• 제목/요약/키워드: silicon dioxide

검색결과 266건 처리시간 0.029초

Silicon Waferdnl에 화학증착된 Silicon Dioxide 박막에 관한 연구 (A Study on Chemical Vapor Deposited SiO2 Films on Si Water)

  • 김기열;최돈복;소명기
    • 한국세라믹학회지
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    • 제27권2호
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    • pp.219-225
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    • 1990
  • Silicon dioxide thin film has been grown by a chemical vapor deposition (CVD) technique using SiH4, and O2 gaseous mixture on a silicon substrate. The experimental results indicated that the deposition rate as a function of the input ratio (O2/SiH4) shows two regions, increasing region and decreasing region. Also the deposition rate increases with increasing the deposition temperature. The microstructure of deposited silicon dioxide films is amorphous. The experimental results of infrared absorption spectrums indicate that Si-H and Si-OH bond increase with decreasing input ratio, but Si-O bond is independent on the input ratio. The interfacial charge of deposited silicon dioxide decreases with increasing input ratio.

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저온공정 실리콘 산화막의 질소 패시베이션 효과 (Passivation of Silicon Oxide Film Deposited at Low Temperature by Annealing in Nitrogen Ambient)

  • 김준식;정호균;최병덕;이기용;이준신
    • 한국전기전자재료학회논문지
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    • 제19권4호
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    • pp.334-338
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    • 2006
  • Poly silicon TFT requires high quality dielectric film; conventional method of growing silicon dioxide needs highly hazardous chemicals such as silane. We have grown high quality dielectric film of silicon dioxide using non-hazardous chemical such as TFOS and ozone as reaction gases by APCVD. The films grown were characterized through C-V curves of MOS structures. Conventional APCVD requires high temperature processing where as in the process of current study, we developed a low temperature process. Interface trap density was substantially decreased in the silicon surface coated with the silicon dioxide film after annealing in nitrogen ambient. The interface with such low trap density could be used for poly silicon TFT fabrication with cheaper cost and potentially less hazards.

K 및 Al 이중이온주입된 SiO$_2$ 박막의 pH, pNa 및 pK 농도 감지특성에 관한 연구 (A Study on the pH-, pNa- and pK-Sensing Properties of K and Al Coimplanted SiO$_2$ Thin Films)

  • 김병수;신백균;이붕주;이덕출
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제52권7호
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    • pp.293-297
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    • 2003
  • Silicon dioxide (SiO$_2$) layers were fabricated on Si$_3$N$_4$/SiO$_2$/Si layer structures by low pressure chemical vapor deposition (LPCVD). Potassium and aluminum were then coimplanted by implanting potassium ions with the energy of 100 [keY] and dose of 5x10$^{16}$ [cm ̄$^2$] and 1x10$^{17}$ [cm ̄$^2$] into an aluminum buffer layer on the SiO$_2$Si$_3$N4/SiO$_2$/Si structure. The pH, pNa, and pK ion sensitivities of the resulting layers were investigated and compared to those of as-deposited silicon dioxide layer. The pK-sensitivity of the silicon dioxide was enhanced by the K and Al coimplantation. On the contrary, the pH and pNa-sensitivities of the coimplanted silicon dioxides were quite lower than that of the as-deposited silicon dioxide.

급속 열처리 장치를 이용한 실리콘 산화막의 Annealing 효과 (Effects of Annealing on Silicon Dioxide using Rapid Thermal Process System)

  • 박현우;장현룡;황호정
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1988년도 전기.전자공학 학술대회 논문집
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    • pp.383-386
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    • 1988
  • In MOS integrated circuits, annealing after oxidation process is necessary to improve physical properties of silicon dioxide. With subsequent annealing in inert gases such as nitrogen or argon, and excess silicon bond is allowed time to complete the oxidation and surface charge density is reduced. In this paper, we will present effects of the rapid thermal annealing on silicon dioxide. In order to evaluate characteristics of silicon dioxide, we analyzed C-V curve dependent on annealing time and temperature, and presented variation of fixed oxide charge.

