• 제목/요약/키워드: slurry materials

검색결과 505건 처리시간 0.04초

연자성 복합체 후막용 슬러리 제조공정의 최적화 (Optimization of Slurry Preparation Process for Soft Magnetic Green Sheet)

  • 오세문;이창현;신효순;여동훈;김진호
    • 한국전기전자재료학회논문지
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    • 제28권12호
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    • pp.792-796
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    • 2015
  • With high integration of electronic components, power inductors are also miniaturized. Recently, thick film processes for small size power inductors were developed and commercialized. However, the thick film process to prepare soft magnetic green sheets was not reported enough. In this study, we used Fe-Si magnetic and CIP (carbonyl iron powders) as starting materials to lead to a bimodal particle size distribution in the sheet. We proposed a newly developed 'Modified slurry preparation process' to get well dispersed condition even at high solid contents. Using the new process, it was possible to prepare a well dispersed slurry over 70 vol% of solid. BYK-103 was better than BYK-111 as dispersant in this slurry and the optimum amount was 0.6 wt%. The optimized slurry was formed into a sheet by tape casting process and then the sheet was laminated. We conformed that small size powder, large size powder, and epoxy resin were well dispersed in the green sheet.

Computer Simulation for Die Filling Behavior of Semi-Solid Slurry of Mg Alloy

  • Lee, Dock-Young;Moon, Jung-Hwa;Seok, Hyun-Kwang;Kim, Sung-Bin;Kim, Ki-Bae
    • 한국주조공학회지
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    • 제27권1호
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    • pp.31-35
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    • 2007
  • 본 연구에서는 Mg합금의 반응고성형 공정기술을 개발하기 위하여 여러 가지 전단속도와 냉각속도에 따른 Mg합금의 점도와 딕소트러픽 거동을 분석하였으며, 이를 전산모사연구와 비교 검토하였다. 전산모사연구에서는 미세조직과 공정변수를 고려한 반응고 슬러리의 유변학적 거동을 분석하였다. 반응고 온도영역에서의 Mg합금(AZ91D) 슬러리의 점도는 고상율에 따라 지수함수적으로 증가하였으며, 전단속도가 증가하면 감소하는 경향을 나타났다. Mg합금 슬러리의 유변학적 거동을 정확하게 분석하기 위하여 Carreau 모델을 사용하여 ANYCAST 프로그램에서 고압다이캐스팅용 금형으로의 Mg합금 반응고 슬러리의 충진거동을 모사하였다. 전산모사된 결과는 동일한 조건에서의 실제 실험결과와 잘 일치하였다.

첨가제가 Ru CMP slurry의 안정화에 미치는 영향 (Effect of additives on the stability of Ru CMP slurry)

  • 조병권;김인권;강봉균;박진구
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 추계학술대회 논문집
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    • pp.50-50
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    • 2007
  • 최근 DRAM 소자 내에서 Ruthenium (Ru) 은 높은 화학적 안정성, 누설전류에 대한 높은 저항성, 고유전체와의 높은 안정성등과 같은 특성으로 인해 금속층-유전막(insulator)-금속층 캐패시터에 대한 하부전극으로 각광받고 있다. 일반적으로 Ru은 화학적으로 매우 안정하여 습식 식각으로 제거하기 어려우며, 이로인해 건식 식각을 이용하여 Ru을 제거하는 것이 널리 통용되고 있다. 하지만 칵 캐패시터의 분리를 위해 Ru을 건식 식각할 경우, 유독한 $Ru0_4$ 가스가 발생할 수 있으며 Ru 하부전극의 탈균일한 표면과 몰드 산화막의 손실을 유발할 수 있다. 이로인해 각 캐패시터간의 분리와 평탄화를 위해 CMP 공정이 도입되게 되었다. 이러한 CMP 공정에 공급되는 슬러리에는 부식액, pH 적정제, 연마입자등이 첨가되는데 이때 연마입자가 응집하여 슬러리의 분산 안정성 저하에 영향을 줄 수 있다. 그리하여 본 연구에서는 Ru CMP Slurry에서의 surfactant와 같은 첨가제에 따른 zeta potential, particle size, sedimentation의 분석을 통해 slurry 안정성에 대란 영향을 살펴보았다. 또한 선택된 surfactant가 첨가된 Ru CMP Slurry를 제조하여 Ru의 removal rate와 TEOS에 대한 selectivity를 측정해 보았다.

