• 한국재료학회지
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• 제27권11호
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• pp.631-635
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• 2017

We report facile solution processing of mesoporous hematite (${\alpha}-Fe_2O_3$) thin films for high efficiency solar-driven water splitting. $Fe_2O_3$ thin films were prepared on fluorine doped tin oxide(FTO) conducting substrates by spin coating of a precursor solution followed by annealing at $550^{\circ}C$ for 30 min. in air ambient. Specifically, the precursor solution was prepared by dissolving non-toxic $FeCl_3$ as an Fe source in highly versatile dimethyl sulfoxide(DMSO) as a solvent. The as-deposited and annealed thin films were characterized for their morphological, structural and optical properties using field-emission scanning electron microscopy(FE-SEM), X-ray diffraction(XRD), X-ray photoelectron spectroscopy(XPS) and UV-Vis absorption spectroscopy. The photoelectrochemical performance of the precursor (${\alpha}-FeOOH$) and annealed (${\alpha}-Fe_2O_3$) films were characterized and it was found that the ${\alpha}-Fe_2O_3$ film exhibited an increased photocurrent density of ${\sim}0.78mA/cm^2$ at 1.23 V vs. RHE, which is about 3.4 times higher than that of the ${\alpha}-FeOOH$ films ($0.23mA/cm^2$ at 1.23 V vs. RHE). The improved performance can be attributed to the improved crystallinity and porosity of ${\alpha}-Fe_2O_3$ thin films after annealing treatment at higher temperatures. Detailed electrical characterization was further carried out to elucidate the enhanced PEC performance of ${\alpha}-Fe_2O_3$ thin films.

• Nuclear Engineering and Technology
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• 제20권2호
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• pp.105-111
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• 1988

과망간산염들, 즉 과망간산 칼륨, 과망간산 암모늄, 과망간산 바륨에서 망간의 중성자 포획으로 야기되는 화학적 효과를 고찰하였다. $^{55}$Mn(n, ｒ) $^{56}$ Mn 반응에서 생성된 방사성 망간 화학종, 즉 양이온 56/Mn, $^{56}$ MnO$_2$ 그리고 $^{56}$ MnO$_4$$^{-}$의 분포에 미치는 용제의 pH효과를 여러 가지 흡착제들과 이온교환체, 즉 제올이프 A-3, 카올리나이트, 알루미나, 이산화망간 그리고 도엑스 -50을 이용하여 고찰하였다. 카올리나이트와 알루미나에서 방사성 MnO$_4$$^{-}$의 분포가 대표적인 pH값인 4, 7 그리고 9 각각에서 다른흡착제와 이온교환체보다 높게 나타나며 동일한 흡착제일경우에는 pH 4 는 및 pH 9에서가 pH 7에서보다 높게 나타난다. $^{55}$Mn(n, ｒ) $^{56}$ Mn 반응에 의하여 과망간산염에서 생성된 반조망간원자들의 열-어니어링 거동 또한 고찰하였다. 열-어니어링에서 $^{56}$ MnO$_4$$^{-}$의 잔류율은 10$0^{\circ}C$ 및 13$0^{\circ}C$ 처리에서 온도가 높아질수록 증가함을 보였다. 망간염의 반조효과는 hot zone model로 설명하였다.

• 한국전기전자재료학회논문지
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• 제31권2호
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• pp.117-121
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• 2018

Perovskite solar cells have received increasing attention in recent years because of their outstanding power conversion efficiency (exceeding 22%). However, they typically contain toxic Pb, which is a limiting factor for industrialization. We focused on preparing Pb-free perovskite films of Ag-Bi-I trivalent compounds. Perovskite thin films with improved optical properties were obtained by applying an anti-solvent (toluene) washing technique during the spin coating of perovskites. In addition, the surface condition of the perovskite film was optimized using a multi-step thermal annealing treatment. Using the optimized process parameters, $AgBi_2I_7$ perovskite films with good absorption and improved planar surface topography (root mean square roughness decreased from 80 to 26 nm) were obtained. This study is expected to open up new possibilities for the development of high performance $AgBi_2I_7$ perovskite solar cells for applications in Pb-free energy conversion devices.

