• Electrical & Electronic Materials
• /
• v.10 no.8
• /
• pp.783-793
• /
• 1997

A VLSI implementation of a self-learning neural network integrated circuits using a linearity synapse transistor is investigated. The thickness dependence of oxide current density stress current transient current and channel current has been measured in oxides with thicknesses between 41 and 112 $\AA$, which have the channel width $\times$ length 10 $\times$1${\mu}{\textrm}{m}$, 10 $\times$ 0.3${\mu}{\textrm}{m}$ respectively. The transient current will affect data retention in synapse transistors and the stress current is used to estimate to fundamental limitations on oxide thicknesses. The synapse transistor has represented the neural states and the manipulation which gaves unipolar weights. The weight value of synapse transistor was caused by the bias conditions. Excitatory state and inhitory state according to weighted values affected the drain source current.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.07a
• /
• pp.59-62
• /
• 2000

A VLSI implementation of a self-learning neural network integrated circuits using a linearity synapse transistor is investigated. The thickness dependence of oxide current density, stress current, transient current and channel current has been measured in oxides with thicknesses between 41 and 112 $\AA$, which have the channel width$\times$length 10$\times$1${\mu}{\textrm}{m}$ respectively. The transient current will affect data retention in synapse transistors and the stress current is used to estimate to fundamental limitations on oxide thicknesses. The synapse transistor has represented the neural states and the manipulation which gave unipolar weights. The weight value of synapse transistor was caused by the bias conditions. Excitatory state and inhitory state according to weighted values affected the drain source current.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.16 no.9 s.100
• /
• pp.957-963
• /
• 2005

This paper presents technique of wideband TIA for optical communication systems using TSMC 0.25 ${\mu}m$ CMOS RF-Mixed mode. In order to improve bandwidth characteristics of an TIA, we use active inductor shunt peaking to cascode and common-source configuration. The result shows the 37 mW and 45 mW power dissipation with 2.5 V bias and 61 dB$\Omega$ and 61.4 dB$\Omega$ transimpedance gain. And the -3 dB bandwidth of the TIA is enhanced from 0.8 GHz to 1.45 GHz in cascode and 0.61 GHz to 0.9 GHz in common-source. And the input noise current density is $5 pA/\sqrt{Hz}$ and $4.5 pA/\sqrt{Hz}$, and -10 dB out put return loss is obtained in 1.45 GHz. The total size of the chip is $1150{\times}940{\mu}m^2$.

• Proceedings of the Korean Society for Cognitive Science Conference
• /
• 2005.05a
• /
• pp.151-153
• /
• 2005

We investigated the brain substrate of repetition priming on the implicit memory taskusing low-resolution electromagnetic tomography (LORETA) with high-density 128 channel EEG and individual MRI as a realistic head model. Thirteen right-handed, healthy subjects performed a word/nonword discrimination task, in which the words and nonwords were presented visually,and some of the words appeared twice with a lag of one or five items. All of the subjects exhibited repetition priming with respect to the behavioral data, in which a faster reaction time was observed to the repeated word (old word) than to the first presentation of the word (new word). The old words elicited more positive-going potentials than the new words, beginning at 200 ms and lasting until 500 ms post-stimulus. We conducted source reconstruction using LORETA at a latency of 400 ms with the peak mean global field potentials and used statistical parametric mapping for the statistical analysis. We found that the source elicited by the old words exhibited a statistically significant current density reduction in the left inferior frontal gyrus. This is the first study to investigate the generators of repetition priming using voxel-by-voxel statistical mapping of the current density with individual MRI and high-density EEG.

• Journal of Radiation Protection and Research
• /
• v.31 no.2
• /
• pp.105-113
• /
• 2006

The oxidizing species are generated from the radiolysis of groundwater in the pore of buffer material around the canister used for the disposal of spent fuels. A mathematical model was introduced to calculate the cathodic current density induced by the oxidant around the canister, which determined the corrosion of carbon steel. An analytical solution was derived to get the cathodic current density in the cylindrical coordinate. The cathodic current densities from both the rectangular coordinate and cylindrical coordinate were compared with each other. The source terms and absorbed dose rate for the calculation of the radiolysis were calculated using the ORIGEN2 and MCNP computer code, respectively. The radius of the canister was determined with the new model in order to prevent the local corrosion. The results showed that the new solution made the cathodic current density around 25 % lower than the Marsh model.