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수분 안정성 향상을 위한 천마 추출물 함유 분말의 제조 및 평가 (Fabrication and Characterization of Gastrodia elata-loaded Particles for Increased Moisture Stability)

  • 정재환;진성규
    • 한국분말재료학회지
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    • 제27권3호
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    • pp.241-246
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    • 2020
  • To develop Gastrodia elata (GE)-loaded particles for herbal extract dosage forms, various GE-loaded particles containing dextrin, isomalt, maltodextrin, and silicon dioxide as solidifying carriers in the GE water extract are prepared using the spray drying method. Their physical properties are evaluated using the repose angle, Hausner ratio, Carr's index, weight increase rate at 40℃/75% RH condition, and scanning electron microscopy (SEM). Particles made of dextrin improve the fluidity, compressibility, and water stability. In addition, 2% silicon dioxide increases the fluidity and moisture stability. The best flowability and compressibility of GE-loaded particles are observed with TP, dextrin, and silicon dioxide amounts in the ratio of 6/4/0.2 (34.29 ± 2.86°, 1.48 ± 0.03, and 38.29 ± 2.39%, repose angle, Hausner Ratio, and Carr's index, respectively) and moisture stability with a 2% weight increase rate for 14 h at 40℃/75% RH condition. Therefore, our results suggest that the particles prepared by the spray drying method with dextrin and 2% silicon dioxide can be used as powerful particles to improve the flowability, compressibility, and moisture stability of GE.

정제 제형 제조를 위한 포공영 추출물 함유 분말의 제조 및 평가 (Fabrication and Characterization of Taraxacum platycarpum Extract-loaded Particles for Tablet Dosage Form)

  • 진성규
    • 한국분말재료학회지
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    • 제26권3호
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    • pp.225-230
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    • 2019
  • To develop Taraxacum platycarpum extract (TP)-loaded particles for tablet dosage form, various TP-loaded particles composed of TP, dextrin, microcrystalline cellulose (MCC), silicon dioxide, ethanol, and water are prepared using a spray-drying method and fluid-bed-drying method. Their physical properties are evaluated using angle of repose, Hausner ratio, Carr's index, hardness, disintegrant time, and scanning electron microscopy. Optimal TP-loaded particles improve flowability and compressibility. Furthermore, 2% silicon dioxide gives increased flowability and compressibility. The formula of TP-loaded fluid-bed-drying particles at a TP/MCC/silicon-dioxide amount of 5/5/0.2 improves the angle of repose, Hausner ratio, Carr's index, hardness, and disintegrant time as compared with the TP-loaded spray-drying particles. The TP-loaded fluid-bed-drying particles considerably improve flowability and compressibility ($35.10^{\circ}$ vs. $40.3^{\circ}$, 0.97 vs. 1.17, and 18.97% vs. 28.97% for the angle of repose, Hausner ratio, and Carr's index, respectively), hardness (11.34 vs. 4.7 KP), and disintegrant time (7.4 vs. 10.4 min) as compared with the TP-loaded spray-drying particles. Thus, the results suggest that these fluid-bed-drying particles with MCC and silicon dioxide can be used as powerful particles to improve the flowability and compressibility of the TP.

생약 추출물 함유 정제 제조를 위한 이산화규소 함유 분말의 제조 및 평가 (Fabrication and Characterization of Bangpungtongseong-San Extract-loaded Particles for Tablet Dosage Form)

  • 박진우;진성규
    • 한국분말재료학회지
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    • 제28권3호
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    • pp.227-232
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    • 2021
  • The purpose of this study is to optimize the powder formulation and manufacturing conditions for the solidification of an extract of the herb Bangpungtongseong-san (BPTS). To develop BPTS-loaded particles for the tablet dosage form, various BPTS-loaded particles composed of BPTS, dextrin, microcrystalline cellulose (MCC), silicon dioxide, ethanol, and water are prepared using spray-drying and high shear granulation (high-speed mixing). Their physical properties are evaluated using scanning electron microscopy and measurements of the angle of repose, Hausner ratio, Carr's index, hardness, and disintegration time. The optimal BPTS-loaded particles exhibit improved flowability and compressibility. In particular, the BPTS-loaded particles containing silicon dioxide show significantly improved flowability and compressibility (the angle of repose, Hausner ratio, and Carr's index are 35.27 ± 0.58°, 1.18 ± 0.06, and 15.67 ± 1.68%, respectively), hardness (18.97 ± 1.00 KP), and disintegration time (17.60 ± 1.50 min) compared to those without silicon dioxide. Therefore, this study suggests that particles prepared by high-speed mixing can be used to greatly improve the flowability and compressibility of BPTS using MCC and silicon dioxide.

