• Proceedings of the Korean Magnestics Society Conference
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• 2000.09a
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• pp.411-412
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• 2000

• Proceedings of the Korean Magnestics Society Conference
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• 2016.11a
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• pp.75-75
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• 2016

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1103-1107
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• 2005

Single-crystal silicon thin films on glass (SOG) and on fused-quartz (SOQ) were prepared using wafer bonding and hydrogen-induced layer transfer. Thinfilm transistors (TFTs) were subsequently fabricated. The high-temperature processed SOQ TFTs show better device performance than the low-temperature processed SOG TFTs. Tensile and compressive strain was measured respectively on SOQ and SOG. Consistent with the tensile strain, enhanced electron effective mobility was measured on the SOQ TFTs.

• Proceedings of the Korean Magnestics Society Conference
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• 2010.06a
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• pp.96-96
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• 2010

We report the proper resistance-area products in the single crystalline bcc CoFe/MgO tunnel contact on nondegenerate n-Ge desirable for efficient spin injection and detection at room temperature. The electric properties of the crystalline CoFe(5 nm)/MgO(1.5,2.0,2.5 nm)/n-Ge(001) tunnel contacts have been investigated by I-V-T and C-V measurements. Interestingly, the tunnel contact with the 2-nm MgO exhibits the ohmic behavior with low resistance-area products, satisfying the theoretical conditions required for significant spin injection and detection. This result is ascribed to the presence of MgO layer between CoFe and n-Ge, enhancing the Schottky pinning parameter as well as shifting the charge neutrality level.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.8
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• pp.681-687
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• 2003

The syntheses of LaNiO$_3$Perovskite crystalline phase from mixtures of La$_2$O$_3$and NiO via it mechanochemical(used planetary mill) and a wet ball mill process were investigated. A single and stable LaNiO$_3$perovskite crystalline phase was successfully prepared by using a heat free mechanochemical process which produced a fine amorphous powder, while that phase was not formed in a wet ball mill process which needed heat treatment ranging from 500 to 150$0^{\circ}C$ and produced a coarse powder. It was shown that the LaNiO$_3$ceramics made of the mechanochemically synthesized powder possesed a good metallic characteristic.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.40 no.1
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• pp.23-31
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• 2016

In this study, we modified the conventional tensile split Hopkinson bar(TSHB) apparatus typically used for the high strength steel to evaluate the tensile deformation behavior of soft metallic sheet materials under high strain rates. Stress-strain curves of high purity single and multi-crystalline materials were obtained using this experimental procedure. Grain morphology and initial crystallographic orientation were characterized by EBSD(Electron Backscattered Diffraction) method measured in a FE-SEM(Field emission-scanning electron microscopy). The fractured surfaces were observed by using optical microscopy. The relationship between plastic deformation of aluminum crystalline materials under high-strain rates and the initial microstructure and the crystallographic orientations has been addressed.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.17 no.3
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• pp.91-94
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• 2007

Single-crystalline $SnO_2$ nanowires were successfully grown on Si(001) substrates via vapor-liquid-solid mechanism in a thermal chemical vapor deposition. Large quantity of $SnO_2$ nanowires were synthesized at temperature ranges of $950{\sim}1000^{\circ}C$ in Ar atmosphere. It was found that the grown $SnO_2$ nanowires are of a tetragonal rutile structure and single crystalline by diffraction and transmission electron microscopy measurements. Broad emission located at about 600 m from the grown nanowires was clearly observed in room temperature photoluminescence measurements, indicating that the emission band originated from defect level transition into $SnO_2$ nanowires.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04b
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• pp.95-95
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• 2009

Single-crystalline Bi nanowires have motivated many researchers to investigate novel quasi-one-dimensional phenomena such as the wire-boundary scattering effect and quantum confinement effects due to their electron effective mass (~0.001 me). Single crystalline Bi nanowires were found to grow on as-sputtered films after thermal annealing at $270^{\circ}C$. This was facilitated by relaxation of stress between the film and the thermally oxidized Si substrate that originated from a mismatch of the thermal expansion. However, the method is known to produce relatively lower density of nanowires than that of other nanowire growth methods for device applications. In order to increase density of nanowire, we propose a method for enhancing compressive stress which is a driving force for nanowire growth. In this work, we report that the compressive stress can be controlled by modifying a substrate structure. A combination of photolithography and a reactive ion etching technique was used to fabricate patterns on a Si substrate. It was found that the nanowire density of a Bi film grown on $100{\mu}m{\times}100{\mu}m$ pattern Si substrate increased over seven times higher than that of a Bi sample grown on a normal substrate. Our results show that density of nanowire can be enhanced by sidewall effect in optimized proper pattern sizes for the Bi nanowire growth.

• Composites Research
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• v.33 no.1
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• pp.7-12
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• 2020

Over the past decade, liquid crystalline epoxy (LCER) has attracted much attention as a promising matrix for the development of efficient heat dissipation materials. This study presents a comprehensive study including synthesis, preparation and chacterization of polymer/inorganic composites using typical 4,4-diglycidyloxybiphenyl (DP) epoxy among LECR. To confirm the thermal conductivity of composite materials, we have prepared composite samples composed of epoxy resin and single-wall carbon nanotube (SWCNT) as a filler. In particular, DP composites exhibit higher thermal conductivity than commercial epoxy composites that use the same type of filler due to the highly ordered microstructure of the LCER. In addition, the thermal conductivity of the DP composite can be controlled by controlling the amount of filler. In particular, the DP composite containing a SWCNT content of 50 wt% has the highest thermal conductivity of 2.008 W/mK.

• Journal of the Korean Solar Energy Society
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• v.30 no.6
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• pp.16-21
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• 2010

It is well-known that Boron-doped Cz Si solar cells suffer light-induced degradation due to boron-oxygen defect which is responsible of a reduction in lifetime and hence efficiency. In this paper, we assume that PV solar cell has been connected with variable load to account the real operating condition and it shows different light-induced degradation of Si solar cell. To evaluate the effect of light-induced degradation for solar cell with various load, Single crystalline solar cells are connected with open and short circuits during light exposure. Isc-Voc curve evaluate light induced degradation of solar cells and the reason is explained as a change for serial resistance. From the results, Electrical characteristics of solar cells show better performance under short circuit conditions, after light exposure.