• 센서학회지
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• 제25권2호
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• pp.116-123
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• 2016

This paper presents the fabrication and evaluation of the novel drag force type air flowmeter using MEMS technologies for the vehicle applications. To obtain the air drag force, the flowmeter utilized the curved beam structure, which was realized by the difference of residual stress between the silicon oxide layer and the silicon nitride layer. The paddle structure was applied for the maximum air drag force, and the dual-beam was adapted to prevent distortion. The basic experiments were performed in the wind tunnel, and the stable outputs were obtained. The device was applied to the internal combustion engine, and the results were compared with the HI-DS output where the convection thermal flowmeter was used as the reference sensor. The results indicated that the comparable resolutions and response times were obtained under the various engine speeds.

• 한국수소및신에너지학회논문집
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• 제15권4호
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• pp.317-323
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• 2004

We fabricated a MISFET using Pd/NiCr gate for the detecting of hydrogen gas in the air and investigated its electrical characteristics. To improve stability and high concenntration sensitivity and remove the blister generated by the penetration of hydrogen atoms Pd/NiCr catalyst gate metal are used as dual gate. To reduce the gate drift voltage caused by the inflow of hydrogen, the gate insulators of sensing and reference FFET were constructed with double insulation layers of silicon dioxide and silicon nitride. The hydrogen response of MISFET were amplified with the difference of gate voltages of both MISFET. To minimize the drift and the noise, we used a OP177 operational amplifier. The sensitivity of the Pd/NiCr gate MISFET was lower than that of Pd/Pt gate MISFET, but it showed good stability and ability to detect high concentration hydrogen up to 1000ppm.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.953-956
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• 2009

We have investigated the effect of light on amorphous silicon thin film transistors based photo-sensor applications. We have analyzed the instability caused by electrical gate bias stresses under the light illumination and the effect of photo-induced quasi-annealing on the instability. Threshold voltage ($V_{TH}$) under the negative gate bias stress with light illumination was more decreased than that under the negative gate bias stress without light illumination even though $V_{TH}$ caused by the light-induced stress without negative gate bias was shifted positively. These results are because the increase of carrier density in a channel region caused by the light illumination has the enhanced effect on the instability caused by negative gate bias stress. The prolonged light illumination led to the recovery of shifted VTH caused by negative gate bias stress under the light illumination due to the recombination of trapped hole charges.

• Transactions on Electrical and Electronic Materials
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• 제15권1호
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• pp.49-54
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• 2014

In this study, we carried out an investigation of the etch characteristics of silicon (Si) film, and the selectivity of Si to $SiO_2$ in $SF_6/O_2$ plasma. The etch rate of the Si film was decreased on adding $O_2$ gas, and the selectivity of Si to $SiO_2$ was increased, on adding $O_2$ gas to the $SF_6$ plasma. The optical condition of the Si film with this work was 1,350 nm/min, at a gas mixing ratio of $SF_6/O_2$ (=130:30 sccm). At the same time, the etch rate was measured as functions of the various etching parameters. The X-ray photoelectron spectroscopy analysis showed the efficient destruction of oxide bonds by ion bombardment, as well as the accumulation of high volatile reaction products on the etched surface. Field emission auger electron spectroscopy analysis was used to examine the efficiency of the ion-stimulated desorption of the reaction products.

• Transactions on Electrical and Electronic Materials
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• 제13권2호
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• pp.106-109
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• 2012

A low power methane gas sensor with microheater was fabricated by silicon bulk micromachining technology. In order to heat up the sensing layer to operating temperature, a platinum (Pt) micro heater was embedded in the gas sensor. The line width and gap of the microheater was 20 ${\mu}m$ and 4.5 ${\mu}m$, respectively. Zinc oxide (ZnO) nanowhisker arrays were grown on a sensor from a ZnO seed layer using a hydrothermal method. A 200 ml aqueous solution of 0.1 mol zinc nitrate hexahydrate, 0.1 mol hexamethylenetetramine, and 0.02 mol polyethylenimine was used for growing ZnO nanowhiskers. Temperature distribution of the sensor was analyzed by infrared thermal camera. The optimum temperature for highest sensitivity was found to be $250^{\circ}C$ although relatively high (64%) sensitivity was obtained even at as low a temperature as $150^{\circ}C$. The power consumption was 72 mW at $250^{\circ}C$, and only 25 mW at $150^{\circ}C$.

