Analysis and comparison of initial performance degradation for single crystalline silicon solar cell under open and short circuit

단결정 태양전지의 단락 및 개방 시 노광에 의한 초기 출력저하 비교 분석

  • Received : 2010.10.19
  • Accepted : 2010.12.06
  • Published : 2010.12.30

Abstract

It is well-known that Boron-doped Cz Si solar cells suffer light-induced degradation due to boron-oxygen defect which is responsible of a reduction in lifetime and hence efficiency. In this paper, we assume that PV solar cell has been connected with variable load to account the real operating condition and it shows different light-induced degradation of Si solar cell. To evaluate the effect of light-induced degradation for solar cell with various load, Single crystalline solar cells are connected with open and short circuits during light exposure. Isc-Voc curve evaluate light induced degradation of solar cells and the reason is explained as a change for serial resistance. From the results, Electrical characteristics of solar cells show better performance under short circuit conditions, after light exposure.

Keywords

Acknowledgement

Supported by : 한국에너지 기술평가원(KETEP)

References

  1. Kengo Morita, Takamitsu Inoue, Hiroshi Kato, Izumi Tsuda, Yoshihiro Hishikawa "DEGRDATION FACTOR ANALYSIS OF CRYSTALLINE-Si PV MODULES THROUGH LONG-TERM FIELD EXPOSURE TEST" 3rd world conference on Photovoltaic Energy Conversion May 11-18, 2003 Osaka, Japan..
  2. Hiroshi Hashigami, YuItakura, Tadashi Saitoh "Effect of illumination conditions on Czochralski-grown silicon solar cell degradation" Journal of applied physics, Volume 93, Number 7, 2003, pp 4240-4245. https://doi.org/10.1063/1.1559430
  3. Ben Damiani, Mohamed Hilali, Ajeet Rohatgi "LIGHT INDUCED DEGRADATION IN CZOCHRALSKI SILICON DURING ILLUMINATED HIGH TEMPERATURE PROCESSING" IEEE, 2002, pp 348-351
  4. Hiroshi Hashigami, Marwan Dhamrin, Tadashi Saitoh "Performance Degradation of Czochralski-GrownSilicon solar cells by Means of CurrentInjection" Jpn J. Appl.Phys. Vol.41. 2002 pp L1191-L1193. https://doi.org/10.1143/JJAP.41.L1191
  5. Bianca Lim, Karsten Bothe, Jan Schmidt "Modeling the grneration anddissociation of the boron-oxygen complex in B-doped CZ-Si" IEEE, 2008.
  6. Vichai Meemongkolkiat, Kenta Nakayashiki, Ajeet Rohatgi, Geoffrey Crabtree, Jeff Nickarson, TheresA L.Jester "The effect of the variation in resistivity and lifetime on the solar cells performance along the commercially grown GA-and B doped czochralski ingots" IEEE, 2005, pp 1115-1118.
  7. S.W.Glunz, S.Rein, W.Warta, J.Knobloch, W.Wettling "Degradation of carrier lifetime in CZ silicon solar cells" Solar Energy Materials & Solar cells, 2001, pp 219-229 https://doi.org/10.1016/S0927-0248(00)00098-2
  8. 이재형, 임동건, 이준신 "태양전지 원론" 홍릉과학출판사, 2005
  9. Robert F.Pierret "Semiconductor Device Fundamentals" Addison-Wesley Publishing Company, Inc, 1996