• 제목/요약/키워드: small signal parameters

검색결과 199건 처리시간 0.028초

MHEMT 소자의 DC/RF 특성에 대한 시뮬레이션 연구 (Simulation Study on the DC/RF Characteristics of MHEMTs)

  • 손명식
    • 한국진공학회지
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    • 제20권5호
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    • pp.345-355
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    • 2011
  • GaAs나 InP 기반의 high electron mobility transistor (HEMT) 소자들은 우수한 마이크로파 및 밀리미터파 주파수 특성 및 이에 따른 우수한 저잡음 특성을 가지고 있다. GaAs 기판 위에 점진적으로 성장된 메타몰픽(Metamorphic) HEMTs (MHEMTs)는 InP 기판 위에 성정한 HEMT에 비해 비용 측면에서 커다란 장점을 가지고 있다. 본 논문에서는 이러한 MHEMT의 DC/RF 소신호 특성을 예측하기 위하여 InAlAs/InGaAs/GaAs MHEMT 소자들의 DC/RF 소신호 주파수 특성을 시뮬레이션하였다. 2차원 소자 시뮬레이터의 hydrodynamic 전송 모델을 사용하여 $In_{0.52}Al_{0.48}As/In_{0.53}Ga_{0.47}As$ 이종접합 구조를 갖는 제작된 0.1-${\mu}m$ ${\Gamma}$-게이트 MHEMT 소자에 대하여 파라미터 보정 작업을 수행한 후, MHEMT 소자들에 대해 DC 특성 및 RF 소신호 주파수 특성을 시뮬레이션하고 실험 데이터와 비교 분석하였다. 또한, 게이트 리세스 구조에 따른 MHEMT 소자들의 DC/RF 특성을 시뮬레이션하고 비교 분석하였다.

The Effects of Spinopelvic Parameters and Paraspinal Muscle Degeneration on S1 Screw Loosening

  • Kim, Jin-Bum;Park, Seung-Won;Lee, Young-Seok;Nam, Taek-Kyun;Park, Yong-Sook;Kim, Young-Baeg
    • Journal of Korean Neurosurgical Society
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    • 제58권4호
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    • pp.357-362
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    • 2015
  • Objective : To investigate risk factors for S1 screw loosening after lumbosacral fusion, including spinopelvic parameters and paraspinal muscles. Methods : We studied with 156 patients with degenerative lumbar disease who underwent lumbosacral interbody fusion and pedicle screw fixation including the level of L5-S1 between 2005 and 2012. The patients were divided into loosening and non-loosening groups. Screw loosening was defined as a halo sign larger than 1 mm around a screw. We checked cross sectional area of paraspinal muscles, mean signal intensity of the muscles on T2 weight MRI as a degree of fatty degeneration, spinopelvic parameters, bone mineral density, number of fusion level, and the characteristic of S1 screw. Results : Twenty seven patients showed S1 screw loosening, which is 24.4% of total. The mean duration for S1 screw loosening was $7.3{\pm}4.1$ months after surgery. Statistically significant risk factors were increased age, poor BMD, 3 or more fusion levels (p<0.05). Among spinopelvic parameters, a high pelvic incidence (p<0.01), a greater difference between pelvic incidence and lumbar lordotic angle preoperatively (p<0.01) and postoperatively (p<0.05). Smaller cross-sectional area and high T2 signal intensity in both multifidus and erector spinae muscles were also significant muscular risk factors (p<0.05). Small converging angle (p<0.001) and short intraosseous length (p<0.05) of S1 screw were significant screw related risk factors (p<0.05). Conclusion : In addition to well known risk factors, spinopelvic parameters and the degeneration of paraspinal muscles also showed significant effects on the S1 screw loosening.

An Economic-Statistical Design of Moving Average Control Charts

  • Yu, Fong-Jung;Chin, Hsiang;Huang, Hsiao Wei
    • International Journal of Quality Innovation
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    • 제7권3호
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    • pp.107-115
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    • 2006
  • Control charts are important tools of statistical quality control. In 1956, Duncan first proposed the economic design of $\bar{x}-control$ charts to control normal process means and insure that the economic design control chart actually has a lower cost, compared with a Shewhart control chart. An moving average (MA) control chart is more effective than a Shewhart control chart in detecting small process shifts and is considered by some to be simpler to implement than the CUSUM. An economic design of MA control chart has also been proposed in 2005. The weaknesses to only the economic design are poor statistics because it dose not consider type I or type II errors and average time to signal when selecting design parameters for control chart. This paper provides a construction of an economic-statistical model to determine the optimal parameters of an MA control chart to improve economic design. A numerical example is employed to demonstrate the model's working and its sensitivity analysis is also provided.

