• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
• /
• v.21 no.5
• /
• pp.60-67
• /
• 2007

In this paper, a simulation method of the internal winding fault is proposed to calculate winding current and electromagnetic force in a distribution power transformer by suing FEM program. The model of the transformer is a single phase, 60[Hz], 1[MVA], 22.9[kV]/220[V], cable-type winding. The short-circuit current and electromagnetic force are calculated by FEM(Finite Element Method) program(Flux2D) and the results we verified with theoretical formula and PSPICE program. The simulation results are fairly good agreement with the other verified methods within 5[%] error rate. The turn-to-turn short-circuit current is 500 times of the rated current and the electromagnetic force is about $20{\sim}200times$. The method presented in this study may serve as one of the useful tools in the electromagnetic force analysis of the transformer winding behavior under the short circuit condition for design of the structure.

• Korean Journal of Materials Research
• /
• v.16 no.3
• /
• pp.163-167
• /
• 2006

The transition of europium-doped gadolinium oxide phosphor to gadolinium borate phosphor with the concentration of boron in the spray pyrolysis was investigated. The particles prepared from spray solution below 10 wt% boric acid of prepared phosphor had crystal structure of $Gd_2O_3:Eu$ phosphor, in which the crystallinity of the particles decreased with increasing the boron concentration. A single phase $GdBO_3:Eu$ phosphor particles were prepared from spray solution above 50 wt% boric acid of prepared phosphor. The phosphor particles prepared from spray solution with 20 wt% boric acid of prepared phosphor had no XRD peaks of $Gd_2O_3:Eu$ and $GdBO_3:Eu$ Therefore the phosphor particles prepared from spray solution with 20 wt% boric acid of prepared phosphor had the lowest photoluminescence intensity under ultraviolet and vacuum ultraviolet. $GdBO_3:Eu$ and $Gd_2O_3:Eu$ phosphor particles prepared from spray solutions with proper concentrations of boric acid had good photoluminescence intensity under vacuum ultraviolet. The morphology of the phosphor particles were strongly affected by the concentrations of boric acid added into spray solution.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.20 no.12
• /
• pp.1316-1324
• /
• 2009

In this paper, cross-aperture coupled microstrip circular polarization antenna is proposed for 5.8 GHz WLAN(Wireless Local Area Network). A single antenna consists of square patch and slots are located in series feed line with $\lambda_g$/4 phase different which make current direction maximum and minimum repeatedly to generate RHCP(Right Handed Circularly Polarization). We are proposed new structure that removed the section which intersected at a right angle and were composed to four separated slots. The proposed cross slots reduce back lobe of radiation pattern and improve antenna gain. Impedance bandwidth of the manufactured $2\times2$ array antenna is from 5.67 to 5.95 GHz and the maximum radiation gain is 10.59 dBi.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.25 no.3
• /
• pp.198-203
• /
• 2012

In this study, $[Li_{0.04}(Na_{0.5}K_{0.5})_{0.96}](Nb_{0.86}Ta_{0.10}Sb_{0.04})O_3+xSrO$ (x=0, 0.0025, 0.005, 0.0075) ceramics were synthesized by the conventional mixed oxide method. The X-ray diffraction patterns demonstrated that ceramics possessed single perovskite structure. The SEM images indicate that microstructure can be obviously affected by a small amount of added SrO. The phase transition temperature tetragonal-cubic($T_c$) and orthorhombic-tetragonal($T_{o-t}$) shifts downward and upward with the increase of Sr addition, respectively. The excellent piezoelectric properties of $d_{33}=170[pC/N]$, $k_p=0.37$, $Q_m=64.12$, $T_{o-t}=153^{\circ}C$ and $T_c=370^{\circ}C$ were obtained from the 0.25 mol% Sr added ceramics sintered at $1,120^{\circ}C$ for 1 h.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.24 no.2
• /
• pp.162-165
• /
• 2011

In this paper, $CuInSe_2$ thin film was prepared by use of the co-evaporation method with the variation of the substrate temperature in the range of $100^{\circ}C$ to $400^{\circ}C$. The film was annealed at $300^{\circ}C$ for an hour in a vacuum chamber at $3{\times}10-4$ Pa. After annealing, the thin film prepared at the substrate temperatures of $100^{\circ}C$ and $200^{\circ}C$ was observed. The XRD (x-ray diffraction) pattern of sample prepared at $100^{\circ}C$ showed the single phase formation of $CuInSe_2$. However, at $200^{\circ}C$, there was no apparent difference in the XRD pattern except a variation in the intensity of the peak. As the annealing treatment of substrate improved the crystal structure of the film, it affected to the increase of an electron mobility, resulted in an increase in conductivity and a decrease in resistance. As a results, when the substrate temperature was at $200^{\circ}C$ and $300^{\circ}C$, the sheet resistance was 1.534 $\Omega/\Box$ and 1.554 $\Omega/\Box$, respectively, and the resistivity was $1.76{\times}10-6\;{\Omega}{\cdot}cm$ and $1.7210-6\;{\Omega}{\cdot}cm$, respectively. From the absorption spectrum measurements, there was no variation between the before and after annealing conductions. And it means that the annealing step does not affect the thickness of the thin film.

