• Journal of the Korean Ceramic Society
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• v.42 no.2 s.273
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• pp.123-126
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• 2005

Barium Titanate (BT) powders were synthesized by solvothermal method with an ethanol as a solvent. The average particle size was increased with the feedstock concentration: the size was 59 nm at $6.25{\times}10^{-2}$ M and 89 nm at 0.5 M. The sample obtained at 0.5 M concentration was analysed by Rietveld refinement and the mole fraction of tetragonal phase was $75.5\%$ and lattice parameter of tetragonal phase was a=0.3999 (nm), c=0.4032 (nm), and cubic phase was a=0.4015 (nm). TEM analysis for the samples with condition of annealing at $500^{\circ}C$ for I h showed that hydroxyl ions on oxygen sites were not found for these experimental conditions.

• Journal of the Korean Ceramic Society
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• v.40 no.7
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• pp.709-714
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• 2003

Eu doped $Y_2$ $O_3$ nanoparticles were prepared with the solvothermal synthesis using the ethyleneglycol solvent at 20$0^{\circ}C$ for 3-5 h and then annealed in air at 1000-140$0^{\circ}C$ for 2-4 h. The X-ray diffraction pattern of annealed crystals at 100$0^{\circ}C$ for 2 h could be indexed as pure cubic cell of $Y_2$ $O_3$ phase with lattice parameters a=10.5856 $\AA$ which is very close to the reported data (JCPDS Card File, 41-1105 a=10.6041 $\AA$). Average size of prepared phosphor particles have about 100 nm, which were spherical morphology. The phosphor particle sizes decreased and the emission intensity increased at the annealing temperature. Though PL spectrum analysis, the 3% Eu doped $Y_{2-x}$ $O_3$:E $u_{x}$ $^{3+}$(x=0.06) phosphor showed the excitation spectrum at 250 nm wavelength and the maximum emission spectrum at 611 nm wavelength.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.289.1-289.1
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• 2014

In this study, we made a organic thin film device in MIS(Metal-Insulator-Semiconductor) structure by using PVP (Poly vinyl phenol) as a insulating layer, and CdSe/ZnS nano particles which have a core/shell structure inside. We dissolved PVP and PMF in PGMEA, organic solvent, then formed a thin film through a spin coating. After that, it was cross-linked by annealing for 1 hour in a vacuum oven at $185^{\circ}C$. We operated FTIR measurement to check this, and discovered the amount of absorption reduced in the wave-length region near 3400 cm-1, so could observe decrease of -OH. Boonton7200 was used to measure a C-V relationship to confirm a properties of the nano particles, and as a result, the width of the memory window increased when device including nano particles. Additionally, we used HP4145B in order to make sure the electrical characteristics of the organic thin film device and analyzed a conduction mechanism of the device by measuring I-V relationship. When the voltage was low, FNT occurred chiefly, but as the voltage increased, Schottky Emission occurred mainly. We synthesized CdSe/ZnS and to confirm this, took a picture of Si substrate including nano particles with SEM. Spherical quantum dots were properly made. Due to this study, we realized there is high possibility of application of next generation memory device using organic thin film device and nano particles, and we expect more researches about this issue would be done.

• 한국신재생에너지학회:학술대회논문집
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• 2009.11a
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• pp.158-158
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• 2009

The electrophoretic deposition(EPD) technique with a wide range of novel applications in the processing of advanced ceramic materials and coatings, has recently gained increasing interest both in academic and industrial sector not only because of the high versatility of its use with different materials and their combinations but also because of its cost-effectiveness requiring simple apparatus. Compared to other advanced shaping techniques, the EPD process is very versatile since it can be modified easily for a specific application. For example, deposition can be made on flat, cylinderical or any other shaped substrate with only minor charge in electrode design and positioning[1]. The synthesis of the nano-sized Ce0.2Sm0.8O1.9(SDC)particles prepared by aurea based low temperature hydrothermal process was investigated in this study[2].When we made the SDC nanoparticles, changed the time of synthesis of the SDC. The SDC nanoparticles were characterized with field-emission scanning electron microscope(FESEM), energy dispersive X-ray analysis(EDX), and X-ray diffraction(XRD). And also we researched the results of our investigation on electrophoretic deposition(EPD) of the SDC particles from its suspension in acetone solution onto a non-conducting NiO-SDC substrate. In principle, it is possible to carry out electrophoretic deposition on non-conducting substrates. In this case, the EPD of SDC particles on a NiO-SDC substrate was made possible through the use of a adequately porous substrate. The continuous pores in the substrates, when saturated with the solvent, helped in establishing a "conductive path" between the electrode and the particles in suspension[3-4]. Deposition rate was found to increase its increasing deposition time and voltage. After annealing the samples $1400^{\circ}C$, we observed that deposited substrate.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.169-170
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• 2006

