Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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Zinc tin oxide thin film transistors and simple circuits using a solution process

용액공정을 이용한 zinc tin oxide 박막 트렌지스터와 회로제작에 관한 연구

  • Heo, Jae-Sang (Convergence Materials & Displays Laboratory, Chonbuk National University) ;
  • Kim, Young-Hoon (Flexible Display Research Center, Korea Electronics Technology Institutes) ;
  • Park, Sung-Kyu (Convergence Materials & Displays Laboratory, Chonbuk National University)
  • 허재상 (융복합 전자소재/소자 연구실, 전북대학교) ;
  • 김영훈 (전자부품 연구원 플렉서블 디스플레이 연구센터) ;
  • 박성규 (융복합 전자소재/소자 연구실, 전북대학교)
  • Published : 2011.07.20
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Abstract

Solution processed zinc tin oxide (ZTO) thin films were studied using a spin coating for the fabrication of thin film transistors and simple circuits. The solution processed thin film transistors (W/L = 100/10 ${\mu}m$) have the average saturation mobility of 1.9 $cm^2$/Vs, threshold voltage of 20 V, and subthreshold slope of 0.5 V/decade. The dc characteristics of an inverter with $W_{load}=100\;{\mu}m$ and $W_{drive}=10\;{\mu}m$, measured under votage supply of $V_{DD}$ = +50 V. The inverter beta ratio is 20 ($R=(W_{drived}/L_{drive})/(W_{load}/L_{load})=20$) and $gain_{max}$ is 2. The characteristics of an oscillator were measured under voltage supply of $V_{DD}$ = +60 V.

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