• Title/Summary/Keyword: simulated device

Search Result 622, Processing Time 0.025 seconds

Surge Voltage Distribution at the Different Bonding Practice During a Direct Lightning Stroke to Building (건물의 직격뢰시 본딩 방식에 따른 서지 진압 분포)

  • Lee, Jae-Bok;Chang, Sug-Hun;Myung, Sung-Ho;Cho, Yuen-Gue
    • The Transactions of the Korean Institute of Electrical Engineers P
    • /
    • v.57 no.4
    • /
    • pp.444-450
    • /
    • 2008
  • There are several ways to bond to building grounding systems for reducing GPR(ground potential rise) and EMI resulting from power system faults or lightning stroke to building. In order to verify effective bonding practice, the GPR and voltage of equipment due to the direct stroke to building are calculated with ATP-EMTP model for transformer, transmission line and MOV(Metal oxide varistor). The simulated model shows a satisfactory accuracy compared with experimental result for the $8/20{\mu}s$ simulated current pulse. It is observed that separate grounding can cause dangerous voltage to the building equipment and the performance of surge protective device can improve when it is installed to the protected equipment in distance as short as possible.

A Study on design of the Ferroelectrics Cantilever for RF Switch (RF Switch용 강유전체 Cantilever 설계에 관한 연구)

  • Kim, In-Sung;Min, Bok-Ki;Song, Jae-Sung;Muller, A.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2004.07b
    • /
    • pp.652-655
    • /
    • 2004
  • RF MEMS is a miniature device or an array of integration devices and mechanical components and fabricated with If batch-processing techniques. RF MEMS application area are in phased arrays and reconfigurable apertures for defence and telecommunication systems, switching network for satellite communication, and single-pole double throw switches for wireless application. Recently, RF MEMS switches have been developed for the application to the milimeter wave system. RF MEMS switches offer a substantilly higher performance than PM diode or FET switches. In this paper, SPDT(single-pole-double-throw) switch are designed to use 10 GHz. Actuation voltage and displacement are simulated by tool. And stress and distribution are simulated.

  • PDF

A Study of Simplified Calculation Methods for Outside Vertical Illuminance using VBA (VBA(Visual Basic for Applications)를 활용한 실외 수직면 조도 간이계산법에 관한 연구)

  • Yun, Su-In;Kim, Kang-Soo
    • Journal of the Architectural Institute of Korea Structure & Construction
    • /
    • v.34 no.12
    • /
    • pp.65-72
    • /
    • 2018
  • The purpose of this study is to predict vertical illuminance accurately at the design stage of a building without the help of simulation tools. Comparing two well-known vertical illuminance prediction algorithms with measured values, it is verified that the Igawa model is more consistent with the measured values than the Perez model. Using the DIVA program, we simulated the vertical illuminance at 30-degree intervals from south to north, compared with the vertical illuminance calculated with the Igawa model. The result of calculation values were verified from 120 degrees east to 120 degrees west. The vertical illuminance values with each of three shade devices were calculated using the Igawa model, and compared with the vertical illuminance simulated by DIVA program. As a result, all the errors when installing horizontal / vertical / grid shade divices were included in the error standard specified by ASHRAE.

Comparison of Current-Voltage Characteristics of Nanosheet FET and FinFET (Nanosheet FET와 FinFET의 전류-전압 특성 비교)

  • Ahn, Eun Seo;Yu, Yun Seop
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
    • /
    • 2022.05a
    • /
    • pp.560-561
    • /
    • 2022
  • In this paper, current-voltage characteristics of various types of Nanosheet FET (NSFET) and FinFET are simulated with 3D device simulator. The threshold voltage and subthreshold swing extracted from the simulated current-voltage characteristics of NSFET and FinFET were compared. Both of threshold voltage and drain current of NSFET are higher than those of FinFET. The subthreshold voltage swing (SS) of NSFET is steeper than that of FinFET.

  • PDF

The characteristics and optimal modeling of input source for optical device using thin film filter in optical telecommunication network (광통신용 박막필터형 광소자 분석을 위한 최적화 모델링과 특성분석)

  • 김명진;이승걸
    • Korean Journal of Optics and Photonics
    • /
    • v.14 no.3
    • /
    • pp.306-311
    • /
    • 2003
  • In this paper, we modeled the incident beam in order to analyze and evaluate the optical thin film device for wavelength division multiplexing in optical telecommunication network. As applied ray tracing method to the optical path, we were compared the accuracy of coupling efficiency simulated by two modeling methods. In the results of sinulation, ceil modeling method was preferred to annual modeling method in micro-optic device because of accuracy for coupling efficiency and Gaussian intensity distribution. In the results of optimal simulation for optical device using thin film filter, the distance (d1) between optical fiber and GRIN lens, the distance (d2) between GRIN lens and thin film filter and the coupling efficiency were 0.24 mm, 0.25 mm and -0.11 ㏈ respectively. As d2 was displaced at 0.25 mm and d1 was varied in order to evaluate the optimal value, d1 and maximum coupling efficiency were 0.24 mm and -0.35㏈, respectively. Then the results of experiment were corresponded to that of optimal simulation by cell modeling and it was possible to analyze the performance for optical device using thin film filter by the simulation.