• ETRI Journal
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• 제38권4호
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• pp.685-694
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• 2016

A surface micromachined piezoresistive pressure sensor with a novel internal substrate vacuum cavity was developed. The proposed internal substrate vacuum cavity is formed by selectively etching the silicon substrate under the sensing diaphragm. For the proposed cavity, a new fabrication process including a cavity side-wall formation, dry isotropic cavity etching, and cavity vacuum sealing was developed that is fully CMOS-compatible, low in cost, and reliable. The sensitivity of the fabricated pressure sensors is 2.80 mV/V/bar and 3.46 mV/V/bar for a rectangular and circular diaphragm, respectively, and the linearity is 0.39% and 0.16% for these two diaphragms. The temperature coefficient of the resistances of the polysilicon piezoresistor is 0.003% to 0.005% per degree of Celsius according to the sensor design. The temperature coefficient of the offset voltage at 1 atm is 0.0019 mV and 0.0051 mV per degree of Celsius for a rectangular and circular diaphragm, respectively. The measurement results demonstrate the feasibility of the proposed pressure sensor as a highly sensitive circuit-integrated pressure sensor.

• 한국전기전자재료학회논문지
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• 제25권2호
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• pp.91-95
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• 2012

ZnO thin films were deposited on p-type 4H-SiC substrate by pulsed laser deposition. ZnO nanowires were formed on p-type 4H-SiC substrate by furnace. Ti/Au electrodes were deposited on ZnO thin film/SiC and ZnO nanowire/SiC structures, respectively. Structural and crystallographical properties of the fabricated ZnO thin film/SiC and ZnO nanowire/SiC structures were investigated by field emission scanning electron microscope and X-ray diffraction. In this work, resistance and sensitivity of ZnO thin film/SiC gas sensor and ZnO nanowire/SiC gas sensor were measured at $300^{\circ}C$ with various CO gas concentrations (0%, 90%, 70%, and 50%). Resistance of gas sensor decreases at CO gas atmosphere. Sensitivity of ZnO nanowire/SiC gas sensor is twice as big as sensitivity of ZnO thin film/SiC gas sensor.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2005년도 춘계종합학술대회
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• pp.363-366
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• 2005

마이크로 흐름센서는 종래의 반도체 집적회로 공정기술을 이용하여 소형으로 제작이 가능하며, 빠른 응답특성으로 다양한 응용이 기대되고 있다. 본 연구에서는 넓은 흐름의 세기 영역에서 정밀한 감도를 가지는 2차원 마이크로 흐름센서를 실리콘 기판위에 설계하였다. 흐름센서 중앙에 하나의 히터와 양측에 3쌍의 온도 감지막을 가진 새로운 구조를 제안하고, 제안된 구조의 성능평가를 위해 유한차분법을 이용하석 열운송방정식을 시간영역에서 해석하였다. 성능평가는 제안된 흐름센서 모델에 대하여 공기흐름의 세기 변화에 따른 온도분포를 계산함으로써 실제 흐름센서의 동작을 정량적으로 분석하였다.

• 센서학회지
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• 제11권1호
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• pp.1-8
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• 2002

온도 측정이 필요한 다양한 용도의 소자에 응용되고 있는 열전쌍열(thermopile) 제작에 SOI 구조를 응용하여, 특성을 개선하였다. 열전쌍열을 구성하는 저항체가 단결정 실리콘으로, 제벡 계수(seebeck coefficient)가 높은 재료일 뿐 아니라, 실리콘 저항체를 산화막을 이용하여 실리콘 기판과 절연 분리한 구조로 되어있어서, 기존의 이온주입 공정에 의해 불순물을 주입하는 방법으로 제작된 저항체에 비해서 두 접점(hot junction 및 cold junction) 사이의 열 전달을 극적으로 감소시킬 수 있어서 소자의 특성을 개선할 수 있었다. 열전쌍열은 p형 단결정 실리콘 저항체 17개 및 n형 17개를 직렬 연결로 구성했다. 저항체의 길이 $1600{\mu}m$, 폭 $40{\mu}m$, 두께 $1{\mu}m$으로 제작된 열전쌍열에 빛을 조사하여 소자 양단에 온도차를 발생시키고, 그 때 발생하는 기전력을 측정한 결과 130mV/K의 우수한 특성을 나타냈다.

• The Korean Journal of Ceramics
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• 제7권1호
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• pp.36-40
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• 2001

In order to fabricate uncooled IR sensors for pyroelectric applications, multilayered thin films of Pt/PbTiO$_3$/Pt/Ti/Si$_3$N$_4$/SiO$_2$/Si and thermally isolating membrane structures of square-shaped/cantilevers-shaped microstructures were prepared. Cavity was also fabricated via direct silicon wafer bonding and etching technique. Metallic Pt layer was deposited by ion beam sputtering while PbTiO$_3$ thin films were prepared by sol-gel technique. Micromachining technology was used to fabricate microstructured-membrane detectors. In order to avoid a difficulty of etching active layers, silicon-nitride membrane structure was fabricated through the direct bonding and etching of the silicon wafer. Although multilayered thin film deposition and device fabrications were processed independently, these could b integrated to make IR micro-sensor devices.