• Journal of Magnetics
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• 제6권1호
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• pp.23-26
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• 2001

Nano-crystalline hexaferrite $BaFe_{12}O_{19}$(BaM) thin films have been prepared by the sol-gel method. A solution of Ba-nitrate and Fe-nitrates was dissolved in solvent with the stoichiometric ratio Ba/Fe=1/10. Films were spin-coated onto $SiO_2$Si substrates, dried and then heated in air at various temperatures. In films prepared at a drying temperature $T_d=250^{\circ}C$ and a crystallizing temperature 650${\circ}C$, single-phase BaM was obtained. High coercivities were obtained in these nano-crystalline thin films, 4~5.5 kOe for hexaferrite. Polycrystalline BaM/$SiO_2$/Si(100) thin films were characterized by Rutherford backscattering (RBS), thermogravimetry (TGA), differential thermal analysis (DTA), x-ray diffraction (XRD), and vibrating sample magnetometry (VSM), as well as Fourier transform infrared spectroscopy (FTIR). The perpendicular coercivity $H_{C\bot}$ and in-plane coercivity $H_{CII}$ after annealing at 650${\circ}C$ for 2 hours were 4766 Oe and 4480 Oe, respectively, at room temperature, under a maximum applied field of 10 kOe.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2000년도 High Temperature Superconductivity Vol.X
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• pp.165-168
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• 2000

We fabricated ramp-edge Josephson junctions with barriers formed by interface treatments instead of epitaxially grown barrier layers. A low-dielectric Sr$_2$AlTaO$_6$(SAT) layer was used as an ion-milling mask as well as an insulating layer for the ramp-edge junctions. An ion-milled YBa$_2$Cu$_3$O$_{7-x}$ (YBCO)-edge surface was not exposed to solvent through all fabrication procedures. The barriers were produced by structural modification at the edge of the YBCO base electrode using high energy ion-beam treatment prior to deposition of the YBCO counter electrode. We investigated the effects of high energy ion-beam treatment, annealing, and counter electrode deposition temperature on the characteristics of the interface-controlled Josephson junctions. The junction parameters such as T$_c$, I$_c$c, R$_n$ were measured and discussed in relation to the barrier layer depending on the process parameters.

• 한국세라믹학회지
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• 제46권6호
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• pp.708-712
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• 2009

ITO films were achieved by sintering at $500{\sim}550{^{\circ}C}$. This was possible by inducing a seeding effect on an ITO sol by producing crystalline ITO nanoparticles in situ during heat treatment. Two kinds of ITO sols (named ITO-A and ITO-B) were prepared at 2.0 wt% from indium acetate and tin(IV) chloride in different mixed solvents. The ITO-A sol showed a high degree of crystallinity of ITO without any detectable Sn$O_2$ on XRD at $350{^{\circ}C}$/1 h, but the ITO-B sol showed a small amount of Sn$O_2$ even after annealing at $600{^{\circ}C}$/1 h. The 10 wt% ITO-A//ITO-B showed the sheet resistance of 3600$\Omega$/□, while the ITO-B sol alone showed 5200 $\Omega$/□ by sintering at $550{^{\circ}C}$ for 30 min. Processing parameters were studied by TG/DSC, XRD, SEM, sheet resistance, and visible transmittance.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 하계학술대회 논문집 C
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• pp.1498-1501
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• 1996

To evaluate insulating properties of polyimide thin film on high temperature over $100\;^{\circ}C$, polyimide film were prepared by electrophoretic deposition onto metal surface from nonaqueous emulsion. The emulsion is made by adding a solution of the resin to a precipitant, which is an organic liquid compeltely miscible with the solvent of the organic resin solution, but which does not dissolve the resin. The polyimide film obtained by annealing shows good insulation properties of 5.8 MV/cm at elevated temperature and breakdown strength of the film reveals thickness dependence.

