• Journal of the Institute of Electronics Engineers of Korea SC
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• v.41 no.6
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• pp.17-25
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• 2004

In this paper, we propose a new small swing domino logic for low-power consumption. To reduce the power consumption, both the precharge node and the output node swing the range from 0 to $V_{REF}$- $V_{THN}$, where $V_{REF}$=VDD-n $V_{THN}$ (n=1, 2, and 3). This can be done by adding the inverter structure on domino logic that allows a full swing or a small swing on its input terminal without leakage current. Compared to previous works, the proposed structure can save the power consumption of more than 30% for n=0, 1, 2, and 3 in the equation of $V_{REF}$=VDD-n $V_{THN}$. A multiplier applying the proposed domino logic has been designed and fabricated using a 0.35-${\mu}{\textrm}{m}$ n-well CMOS process under 3.3-V supply voltage. Compared with other previous works, it shows a 30% power reduction and a better feature in power-delay product.lay product.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.9
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• pp.54-58
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• 2007

Development of high performance LTPS TFTs contributed to open up new SOP technology with various digital circuits integrated in display panels. This work introduces the current mode logic(CML) gate design method with which one can replace slow CMOS logic gates. The CML inverter exhibited small logic swing, fast response with high power consumption. But the power consumption became compatible with CMOS gates at higher clock speed. Due to small current values in CML, layout area is smaller than the CMOS counterpart even though CML uses larger number of devices. CML exhibited higher noise immunity thanks to its non-inverting and inverting outputs. Multi-input NAND/AND and NOR/OR gates were implemented by the same circuit architecture with different input confirugation. Same holds for MUX and XNOR/XOR CML gates. We concluded that the CML gates can be designed with few simple circuits and they can improve power consumption, chip area, and speed of operation.

• JSTS:Journal of Semiconductor Technology and Science
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• v.10 no.3
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• pp.176- 184
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• 2010

A low-power inductorless 1:4 DEMUX and a 4:1 MUX for a 90 nm CMOS are presented. The DEMUX can be operated at a speed of 25 Gb/s with the power supply voltage of 1.05 V, and the power consumption is 8.9 mW. The area of the DEMUX core is $29\;{\times}\;40\;{\mu}m^2$. The operation speed of the 4:1 MUX is 13 Gb/s at a power supply voltage of 1.2 V, and the power consumption is 4 mW. The area of the MUX core is $30\;{\times}\;18\;{\mu}m^2$. The MUX/DEMUX mainly consists of differential pseudo-NMOS. In these MUX/DEMUX circuits, logic swing is nearly rail-to-rail, and a low $V_{dd}$. The component circuit is more scalable than a CML circuit, which is commonly used in a high-performance MUX/DEMUX. These MUX/DEMUX circuits are compatible with conventional CMOS logic circuit, and it can be directly connected to CMOS logic gates without logic level conversion. Furthermore, the circuits are useful for core-to-core interconnection in the system LSI or chip-to-chip communication within a multi-chip module, because of its low power, small footprint, and reasonable operation speed.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.3 s.357
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• pp.26-34
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• 2007

This Paper describes a chip design technique for body composition analyzer based on the BIA (Bioelectrical Impedance Analysis) method. All the functions of signal forcing circuits to the body, signal detecting circuits from the body, Micom, SRAM and EEPROMS are integrated in one chip. Especially, multi-frequency detecting method can be applied with selective band pass filter (BPF), which is designed in weak inversion region for low power consumption. In addition new full wave rectifier (FWR) is also proposed with differential difference amplifier (DDA) for high performance (small die area low power consumption, rail-to-rail output swing). The prototype chip is implemented with 0.35um CMOS technology and shows the power dissipation of 6 mW at the supply voltage of 3.3V. The die area of prototype chip is $5mm\times5mm$.