. Average daily gain (ADG) (p<0.05) and gain:feed (G/F) (p<0.05) were increased by Zn supplementation, but no differences were noted between Zn sources (p>0.05). The length and diameter of cashmere fiber did not differ among treatments (p>0.05). Zn supplementation had no influence on digestibility of DM, CP, EE and NDF (p>0.05). However, ADF digestibility in the group supplemented with ZnMet was significantly higher than in other treatments (p<0.05). Plasma Zn was increased (p<0.05) and Cu tended to be decreased (p = 0.057) by Zn supplementation, but no differences were found between Zn sources (p>0.05). Plasma alkaline phosphatase activity (AKP) was improved by Zn supplementation (p<0.05) and was higher in the $ZnSO_{4}$ than the ZnMet group (p<0.05). Zn retention was increased (p<0.05) and apparent absorption rate was decreased (p<0.05) by Zn supplementation. The results indicate that supplementation of 20 mg Zn/kg DM either as $ZnSO_{4}$ or ZnMet in the basal diet containing 22.3 mg Zn/kg DM can improve growth performance in Cashmere goats, and effectiveness of the two sources is similar on performance measurements.

NGIS 수치지형도를 이용한 효율적인 홍수범람모의용 지형자료 구축에 관한 연구 (A Study on the Generation of DEM for Flood Inundation Simulation using NGIS Digital Topographic Maps)

  • 권오준;김계현
    • 대한공간정보학회지
    • /
    • 제14권1호
    • /
    • pp.49-55
    • /
    • 2006
  • 최근 들어 국내에서는 홍수에 의한 재산과 인명피해를 최소화하기 위해 지역특성에 알맞은 홍수지도를 제작 중에 있으며, 주로 LiDAR를 이용하여 홍수지도 제작을 위한 지형자료를 구축하고 있다. 그러나 LiDAR를 이용한 구축에 많은 시간과 높은 비용이 소요되기 때문에 이미 전국적으로 NGIS(국가GIS구축사업)사업을 통하여 구축된 수치지형도를 이용한 홍수지도의 구축 가능성과 타당성에 대한 검증 필요성이 제기되고 있다. 이에 따라 본 연구에서는 NGIS 수치지형도를 이용하여 홍수범람모의용 지형자료를 구축하기 위한 방안을 제시하였다. 이를 위하여 물의 흐름에 중요한 역할을 하는 breakline을 처리하고, 동시에 하상주변의 실제지형을 나타내는 유일한 자료인 하천종횡단자료를 연계하여 홍수범람모의용 DEM을 제작하였다. 경기도 구리시를 대상으로 1:1,000과 1:5,000의 NGIS 수치지형도를 활용하여 breakline을 처리하고 하천종횡단자료를 수치지형도와 연계하여 보간법을 기반으로 DEM을 구축하였다. 구축된 DEM은 1:1,000지형도가 전체 대상지역에 존재하지 않아 일부 지역에 대하여 1:5,000 지형도를 활용함으로써 상대적으로 위치 정확도는 떨어졌으나 홍수지도의 구축에는 적합한 정확도와 데이터의 정밀도를 제시하였다. 아울러 비용경제적 측면에서 매우 높은 효율성을 제시하였다. 반면 향후 NGIS 지형도의 보다 원만한 활용을 위하여 1:1,000 지형도의 갱신이 주기적으로 이루어져야 하며, 보간법의 적용에 있어서 고려사항과 breakline 구축을 위한 기술적 고려 사항 등이 정리되어야 하는 필요성을 제기하였다.

  • PDF