Small-Signal Modeling of Gate-All-Around (GAA) Junctionless (JL) MOSFETs for Sub-millimeter Wave Applications

  • Lee, Jae-Sung;Cho, Seong-Jae;Park, Byung-Gook;Harris, James S. Jr.;Kang, In-Man
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제12권2호
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    • pp.230-239
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    • 2012
  • In this paper, we present the radio-frequency (RF) modeling for gate-all-around (GAA) junctionless (JL) MOSFETs with 30-nm channel length. The presented non-quasi-static (NQS) model has included the gate-bias-dependent components of the source and drain (S/D) resistances. RF characteristics of GAA junctionless MOSFETs have been obtained by 3-dimensional (3D) device simulation up to 1 THz. The modeling results were verified under bias conditions of linear region (VGS = 1 V, VDS = 0.5 V) and saturation region (VGS = VDS = 1 V). Under these conditions, the root-mean-square (RMS) modeling error of $Y_{22}$-parameters was calculated to be below 2.4%, which was reduced from a previous NQS modeling error of 10.2%.

딥스틱게이지형 소형 엔진오일열화감지센서의 시험결과 분석 (Analysis of Test Results for Small Dipstick-Gage-Type Engine-Oil-Deterioration-Detection Sensor)

  • 전상명
    • Tribology and Lubricants
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    • 제30권3호
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    • pp.156-167
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    • 2014
  • This paper presents the test results of small dipstick-gage-type engine-oil-deterioration-detection sensor. The measured sensor signal characteristics for the capacitance and temperature are analyzed. The engine oil deterioration condition correlates with the electrical property of the dielectric constant that comprised with physical properties such as TAN (Total Acid Number), TBN (Total Base Number) and viscosity. Several problems encontered during the test of the sensor system are improved. The results of vehicle tests show that the capacitance signal is stable after the engine stops. Therefore, the sensor should start measuring the parameters for monitoring the engine oil condition after the engine stops. The engine is considered to be in a stopped state if the difference between the maximum and minimum values of the oil capacitance measured every 1 min is below 0.02 pF. The key test results in this paper will help in the development of an engine oil change warning algorithm.

Performance Analysis of Three-Phase Phase-Locked Loops for Distorted and Unbalanced Grids

  • Li, Kai;Bo, An;Zheng, Hong;Sun, Ningbo
    • Journal of Power Electronics
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    • 제17권1호
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    • pp.262-271
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    • 2017
  • This paper studies the performances of five typical Phase-locked Loops (PLLs) for distorted and unbalanced grid, which are the Decoupled Double Synchronous Reference Frame PLL (DDSRF-PLL), Double Second-Order Generalized Integrator PLL (DSOGI-PLL), Double Second-Order Generalized Integrator Frequency-Lock Loop (DSOGI-FLL), Double Inverse Park Transformation PLL (DIPT-PLL) and Complex Coefficient Filter based PLL (CCF-PLL). Firstly, the principles of each method are meticulously analyzed and their unified small-signal models are proposed to reveal their interior relations and design control parameters. Then the performances are compared by simulations and experiments to investigate their dynamic and steady-state performances under the conditions of a grid voltage with a negative sequence component, a voltage drop and a frequency step. Finally, the merits and drawbacks of each PLL are given. The compared results provide a guide for the application of current control, low voltage ride through (LVRT), and unintentional islanding detection.

4H-SiC Planar MESFET for Microwave Power Device Applications

  • Na, Hoon-Joo;Jung, Sang-Yong;Moon, Jeong-Hyun;Yim, Jeong-Hyuk;Song, Ho-Keun;Lee, Jae-Bin;Kim, Hyeong-Joon
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제5권2호
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    • pp.113-119
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    • 2005
  • 4H-SiC planar MESFETs were fabricated using ion-implantation on semi-insulating substrate without recess gate etching. A modified RCA method was used to clean the substrate before each procedure. A thin, thermal oxide layer was grown to passivate the surface and then a thick field oxide was deposited by CVD. The fabricated MESFET showed good contact properties and DC/RF performances. The maximum oscillation frequency of 34 GHz and the cut-off frequency of 9.3 GHz were obtained. The power gain was 10.1 dB and the output power of 1.4 W was obtained for 1 mm-gate length device at 2 GHz. The fabricated MESFETs showed the charge trapping-free characteristics and were characterized by the extracted small-signal equivalent circuit parameters.

