Transactions of the Korean hydrogen and new energy society (한국수소및신에너지학회논문집)

The Korean Hydrogen and New Energy Society (한국수소및신에너지학회)
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Fabrication of MISFET type hydrogen sensor for high Performance

고성능 MISFET형 수소센서의 제작과 특성

  • Kang, K.H. (Grad. School of Kyungpook Nationnl Univ.) ;
  • Park, K.Y. (Grad. School of Kyungpook Nationnl Univ.) ;
  • Han, S.D. (Korea Institute of Energy Research) ;
  • Choi, S.Y. (School of Electronic & Electrical & Computer Engineering, Kyungpook National Univ.)
  • Published : 2004.12.30
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Abstract

We fabricated a MISFET using Pd/NiCr gate for the detecting of hydrogen gas in the air and investigated its electrical characteristics. To improve stability and high concenntration sensitivity and remove the blister generated by the penetration of hydrogen atoms Pd/NiCr catalyst gate metal are used as dual gate. To reduce the gate drift voltage caused by the inflow of hydrogen, the gate insulators of sensing and reference FFET were constructed with double insulation layers of silicon dioxide and silicon nitride. The hydrogen response of MISFET were amplified with the difference of gate voltages of both MISFET. To minimize the drift and the noise, we used a OP177 operational amplifier. The sensitivity of the Pd/NiCr gate MISFET was lower than that of Pd/Pt gate MISFET, but it showed good stability and ability to detect high concentration hydrogen up to 1000ppm.

Keywords

Acknowledgement

Supported by : 한국에너지연구원

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