• 대한전기학회:학술대회논문집
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• 대한전기학회 2011년도 제42회 하계학술대회
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• pp.1453-1454
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• 2011

We have investigated the effect of silicon contents (0~0.4 molar ratios) on the performance of solution processed silicon-indium-zinc oxide (SIZO) thin-film transistors (TFTs). Despites its solution processed channel layer, low annealed temperature below $200^{\circ}C$ in air has been used for SIZO-TFTs. The $V_{th}$ is shifted from -4.04 to 5.15 V as increasing Si ratio in the SIZO-TFTs. The positive shift of $V_{th}$ as increasing Si contents in SIZO system indicates that Si suppresses the carrier generation in the active channel layer since $V_{th}$ is defined as the voltage required accumulating sufficient charge carriers to form a conductive channel path.

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권2호
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• pp.163-168
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• 2014

Bottom gate thin-film transistors were fabricated using solution processed IGZO channel layers with various gallium composition ratios that were annealed on a hot plate. Increasing the gallium ratio from 0.1 to 0.6 induced a threshold voltage shift in the electrical characteristics, whereas the molar ratio of In:Zn was fixed to 1:1. Among the devices, the IGZO-TFTs with gallium ratios of 0.4 and 0.5 exhibited suitable switching characteristics with low off-current and low SS values. The IGZO-TFTs prepared from IGZO films with a gallium ratio of 0.4 showed a mobility, on/off current ratio, threshold voltage, and subthreshold swing value of $0.1135cm^2/V{\cdot}s$, ${\sim}10^6$, 0.8 V, and 0.69 V/dec, respectively. IGZO-TFTs annealed at $300^{\circ}C$, $350^{\circ}C$, and $400^{\circ}C$ were also fabricated. Annealing at lower temperatures induced a positive shift in the threshold voltage and produced inferior electrical properties.

• 한국전기전자재료학회논문지
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• 제31권1호
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• pp.50-54
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• 2018

In this study, a femtosecond laser pre-annealing technology based on indium zinc oxide (IZO) thin-film transistors (TFTs) was investigated. We demonstrated a stable pre-annealing process to analyze the change in the surface structures of thin-films, and we improved the electrical performance. Furthermore, static and dynamic electrical characteristics of IZO TFTs with n-channel inverters were observed. To investigate the static and dynamic responses of our solution-processed IZO TFTs, simple resistor-load-type inverters were fabricated by connecting a $1-M{\Omega}$ resistor. The femtosecond laser pre-annealing process based on IZO TFTs showed good performance: a field-effect mobility of $3.75cm_2/Vs$, an $I_{on}/I_{off}$ ratio of $1.8{\times}10^5$, a threshold voltage of 1.13 V, and a subthreshold swing of 1.21 V/dec. Our IZO-TFT-based N-MOS inverter performed well at operating voltage, and therefore, is a good candidate for advanced logic circuits and display backplane.

• 한국전기전자재료학회논문지
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• 제34권2호
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• pp.115-120
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• 2021

In this study, composite transparent electrodes were fabricated either from a conductive polymer poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) or silver nanowire (AgNW). Three transparent electrodes such as PEDOT:PSS, PEDOT:PSS and AgNW mixture, and AgNW were fabricated. As for a transparent electrode, measured sheet resistance values were 89.6, 60.6 and 28.6 Ω/sq, and the transmittance values were 80.2, 82.0 and 83.8% while surface roughness (Rq) values were 4.1, 8.1, 20.4 nm for PEDOT:PSS, PEDOT:PSS and AgNW mixture, and AgNW, respectively. To verify the overall performance of these composite electrodes, we applied these electrodes to the top electrode of the solution-processed organic solar cells (OSCs). PEDOT:PSS provided the best performance with a fill factor (FF) of 51.2% and a photoconversion efficiency (PCE) of 2.2%, while traditional metal top electrode OSC provided FF of 60.5% and PCE of 3.1%.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.242-242
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• 2012

Transparent oxide semiconductors are increasingly becoming one of good candidates for high efficient channel materials of thin film transistors (TFTs) in large-area display industries. Compare to the conventional hydrogenated amorphous silicon channel layers, solution processed ZnO-TFTs can be simply fabricated at low temperature by just using a spin coating method without vacuum deposition, thus providing low manufacturing cost. Furthermore, solution based oxide TFT exhibits excellent transparency and enables to apply flexible devices. For this reason, this process has been attracting much attention as one fabrication method for oxide channel layer in thin-film transistors (TFTs). But, poor electrical characteristic of these solution based oxide materials still remains one of issuable problems due to oxygen vacancy formed by breaking weak chemical bonds during fabrication. These electrical properties are expected due to the generation of a large number of conducting carriers, resulting in huge electron scattering effect. Therefore, we study a novel technique to effectively improve the electron mobility by applying environmental annealing treatments with various gases to the solution based Li-doped ZnO TFTs. This technique was systematically designed to vary a different lithium ratio in order to confirm the electrical tendency of Li-doped ZnO TFTs. The observations of Scanning Electron Microscopy, Atomic Force Microscopy, and X-ray Photoelectron Spectroscopy were performed to investigate structural properties and elemental composition of our samples. In addition, I-V characteristics were carried out by using Keithley 4,200-Semiconductor Characterization System (4,200-SCS) with 4-probe system.