개선된 연속시간 Fully-Differential 전류모드 적분기를 이용한 3V CMOS 저역필터 설계 (Design of A 3V CMOS Lowpass Filter Using the Improved Continuous-Time Fully-Differential Current-Mode Integrator)

  • 최규훈;방준호;조성익
    • 한국통신학회논문지
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    • 제22권4호
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    • pp.685-695
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    • 1997
  • In this paper, a new CMOS continuous-time fully-differential current-mode integrator is proposed as a basic building block of the low-voltage high frequency current-mode active filter. The proposed integrator is composed of the CMOS complementary circuit which can extend transconductance of an integrator. Therefore, the unity gain frequency which is determined by a small-signal transconductance and a MOSFET gate capacitance can be expanded by the complementary transconductance of the proposed integrator. And also the magnitude of pole and zero are increased. The unity gain frequency of the proposed integrator is increased about two times larger than that of the conventional continuous-time fully-differential integrator with NMOS-gm. These results are verified by the small signal analysis and the SPICE simulation. As an application circuit of the proposed fully-differential current-mode integrator, the three-pole Chebyshev lowpass filter is designed using 0.8.$\mu$m CMOS processing parameters. SPICE simulation predicts a 3-dB bandwidth of 148MHz and power dissipation of 4.3mW/pole for the three-pole filter with 3-V power supply.

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초광대역 마이크로파 증폭기 설계를 위한 단순화한 GaAs MESFET 모델링 (A Simplified GaAs MESFET Modeling for the Design of Ultrabroad-Band Microwave Amplifiers)

  • 윤영철;김병철;안달;장익수
    • 대한전자공학회논문지
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    • 제26권9호
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    • pp.1308-1316
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    • 1989
  • A simplified 10-element GaAs MESFET equivalent circuit model has been presented which is suitable for the design of ultrabroad-band microwave small-signal amplification, the these circuit element values are extracted from measured S-parameters using complex-curve fitting algorithm. Packaged GaAs MESFET equivalent circuits are composed of intrinsic \ulcornermodel and several extrinsic elements at microwave frequencies, of which the largest effects are caused by package lead inductances. If these are eliminated from measured S-parameters, newly obtained S-parameters are closed to intrinsic \ulcornermodel, and the rest element values can be easily extracted. The modeling results applied to the packaged GaAs MESFET NE71083 are almost equal between the measure S-parameters and the mideled S-parameters within b 2% errors from DC to 8GHz, and errors are increased to \ulcorner% upto 12GHz wide bandwidth.

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직접 방사형 스피커의 비선형 고조파 왜곡 보상 제어기의 설계 (Controller design for compensation of nonlinear harmonic distortion in direct-radiator loudspeakers)

  • 김윤선;박영진
    • 제어로봇시스템학회:학술대회논문집
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    • 제어로봇시스템학회 1996년도 한국자동제어학술회의논문집(국내학술편); 포항공과대학교, 포항; 24-26 Oct. 1996
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    • pp.399-402
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    • 1996
  • The electrodynamic loudspeakers should have a wide dynamic range to reproduce various sound levels. When the input signal is small, the radiated sound from the loudspeaker is not so much distorted. However, for large input signal with low frequency component the radiated sound is significantly distorted due to the nonlinearities of the loudspeaker. The suspension, damping, and magnetic flux of loudspeaker are the main sources of the nonlinearity. Such electromechanical parameters related to harmonic distortion have been represented by a polynomial model for diaphragm displacement, while each of the polynomial coefficient is evaluated by using the principle of harmonic balance experimentally. Based on the polynomial model, we designed a compensator for nonlinear harmonic distortion of direct radiator loudspeaker. Than observer is used to estimate the displacement of the loudspeaker diaphragm, which is rather difficult to measure directly in the conventional setting. The usefulness of the designed compensator is demonstrated by numerical simulations. Simulation results show about 30db decrease at the second and third higher harmonic distortions. We carry out an experiment on speaker to verify designed controller and nonlinear observer.

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