• 한국자기공명학회논문지
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• 제19권1호
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• pp.1-10
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• 2015

Refinements with atomistic molecular dynamics (MD) simulation have contributed to improving the qualities of NMR structures. In most cases, the calculations with atomistic MD simulation for NMR structures employ generalized-Born implicit solvent model (GBIS) to take into accounts solvation effects. Developments in algorithms and computational capacities have ameliorated GBIS to approximate solvation effects that explicit solvents bring about. However, the quantitative comparison of NMR structures in the latest GBIS and explicit solvents is lacking. In this study, we report the direct comparison of NMR structures that atomistic MD simulation coupled with GBIS and water molecules refined. Two model proteins, GB1 and ubiquitin, were recalculated with experimental distance and torsion angle restraints, under a series of simulated annealing time steps. Whereas the root mean square deviations of the resulting structures were apparently similar, AMBER energies, the most favored regions in Ramachandran plot, and MolProbity clash scores witnessed that GBIS-refined structures had the better geometries. The outperformance by GBIS was distinct in the structure calculations with sparse experimental restraints. We show that the superiority stemmed, at least in parts, from the inclusion of all the pairs of non-bonded interactions. The shorter computational times with GBIS than those for explicit solvents makes GBIS a powerful method for improving structural qualities particularly under the conditions that experimental restraints are insufficient. We also propose a method to separate the native-like folds from non-violating diverged structures.

• 전자공학회논문지 IE
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• 제46권3호
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• pp.6-11
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• 2009

본 논문에서는 PAN/PVdF의 중량비에 따라 방사용액을 제조한 후 고전압으로 전기방사법에 의해 복합나노섬유를 제조하였다. 제조된 복합나노섬유는 PVdF의 함량이 감소할수록 섬유경이 감소하는 경향을 나타냈다. PAN/PVdF 복합나노섬유의 친수성 정도를 확인하기 위하여 접촉각을 측정한 결과 친유성인 PVdF의 함량이 증가할수록 물과의 접촉각이 증가하는 것을 확인할 수 있었다. 필터측정용 샘플을 $40^{\circ}C$의 온도, 85%의 습도에서 25시간 동안 방치한 후 성능을 평가한 결과 PAN/PVdF 복합나노섬유의 경우 99.95% 이상의 혜파(HEPA)급 및 99.999% 이상의 울파(ULPA)급 성능을 나타냄을 확인할 수 있었으며, 섬유경이 작을수록 필터 성능이 증가하는 것을 확인할 수 있었다. PAN/PVdF 복합나노섬유의 벌크 인장강도는 5-8MPa, 신도는 10-300% 범위였으며, PVdF의 함량이 증가할수록 강도와 신도가 동시에 증가하는 것을 알 수 있었다. PAN/PVdF 복합나노섬유를 $120^{\circ}C$에서 2시간 열처리한 시료의 인장강도는 3-8MPa정도였다. 인장강도의 경우는 열처리에 의해 거의 변화가 없었으며, 신도는 감소함을 알 수 있었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.388-388
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• 2010

In this study, Ferroelectric vinylidene fluoride-trifluoroethylene (VF2-TrFE) copolymer films were directly deposited on degenerated Si (n+, $0.002\;{\Omega}{\cdot}cm$) using by spin coating method. A 1~5 wt% diluted solution of purified vinylidene fluoride-trifluoroethylene (VF2:TrFE = 70:30) in a dimethylformamide (DMF) solvent were prepared and deposited on silicon wafers at a spin rate of 2000 ~ 4000 rpm for 2 ~ 30 seconds. After annealing in a vacuum ambient at 100 ~ $200^{\circ}C$ for 60 min, upper aluminum electrodes were deposited by vacuum evaporation for electrical measurement. X-ray diffraction results showed that the VF2-TrFE films on Si substrates had $\beta$-phase of copolymer structures. The capacitance on highly doped Si wafer showed hysteresis behavior like a butterfly shape and this result indicates clearly that the copolymer films have ferroelectric properties. The typical measured remnant polarization ($P_r$) and coercive filed ($E_c$) values were about $5.7\;{\mu}C/cm^2$ and 710 kV/em, respectively, in an applied electric field of ${\pm}$ 1.5 MV/em. The gate leakage current densities measured at room temperature was less than $7{\times}10^{-7}\; A/cm^2$ under a field of 1 MV/cm.