• 한국식품저장유통학회지
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• 제11권3호
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• pp.331-335
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• 2004

갈변과 미생물 증식으로 인해 저하되는 양상추의 품질을 향상시키기 위해 양상추를 최소처리하여 이들 품질저하요인을 제어하고자 하였다. 갈변억제방법으로는 다양한 침지수에 따른 화학적인 방법을 사용하였고, 미생물 증식억제방법으로는 염소처리법과 전기분해수 그리고 유기산 처리에 의한 방법을 사용하였다. 그 결과 양상추의 갈변은 색도에 있어서 ascorbic acid 1$\%$와 citric acid 1$\%$ 혼합침지수로 처리하였을 때 초기 L 값이 5$\%$ 수준에서 유의적으로 가장 높았고,a 값은 5$\%$ 수준에서 유의적으로 가장 낮게 나타나 갈변억제효과를 보였다. 갈변의 지표라 할 수 있는 PPO 활성에 있어서도 ascorbic acid 1%와 citric acid 1% 혼합침지수로 처리하였을 때 양상추의 PPO 활성이 대조구에 비해 1.5배 감소되었다. 미생물증식은 염소처리의 경우 차염소산 나트륨을200 ppm 농도로 처리한 침지수가 3 log cycle 감소시켰고, 전기분해수의 경우 무격막 처리수가 미생물 증식을 2 log cycle 억제하여 미생물 증식억제에 효과적임을 알 수 있었다 또한 갈변억제에 효과적인 ascorbic acid와 citric acid 처리수로 침지하였을 때 저장 2일째 까지는 미생물 증식이 없었으나 저장 4일째 대조구는 7 log cycle 인데 비해 처리구는 3 log cycle 로 나타나 강력하게 미생물 증식을 억제하는 것임을 알 수 있었다. 이상의 연구결과로 볼 때 양상추의 갈변과 미생물 증식에 있어서 ascorbic acid와 citric acid로 최소 가공하는 것이 가장 바람직하다고 생각된다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.411.1-411.1
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• 2016

In this study, we examined the effects of boron doping on the dielectric reliability of solution processed aluminum oxide ($Al_2O_3$). When boron is doped in aluminum oxide, the hysteresis reliability is improved from 0.5 to 0.4 V in comparison with the undoped aluminum oxide. And the accumulation capacitance is increased when boron was doped, which implying the reduction of the thickness of dielectric film. The improved dielectric reliability of boron-doped aluminum oxide is originated from the small ionic radius of boron ion and the stronger bonding strength between boron and oxygen ions than that of between aluminum and oxygen ions. Strong boron-oxygen ion bonding in aluminum oxide results dielectric film denser and thinner. The leakage current of aluminum oxide also reduced when boron was doped in aluminum oxide.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2011년도 제42회 하계학술대회
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• pp.1477-1478
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• 2011

Solution processed zinc tin oxide (ZTO) thin films were studied using a spin coating for the fabrication of thin film transistors and simple circuits. The solution processed thin film transistors (W/L = 100/10 ${\mu}m$) have the average saturation mobility of 1.9 $cm^2$/Vs, threshold voltage of 20 V, and subthreshold slope of 0.5 V/decade. The dc characteristics of an inverter with $W_{load}=100\;{\mu}m$ and $W_{drive}=10\;{\mu}m$, measured under votage supply of $V_{DD}$ = +50 V. The inverter beta ratio is 20 ($R=(W_{drived}/L_{drive})/(W_{load}/L_{load})=20$) and $gain_{max}$ is 2. The characteristics of an oscillator were measured under voltage supply of $V_{DD}$ = +60 V.

• 한국전기전자재료학회논문지
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• 제22권11호
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• pp.974-979
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• 2009

We studied solution-processed single-layered phosphorescent organic light-emitting diodes (PHOLEDs), doped with ionic salt and treated with simultaneous electrical and thermal annealing. Because the simultaneous annealing causes the accumulation of salt ions at the electrode surfaces, the energy levels of the organic molecules are bent by the electric fields due to the adsorbed ions, i.e., the simultaneous annealing can induce the proper formation of an ionic p-i-n structure. As a result, an ionic p-i-n PHOLED with a peak luminescence of over ${\sim}35,000\;cd/m^2$ and efficiency of 27 cd/A was achieved through increased and balanced carrier-injections.

• Preventive Nutrition and Food Science
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• 제18권4호
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• pp.292-295
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• 2013

Fermented whey solution presenting bifidogenic growth stimulation (BGS) activity was processed as prototypes such as sterilized fermented whey (SFW), spray-dried fermented whey (SDFW), and freeze-dried fermented whey (FDFW) and their BGS activities were compared. In optical density ($OD_{600}$) test, the BGS activity of three prototypes, which showed similar activities, were significantly different with non-fermented whey solution adjusted to pH 4.5 as a control (P<0.05). In viable cell count test, SDFW had the most positive influence than other prototypes on the BGS activity even though the difference was not significant. However, the activities of all prototypes were significantly different than the negative control (no addition). These results indicate that the processed prototypes of fermented whey solution show BGS activities and might be commercialized, with further evidences, in animal or human studies.