• Journal of the Korea Organic Resources Recycling Association
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• v.31 no.3
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• pp.35-41
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• 2023

In this study, silicon sludge generated in semiconductor manufacturing process is recycled and applied as materials for pigments and paints. In detail, metallic impurities are removed from silicon sludge to obtain plate-like silicon sludge powder (SW-sludge), which is then coated with titanium dioxide via sol-gel method (TCS-sludge). SW-sludge and TCS-sludge are dispersed in hydrophilic transparent varnish and sprayed onto glass substrates to observe the possibility for the application as materials for pigments and paints. Notably, the applicability of TCS-sludge-based paint is improved compared to SW-sludge-based paint after the titanium dioxide coating. Moreover, the color of TCS-sludge-based paint turns into white. Accordingly, it is confirmed that the applicability and hydrophilicity are improved by the presence of outer titanium dioxide layer. In this regard, it is expected that the recycled TCS-sludge may be a future material for the application as pigments and paints.

• 전기의세계
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• v.32 no.10
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• pp.616-625
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• 1983

본고에서는 PECVD의 기본원리와 장치를 간단히 설명한 후, 현재까지 PECVD법에 의해 형성된 박막중 반도체소자에의 적용을 위해 광범위하게 연구개발이 진행되고 있는 plasma silicon nitride (이하 PD SiN)와 plasma silicon dioxide (or oxide) (이하 PD SiO$_{2}$)막의 특성에 대해 현재까지의 연구결과를 중심으로 PECVD막의 성질을 고찰하고, 반도체 소자에의 응용을 검토한다.

• Proceedings of the Optical Society of Korea Conference
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• 1997.08a
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• pp.15-15
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• 1997

• Journal of Electrochemical Science and Technology
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• v.12 no.3
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• pp.317-322
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• 2021

Silicon (Si) has been considered as a promising anode material because of its abundant reserves in nature, low lithium ion (Li⁺) intercalation/de-intercalation potential (below 0.5 V vs. Li/Li⁺) and high theoretical capacity of 4200 mA h/g. In this paper, we prepared a silicon-based (Si-based) anode material containing a small amount of silicon carbide by using magnesiothermic coreduction of silica and hexachlorobenzene. Because of good conductivity of silicon carbide, the cycle performance of the silicon-based anode materials containing few silicon carbide is greatly improved compared with pure silicon. The raw materials were formulated according to a silicon-carbon molar ratio of 10:0, 10:1, 10:2 and 10:3, and the obtained products were purified and tested for their electrochemical properties. After 1000 cycles, the specific capacities of the materials with silicon-carbon molar ratios of 10:0, 10:1, 10:2 and 10:3 were still up to 412.3 mA h/g, 970.3 mA h/g, 875.0 mA h/g and 788.6 mA h/g, respectively. Although most of the added carbon reacted with silicon to form silicon carbide, because of the good conductivity of silicon carbide, the cycle performance of silicon-based anode materials was significantly better than that of pure silicon.

• Journal of Sensor Science and Technology
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• v.30 no.4
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• pp.250-254
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• 2021

A highly sensitive and selective non-dispersive infrared (NDIR) carbon dioxide gas sensor requires achieving high transmittance and narrow full width at half maximum (FWHM), which depends on the interface of the optical filter for precise measurement of carbon dioxide concentration. This paper presents the design, simulation, and fabrication of a Fabry-Perot filter based on a distributed Bragg reflector (DBR) for a low-cost NDIR carbon dioxide sensor. The Fabry-Perot filter consists of upper and lower DBR pairs, which comprise multilayered stacks of alternating high- and low-index thin films, and a cavity layer for the resonance of incident light. As the number of DBR pairs inside the reflector increases, the FWHM of the transmitted light becomes narrower, but the transmittance of light decreases substantially. Therefore, it is essential to analyze the relationship between the FWHM and transmittance according to the number of DBR pairs. The DBR is made of silicon and silicon dioxide by RF magnetron sputtering on a glass wafer. After the optimal conditions based on simulation results were realized, the DBR exhibited a light transmittance of 38.5% at 4.26 ㎛ and an FWHM of 158 nm. The improved results substantiate the advantages of the low-cost and minimized process compared to expensive commercial filters.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.147-150
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• 2003