Variation-tolerant Non-volatile Ternary Content Addressable Memory with Magnetic Tunnel Junction

  • Cho, Dooho;Kim, Kyungmin;Yoo, Changsik
    • JSTS:Journal of Semiconductor Technology and Science
    • /
    • v.17 no.3
    • /
    • pp.458-464
    • /
    • 2017
  • A magnetic tunnel junction (MTJ) based ternary content addressable memory (TCAM) is proposed which provides non-volatility. A unit cell of the TCAM has two MTJ's and 4.875 transistors, which allows the realization of TCAM in a small area. The equivalent resistance of parallel connected multiple unit cells is compared with the equivalent resistance of parallel connected multiple reference resistance, which provides the averaging effect of the variations of device characteristics. This averaging effect renders the proposed TCAM to be variation-tolerant. Using 65-nm CMOS model parameters, the operation of the proposed TCAM has been evaluated including the Monte-Carlo simulated variations of the device characteristics, the supply voltage variation, and the temperature variation. With the tunneling magnetoresistance ratio (TMR) of 1.5 and all the variations being included, the error probability of the search operation is found to be smaller than 0.033-%.

An IPD Based 2.5 GHz Power Divider for WiMax Applications

  • Maharjan, Ram Krishna;Kim, Nam-Young
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2009.06a
    • /
    • pp.50-51
    • /
    • 2009
  • This paper presents integrated passive device (IPD) based on Wilkinson power divider. The simulated 2-way power divider has the insertion loss of 3.123 dB, output isolation of -24.576 dB, input return loss of 26.415 dB, and output return loss of 33.478 dB. The power divider is based on IPD process design simulation at 2.5 GHz for WiMAX (Worldwide Interoperability for Microwave Access) applications. The chip size of power divider is $1\;\times\;1.2\;mm^2$, which is under fabrication.

  • PDF

Boiling Heat Transfer from a locally Heated Surface -A Simulated Electronic Device under Liquid Immersion Cooling- (국부적인 발열부분을 가진 표면에서의 잠김 비등열전달 -전자부품 액침 냉각에서의 응용-)

  • 하광순;최상민
    • Transactions of the Korean Society of Mechanical Engineers
    • /
    • v.15 no.2
    • /
    • pp.685-692
    • /
    • 1991
  • The pool boiling behavior of a heated surface has been investigated experimentally, focusing on the cases when only a part of the contact surface is heated. Characteristic boiling curves are obtained with circular metal surface test pieces heated below while immersed in Refrigerant-113. Locally heated test pieces are fabricated by inserting a heating block at the center inside a larger conducting block. Overall heat transfer rates are measured while the experimental conditions are systematically varied. The local temperature profiles along the radius are measured for conducting blocks. It is found that the conjugated boiling condition exists and the total heat fluxes should be correlated to a suitably defined temperature difference.

Development of Femoral Bone Model of Human Body for Simulation of Side Falls (측면낙상 시뮬레이션용 대퇴골 모델 개발에 관한 연구)

  • Park, Ji Su;Koo, Sang-Mo;Kim, Choong Hyun
    • The Transactions of The Korean Institute of Electrical Engineers
    • /
    • v.63 no.7
    • /
    • pp.956-961
    • /
    • 2014
  • Due to the increasing needs of anti-fall device for elderly, it is required to develop the test rigs for fall simulation. The femoral bone model consists of silicone and steel is used as an effective device to simulate falls. In this work, we propose five different femoral bone models and analyse them by using a commercial FEA tool. It has been shown that two kinds of simplified models exhibit the simulated side falls with an error range of ~1% in the impact load of femoral neck compared with full model. Especially, the upper tissue model is found to provide us with the best efficient test environment, attributable to its simple structure.

Design Optimization of Silicon-based Junctionless Fin-type Field-Effect Transistors for Low Standby Power Technology

  • Seo, Jae Hwa;Yuan, Heng;Kang, In Man
    • Journal of Electrical Engineering and Technology
    • /
    • v.8 no.6
    • /
    • pp.1497-1502
    • /
    • 2013
  • Recently, the junctionless (JL) transistors realized by a single-type doping process have attracted attention instead of the conventional metal-oxide-semiconductor field-effect transistors (MOSFET). The JL transistor can overcome MOSFET's problems such as the thermal budget and short-channel effect. Thus, the JL transistor is considered as great alternative device for a next generation low standby power silicon system. In this paper, the JL FinFET was simulated with a three dimensional (3D) technology computer-aided design (TCAD) simulator and optimized for DC characteristics according to device dimension and doping concentration. The design variables were the fin width ($W_{fin}$), fin height ($H_{fin}$), and doping concentration ($D_{ch}$). After the optimization of DC characteristics, RF characteristics of JL FinFET were also extracted.