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CMP 공정에서 슬러리와 웨이퍼 형상이 SiC 웨이퍼 표면품질에 미치는 영향 (The Effect of Slurry and Wafer Morphology on the SiC Wafer Surface Quality in CMP Process)

  • 박종휘;양우성;정정영;이상일;박미선;이원재;김재육;이상돈;김지혜
    • 한국세라믹학회지
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    • 제48권4호
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    • pp.312-315
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    • 2011
  • The effect of slurry composition and wafer flatness on a material removal rate (MRR) and resulting surface roughness which are evaluation parameters to determine the CMP characteristics of the on-axis 6H-SiC substrate were systematically investigated. 2-inch SiC wafers were fabricated from the ingot grown by a conventional physical vapor transport (PVT) method were used for this study. The SiC substrate after the CMP process using slurry added oxidizers into slurry consisted of KOH-based colloidal silica and nano-size diamond particle exhibited the significant MRR value and a fine surface without any surface damages. SiC wafers with high bow value after the CMP process exhibited large variation in surface roughness value compared to wafer with low bow value. The CMPprocessed SiC wafer having a low bow value of 1im was observed to result in the Root-mean-square height (RMS) value of 2.747 A and the mean height (Ra) value of 2.147 A.

Polishing Mechanism of TEOS-CMP with High-temperature Slurry by Surface Analysis

  • Kim, Nam-Hoon;Seo, Yong-Jin;Ko, Pil-Ju;Lee, Woo-Sun
    • Transactions on Electrical and Electronic Materials
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    • 제6권4호
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    • pp.164-168
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    • 2005
  • Effects of high-temperature slurry were investigated on the chemical mechanical polishing (CMP) performance of tetra-ethyl ortho-silicate (TEOS) film with silica and ceria slurries by the surface analysis of X-ray photoelectron spectroscopy (XPS). The pH showed a slight tendency to decrease with increasing slurry temperature, which means that the hydroxyl $(OH^-)$ groups increased in slurry as the slurry temperature increased and then they diffused into the TEOS film. The surface of TEOS film became hydro-carbonated by the diffused hydroxyl groups. The hydro-carbonated surface of TEOS film could be removed more easily. Consequently, the removal rate of TEOS film improved dramatically with increasing slurry temperature.

모델 데칸트를 이용한 고농도 슬러리상태 양돈폐수의 고액분리특성에 관한 연구 (A Study on the Solid-Liquid Separation Characteristics for Highly Concentrated Swine Wastewater Using Model Decanter)

  • 나은수;강호
    • 연구논문집
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    • 통권30호
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    • pp.67-77
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    • 2000
  • This study was performed to investigate the characteristics and performance of model Decanter for separating swine wastewater to solid and liquid which is slurry state with 12.6% TS. Swine wastewater of the slurry tank was pumped into model Decanter which capacity was $2m^3$/hr in 10% TS Slurry inside of bowl was separated to solid-liquid by centrifugal acceleration. Sampling was done in the section of slurry feed pipe, supernatant outflow pipe, cake discharge pipe. After solid-liquid separation TS, $COD_cr$ and slurry volume reduction effect represented 38%, 40%, 19.6% respectively. Relation factor of model Decanter operation slurry concentration, optimum retention time of slurry, overflow velocity of supernatant, supernatant concentration, sludge removal rate etc. Optimal operation conditions can be set and evaluated efficiency based on the experimental results in the case of Decanter adopted for solid-liquid separation in highly concentrated swine wastewater.

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Blanket Wafer의 CMP특성에 Slurry가 미치는 영향 (Effect of slurry on CMP characteristics of Blanket Wafer)

  • 김경준;정해도
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 1996년도 추계학술대회 논문집
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    • pp.172-176
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    • 1996
  • The rapid structural change of ULSI chip includes minimum features, multilevel interconnection and large diameter wafers. Demands for the advanced chip structure necessitates the development of enhanced deposition, etching and planarization techniques. Planarization refers to a process that make rugged surfaces flat and uniform. One of the emerging technologies for planarization is chemical mechanical polishing(CMP). Chemical and mechanical removal actions occur during CMP, and both appear to be closely interrelated. The purpose of this study is the optimal application of the slurry to the various types of device materials during CMP. We investigates the effect of slurry on CMP characteristics for thermal oxide and sputtered Al blanket wafers. Results from the polishing rate and the uniformity of residual film include mechanical and chemical reactions between several set of slurry and work material.

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Research on Performance of LSM Coating on Interconnect Materials for SOFCs

  • Zhai, Huijuan;Guan, Wanbing;Li, Zhi;Xu, Cheng;Wang, Wei Guo
    • 한국세라믹학회지
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    • 제45권12호
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    • pp.777-781
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    • 2008
  • Experiments were conducted using SUS430 and Crofer 22 APU steels coated by LSM using plasma spray and slurry spray methods, respectively. High-temperature conductivity and oxidation resistance were investigated. For comparison, SUS430 and Crofer 22 APU without LSM coating were also investigated and coefficient of thermal expansion (CTE) was measured. The results show that the materials without LSM coating exhibit almost the same CTE as YSZ electrolyte in a range of temperatures of $550{\sim}850^{\circ}C$. When coated with LSM, the oxidation rate of the steels decreases by $30{\sim}40%$ using slurry spray and by $10{\sim}30%$ using plasma spray whereas the steels using plasma spray have a better high-temperature conductivity than the steels using slurry spray. It is thus concluded that the LSM coating has a limited effect on increasing high-temperature conductivity while it can effectively reduce the oxidation of the steels.