• Current Applied Physics
• /
• v.18 no.11
• /
• pp.1415-1421
• /
• 2018

Unlike ordinary organic field-effect transistors (OFETs), saturation current is hardly to be found in vertical OFETs (VOFETs). Moreover, the fabrication process of patterned sourced for VOFETs is quite complex. In this current work, a simple solution processed VOFET with directly deposited intermediate silver source electrode has been demonstrated. The VOFET exhibits a high leakage current that induces an inversion polarity of its transistor behavior. Interestingly, a well-defined saturation current was observed in the linear scale of transfer characteristic. The VOFET operated with high-current density > $280mA/cm^2$ at $V_d=5V$. Overview potential of the fabricated device in display application is also presented. This preliminary work does open-up a new direction in VOFET fabrication and their application.

• Korean Journal of Materials Research
• /
• v.32 no.7
• /
• pp.320-325
• /
• 2022

Single OLED and tandem OLED was manufactured to analyze the electroluminescence characteristics of DC driving, AC driving, and full-wave rectification driving. The threshold voltage of OLED was the highest in DC driving, and the lowest in full-wave rectification driving due to an improvement of current injection characteristics. The luminance at a driving voltage lower than 10.5 V (8,534 cd/m²) of single OLED and 20 V (7,377 cd/m²) of a tandem OLED showed that the full-wave rectification drive is higher than that of DC drive. The luminous efficiency of OLED is higher in full-wave rectification driving than in DC driving at low voltage, but decrease at high voltage. The full-wave rectification power source may obtain higher current density, higher luminance, and higher current efficiency than the AC power source. In addition, it was confirmed that the characteristics of AC driving and full-wave rectification driving can be predicted from DC driving characteristics by comparing the measured values and calculated values of AC driving and full-wave rectification driving emission characteristics. From the above results, it can be seen that OLED lighting with improved electroluminescence characteristics compared to DC driving is possible using full-wave rectification driving and tandem OLED.

• Journal of Korean Vacuum Science & Technology
• /
• v.5 no.1
• /
• pp.19-24
• /
• 2001

The paper represents the results of the development and the test of "cold cathode" ion source model with 5 cm aperture where the glow discharge is utilized for generation of electrons in the cathode of the ion source. The results of probe measurements of the ion source are represented. The integral parameters such as electron energy distribution function(EEDF), electron density and mean electron energy, discharge voltage-current characteristics, and distribution of ion beam were studied.

• Transactions on Electrical and Electronic Materials
• /
• v.18 no.3
• /
• pp.176-179
• /
• 2017

Non-vacuum processing technology was used to produce $Cs_3Sb$ photocathodes on substrates and fabricate in-situ panel devices. Electrical properties of these panel devices were characterized by measuring anode current and charge dose as functions of devices operation time. An excitation light source with a 475 nm wavelength was used for photocathodes. Results showed that emission properties of these photocathode emitters depended heavily on the vacuum level of these devices and that $Cs_3Sb$ flat emitters had the potential of operating for a long lifetime with stable electron emission characteristics via re-cesiation process in the panel device. These features make $Cs_3Sb$ photocathodes suitable as flat emitters in panel device applications.

• ETRI Journal
• /
• v.24 no.5
• /
• pp.333-340
• /
• 2002

We propose a new process technique for fabricating very high-density trench MOSFETs using 3 mask layers with oxide spacers and a self-aligned technique. This technique reduces the device size in trench width, source, and p-body region with a resulting increase in cell density and current driving capability as well as cost-effective production capability. We were able to obtain a higher breakdown voltage with uniform oxide grown along the trench surface. The channel density of the trench DMOSFET with a cell pitch of 2.3-2.4 ${\mu}m$ was 100 Mcell/$in^2$ and a specific on-resistance of 0.41 $m{\Omega}{\cdot}cm^2$ was obtained under a blocking voltage of 43 V.