In this paper, We fabricated a high temperature pressure sensor using SBD(silicon- direct-bonding) wafer of $Si/SiO_2$/Si-sub structure. This sensor was very sensitive because the piezoresistor is fabricated by single crystal silicon of the first layer of SDB wafer. Also, it was possible to operate the sensor at high temperature over $120^{\circ}C$ which is the temperature limitation of general silicon sensor because the piezoresistor was dielectric isolation from silicon substrate using silicon dioxide of the second layer. The sensitivity of this sensor is very high as the measured result of D2200 shows $183.6\;{\mu}V/V{\cdot}kPa$. Also, the output characteristic of linearity was very good. This sensor was available at high temperature as $300^{\circ}C$.

• Journal of Sensor Science and Technology
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• v.13 no.3
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• pp.175-181
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• 2004

A pressure sensor for high temperature was fabricated by using a SDB(Silicon-Direct-Bonding) wafer with a Si/$SiO_{2}$/ Si structure. High pressure sensitivity was shown from the sensor using a single crystal silicon of the first layer as a piezoresistive layer. It also was made feasible to use under the high temperature as of over $120^{\circ}C$, which is generally known as the critical temperature for the general silicon sensor, by isolating the piezoresistive layer dielectrically and thermally from the silicon substrate with a silicon dioxide layer of the second layer. The pressure sensor fabricated in this research showed very high sensitivity as of $183.6{\mu}V/V{\cdot}kPa$, and its characteristics also showed an excellent linearity with low hysteresis. This sensor was usable up to the high temperature range of $300^{\circ}C$.

• Journal of the Semiconductor & Display Technology
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• v.4 no.3 s.12
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• pp.1-4
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• 2005

Silicon oxynitride films were deposited using ammonia as a nitrogen source via PECVD (plasma enhanced chemical vapor deposition) to study the physical properties of the films. Silane and nitrous oxide were used as silicon and oxygen sources, respectively. The composition of the silicon oxynitride films was well controlled by changing the ratios of the sources and confirmed by XPS. The silicon oxynitride films with high oxygen content showed bigger compressive stress and less refractive index, while the values of surface roughness were around 1 nm, irrespective of the variation of the source ratios.

• Journal of Sensor Science and Technology
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• v.22 no.5
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• pp.369-373
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• 2013

In this paper, we developed contact type temperature sensor with single crystal silicon strip thermopile. This sensor consists of 15 p-type single crystal silicon strips, 17 n-types and contact electrodes on silicon dioxide silicon membrane. The result of electromotive force measuring showed very good characteristic as $15.18mV/^{\circ}C$ when temperature difference between the two ends of the thermopile occurs by applying thermal contact on the thermopile which was fabricated with silicon strip of $200{\mu}m$ length, $20{\mu}m$ width, $1{\mu}m$ thickness.

• Journal of the Korean institute of surface engineering
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• v.32 no.3
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• pp.235-238
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• 1999

Silicon dioxide films were prepared by anodizing silicon wafers in an ethylene $glycol+HNO_3(0.04{\;}N)$ at 20 to $70^{\circ}C$. The voltage between silicon anode and platinum cathode was measured during this process. Under the constant current electrolysis, the voltage increased with oxide film growth. The transition time at which the voltage reached the predetermined value depended on the temperature of the electrolyte. After the time of electrolysis reached the transition time, the anodization was changed the constant voltage mode. The depth profile of oxide film/Si substrate was confirmed by XPS analysis to study the influence of the electrolyte temperature on the anodization. Usually, the oxide-silicon peaks disappear in the silicon substrate, however, this peak was not small at $45^{\circ}C$ in this region.