• Journal of Energy Engineering
• /
• v.22 no.1
• /
• pp.28-37
• /
• 2013

Stirred tank is widely used in various industries for mixing operations and chemical reactions for single- or multi-phase fluid systems. For designing agitator of high performance, quantity data of internal flow characteristics influenced by mixing performance are definitely confirmed but quantity analysis about the transient flow characteristics of complicate structure is recognized as difficult problem in the present. In this study, two models of commercial CFD code Fluent 6.3 used to propose suitable for the tank analysis. Agitation of Stirred tank is analyzed using a mixed model and the flow in the stirred tank is analyzed using a standard k-${\varepsilon}$ model. Multiple reference frame(MRF) and Sliding mesh(SM), the analysis techniques were used For compare a result of CFD with a visualization experiment result, to grasp internal flow and mixing characteristic in stirred tank and to present fundamental analysis method.

• Journal of Korean Ophthalmic Optics Society
• /
• v.8 no.2
• /
• pp.25-29
• /
• 2003

Nickel-ferrite $Ni_xFe_{3-x}O_4$ thin films with several composition for Ni on glass substrate was prepared by ferrite plating method in order to make sunglass which cut off ultraviolet and shield electromagnetic field. It has single phase of polycrystalline spinel structure and has gloss as mirror and has high hardness which is no scratch while scraping by using nail. The transmittance of nickel-ferrite thin film is lowered to zero below 400 nm manifestly. And it shows that the nickel-ferrite thin film in nickel composition rate x = 0.09 was most cut oil ultraviolet when compared with goods of other company in the cut off effect of ultraviolet. Therefore, sunglasses coated with $Ni_xFe_{3-x}O_4$ thin film can be used in removing ultraviolet and electromagnetic field.

• Current Photovoltaic Research
• /
• v.8 no.1
• /
• pp.33-38
• /
• 2020

Single-phased SnS thin films have been prepared by RF magnetron sputtering at various deposition pressures. The effect of deposition pressure on the structural and optical properties of polycrystalline SnS thin films was studied using X-ray diffraction (XRD), field-emission scanning electron microscopy (FE-SEM), X-ray photoelectron spectroscopy (XPS) and ultraviolet-visible-near infrared (UV-Vis-NIR) spectrophotometer. The XRD analysis revealed the orthorhombic structure of the SnS thin films oriented along the (111) plane direction. As the deposition pressure was increased from 5 mTorr to 15 mTorr, the intensity of the peak on the (111) plane increased, and the intensity decreased under the condition of 20 mTorr. The binding energy difference at the Sn 3d_5/2 and S 2p_3/2 core levels was about 324.5 eV, indicating that the SnS thin film was prepared as a pure Sn-S phase. The optical properties of the SnS thin films indicate the presence of direct allowed transitions with corresponding energy band gap in the rang 1.47-1.57 eV.

• Korean Journal of Materials Research
• /
• v.14 no.10
• /
• pp.688-695
• /
• 2004

The capacitor contact barrier(CCB) layers have been introduced in the FeRAM integration to prevent the Pt/Al reaction during the back-end processes. Therefore, the interdiffusion and intermetallic formation in $Pt(1500{\AA})/Al(3000{\AA})$ film stacks were investigated over the annealing temperature range of $100\sim500^{\circ}C$. The interdiffusion in Pt/Al interface started at $300^{\circ}C$ and the stack was completlely intermixed after annealing over $400^{\circ}C$ in nitrogen ambient for 1 hour. Both XRD and SBM analyses revealed that the Pt/Al interdiffusion formed a single phase of $RtAl_2$ intermetallic compound. On the other hand, in the presence of TiN($1000{\AA}$) barrier layer at the Pt/Al interface, the intermetallic formation was completely suppressed even after the annealing at $500^{\circ}C$. These were in good agreement with the predicted effect of the TiN diffusion barrier layer. But the conventional TiN CCB layer could not perfectly block the Pt/Al reaction during the back-end processes of the FeRAM integration with the maximum annealing temperature of $420^{\circ}C$. The difference in the TiN barrier properties could be explained by the voids generated on the Pt electrode surface during the integration. The voids were acted as the starting point of the Pt/Al reaction in real FeRAM structure.

• Journal of the Korean Magnetics Society
• /
• v.11 no.4
• /
• pp.168-172
• /
• 2001

Co-Zn ferrite thin films grown on thermally oxidized silicon wafers were fabricated by a sol-gel method. Magnetic and structural properties of Co-Zn thin films were investigated by using x-ray diffractometer (XRD), atomic force microscopy (AFM), auger electron spectroscopy (AES) and a vibrating sample magnetometer (VSM). Co-Zn ferrite thin films annealed at 400 $^{\circ}C$ presented have only a single phase spinel structure without any preferred crystallite orientation. Their surface roughness of Co-Zn ferrite thin films was shown as less than 3 nm and the grain size was about 40 nm for annealing temperatures over 600 $^{\circ}C$. A moderate saturation magnetization of Co-Zn ferrite thin films for recording media was obtained in this study and there is no significant difference of their magnetic property with those external fields of parallel and perpendicular to planes of the films. The maximum value of the coercivity was obtained as 1,900 Oe for Co-Zn ferrite thin film annealed at 600 $^{\circ}C$.