In this study, ultra thin films of ferroelectric vinylidene fluoride-trifluoroethylene (VF2-TrFE) copolymer were fabricated on degenerated Si (n+, $0.002\;{\Omega}{\cdot}cm$) using by spin coating method. A 1~5 wt% diluted solution of purified vinylidene fluoride-trifluoroethylene (VF2:TrFE=70:30) in a dimethylformamide (DMF) solvent were prepared and deposited on silicon wafers at a spin rate of 2000~5000rpm for 30 seconds. After annealing in a vacuum ambient at $200^{\circ}C$ for 60 min, upper gold electrodes were deposited by vacuum evaporation for electrical measurement. X-ray diffraction results showed that the VF2-TrFE films on Si substrates had $\beta$-phase of copolymer structures. The capacitance on $n^+$-Si(100) wafer showed hysteresis behavior like a butterfly shape and this result indicates clearly that the dielectric films have ferroelectric properties. The typical measured remnant polarization (2Pr) and coercive filed (EC) values measured using a computer controlled a RT-66A standardized ferroelectric test system (Radiant Technologies) were about $0.54\;C/cm^2$ and 172 kV/cm, respectively, in an applied electric field of ${\pm}0.75\;MV/cm$.

• Korean Journal of Materials Research
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• v.30 no.7
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• pp.369-375
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• 2020

FDM 3D printing structures have rough surfaces and require post-treatment to improve the properties. Fumigation is a representative technique for removing surface unevenness. Surface treatment by fumigation proceeds by dissolving the surface of the protruding structure using a vaporized solvent. In this study, 3D printed PVB outputs are surface-treated with ethyl-alcohol fumigation. As the fumigation time increases, the surface flattens as ethanol dissolves the mountains on the surface of PVB and the surface valleys are filled with dissolved PVB. Through the fumigation process, the mechanical strength tends to decrease, and deformation rate increases. Ethanol vapor permeates into PVB, widening the distance between chains and resulting in weak bonding strength between chains. In order to confirm the effect of fumigation only, an annealing process is performed at 80 ℃ for 1, 5, 10, 30, and 50 minutes and the results of the fumigation are compared.

• Journal of the Microelectronics and Packaging Society
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• v.26 no.3
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• pp.59-62
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• 2019

In this study, we have developed solution-processed, F-doped In-Ga-Zn-O semiconductors and investigated their applications to thin-film transistors. In order for forming the appropriate channel layer, precursor solutions were formulated by dissolving the metal salts in the designated solvent and an additive, ammonium fluoride, was incorporated additionally as a chemical modifier. We have studied thermal and chemical contributions by a thermal annealing and an incorporation of chemical modifier, from which it was revealed that electrical performances of the thin-film transistors comprising the channel layer annealed at a low temperature can be improved significantly along with an addition of ammonium fluoride. As a result, when the 20 mol% fluorine was incorporated into the semiconductor layer, electrical characteristics were accomplished with a field-effect mobility of $1.2cm^2/V{\cdot}sec$ and an $I_{on}/_{off}$ of $7{\times}10^6$.