이산화규소 나노입자의 마우스 복강 내 주입에 의한 급성독성 (In vivo Acute Toxicity of Silicon Dioxide Nanoparticle to Mice after Intraperitonial Injection)

  • 차춘남;정원철;이여은;유창열;김곤섭;김의경;김석;이후장
    • 한국식품위생안전성학회지
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    • 제26권1호
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    • pp.43-48
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    • 2011
  • 본 연구는 이산화규소 나노입자의 급성독성을 확인하기 위해 여러 농도로 마우스의 복강에 주사한 다음 24시간 후에, 혈액학적, 혈액생화학적, 그리고 병리조직학적인 검사를 수행하였다. 혈액학적 검사에서, group II (100 mg/kg 이산화규소 나노입자)에서는 lymphocyte와 monocyte의 수치가 대조군과 비교하여 통계적으로 유의한 차이를 나타내었으며(p < 0.05), group III (200 mg/kg 이산화규소 나노입자)에서는 lymphocyte, monocyte, 그리고 hemoglobin의 수치가 대조군과 비교하여 통계적으로 유의한 차이를 나타내었다(p < 0.05). 혈액생화학적 검사에서, group II의 경우에는 ALT가, group III의 경우에는 AST, ALT, BUN, 그리고 creatinine이 대조군과 비교하여 통계적으로 유의한 차이를 나타내었다(p < 0.05). 병리조직학적 관찰에서는, group III의 간과 신장 조직에서 미약한 독성작용이 관찰되었다. 향후, 이산화규소 나노입자에 대한 장기적인 연구를 통해 독성영향 및 작용기전을 규명할 필요가 있는 것으로 사료된다.

Dissolution of North Korean Magnesite by using Hydrochloric Acid

  • Baek, Ui-Hyun;Park, Hyungkyu;Lee, Jin-Young;Kang, Jungshin
    • Korean Chemical Engineering Research
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    • 제55권5호
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    • pp.711-717
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    • 2017
  • A fundamental study was conducted on the dissolution of North Korean magnesite using hydrochloric acid to understand the dissolution behavior of the magnesium and impurities. The influence of the acid concentration, particle size of the magnesite, reaction temperature, and pulp density on the dissolution of magnesium, iron, calcium, aluminum, and silicon dioxide was studied. The experimental results showed that 98.5% of magnesium, 86.9% of iron, 87.3% of calcium, 23.6% of aluminum, and 20.4% of silicon dioxide were dissolved when magnesite particle sizes within the range of $75{\sim}105{\mu}m$ were reacted using 3 M HCl solution under 6% pulp density at 363 K for 3 h. The residues that remained after the dissolution were silicon dioxide, talc, and clinochlore.

이산화실리콘 층의 예각부식 (Acute Angle Etching of silicon Dioxide Layer)

  • 최연익
    • 대한전자공학회논문지
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    • 제22권4호
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    • pp.84-91
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    • 1985
  • 열적으로 성장된 이산화실리콘 층 위에 실리카 필름 박막을 도포함으로써, 열산화막의 예각부식 공정이 제안되었다. 실리카필름의 밀화온도를 175$^{\circ}C$ 에서 1,150$^{\circ}C$로 변화시킴에 따라, $3^{\circ}$ 에서 $40^{\circ}$사이의 경사각을 얻었다. 또한 예각부식 공정의 해석적인 모형이 제시되었으며, 이산화실리콘 층의 부식단면을 기술하는 방정식이 Fermat의 최단시간 정리를 이용하여 유도되었다. 전자주사 현미경으로 부터 얻어진 부식단면과 이론적으로 계산된 단면을 비교한 결과, 서로 잘 부합되었다.

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