• Bulletin of the Korean Chemical Society
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• v.33 no.9
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• pp.3061-3070
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• 2012

Novel 2-hexylthieno[3,2-b]thiophene-containing conjugated molecules have been synthesized via a reduction reaction using tin chloride in an acidic medium. They exhibited good solubility in common organic solvents and good self-film and crystal-forming properties. The single-crystalline objects were fabricated by a solvent slow diffusion process and then were employed for fabricating field-effect transistors (FETs) along with thinfilm transistors (TFTs). TFTs made of 5 and 6 exhibited carrier mobility as high as 0.10-0.15 $cm^2V^{-1}s^{-1}$. The single-crystal-based FET made of 6 showed 0.70 $cm^2V^{-1}s^{-1}$ which was relatively higher than that of the 5-based FET (${\mu}=0.23cm^2V^{-1}s^{-1}$). In addition, we fabricated organic photovoltaic (OPV) cells with new 2-hexylthieno [3,2-b]thiophene-containing conjugated molecules and methanofullerene [6,6]-phenyl C61-butyric acid methyl ester ($PC_{61}BM$) without thermal annealing. The ternary system for a bulk heterojunction (BHJ) OPV cell was elaborated using $PC_{61}BM$ and two p-type conjugated molecules such as 5 and 7 for modulating the molecular energy levels. As a result, the OPV cell containing 5, 7, and $PC_{61}BM$ had improved results with an open-circuit voltage of 0.90 V, a short-circuit current density of 2.83 $mA/cm^2$, and a fill factor of 0.31, offering an overall power conversion efficiency (PCE) of 0.78%, which was larger than those of the devices made of only molecule 5 (${\eta}$~0.67%) or 7 (${\eta}$~0.46%) with $PC_{61}BM$ under identical weight compositions.

• Korean Journal of Materials Research
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• v.25 no.12
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• pp.719-726
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• 2015

For a decade, solution-processed functional materials and various printing technologies have attracted increasingly the significant interest in realizing low-cost flexible electronics. In this study, Cu nanoparticles are synthesized via the chemical reduction of Cu ions under inert atmosphere. To prevent interparticle agglomeration and surface oxidation, oleic acid is incorporated as a surface capping molecule and hydrazine is used as a reducing agent. To endow water-compatibility, the surface of synthesized Cu nanoparticles is modified by a mixture of carboxyl-terminated anionic polyelectrolyte and polyoxylethylene oleylamine ether. For reducing the surface tension and the evaporation rate of aqueous Cu nanoparticle inks, the solvent composition of Cu nanoparticle ink is designed as DI water:2-methoxy ethanol:glycerol:ethylene glycol = 50:20:5:25 wt%. The effects of poly(styrene-co-maleic acid) as an adhesion promoter(AP) on rheology of aqueous Cu nanoparticle inks and adhesion of Cu pattern printed on polyimid films are investigated. The 40 wt% aqueous Cu nanoparticle inks with 0.5 wt% of Poly(styrene-co-maleic acid) show the "Newtonian flow" and has a low viscosity under $10mPa{\cdots}S$, which is applicable to inkjet printing. The Cu patterns with a linewidth of $50{\sim}60{\mu}m$ are successfully fabricated. With the addition of Poly(styrene-co-maleic acid), the adhesion of printed Cu patterns on polyimid films is superior to those of patterns prepared from Poly(styrene-co-maleic acid)-free inks. The resistivities of Cu films are measured to be $10{\sim}15{\mu}{\Omega}{\cdot}cm$ at annealing temperature of $300^{\circ}C$.

• Journal of the Korean Ceramic Society
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• v.38 no.11
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• pp.1008-1014
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• 2001

Nanosize YIG powders added by Cerium which is exellent element in magneto-optical effect were synthesized by Sol-Gel method using Ethylene Glycol solvent. In 120 to 150 minute reaction time, stable sol solution which showed no change in viscosity, pH, and aging time was obtained. Monolithic YIG was synthesized at 80$0^{\circ}C$ with DTA and XRD measurement and its lattice parameter had a tendency to increase from 12.3921 $\AA$. Increasing annealing temperature from 80$0^{\circ}C$ to 105$0^{\circ}C$, average particle size was in the range of 40 nm to 330 nm. Saturation magnetization (M$_{s}$) value was increased from 18.37 to 21.25 emu/g due to enhancement of YIG crystallity and decreasing of orthoferrite phase. On the other hand, coercivity (H$_{c}$) value increased up to 90$0^{\circ}C$ and then decreased above 90$0^{\circ}C$. With increasing Ce addition, coercivity was almost not changed but saturation magnetization value was maximum at Ce 0.1 mol% and then decreased because of increasing a orthoferrite amount. Also, curie temperature (T$_{c}$) of YIG were not changed with Ce addition.ion.