Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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Effects of Annealing on Silicon Dioxide using Rapid Thermal Process System

급속 열처리 장치를 이용한 실리콘 산화막의 Annealing 효과

  • Park, H,W. (Dept. of Electronic Engeneering, Chung Ang Univ.) ;
  • Jang, H.Y. (Dept. of Electronic Engeneering, Chung Ang Univ.) ;
  • Hwang, H.J. (Dept. of Electronic Engeneering, Chung Ang Univ.)
  • 박현우 (중앙대학교 전자공학과) ;
  • 장현룡 (중앙대학교 전자공학과) ;
  • 황호정 (중앙대학교 전자공학과)
  • Published : 1988.07.01
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Abstract

In MOS integrated circuits, annealing after oxidation process is necessary to improve physical properties of silicon dioxide. With subsequent annealing in inert gases such as nitrogen or argon, and excess silicon bond is allowed time to complete the oxidation and surface charge density is reduced. In this paper, we will present effects of the rapid thermal annealing on silicon dioxide. In order to evaluate characteristics of silicon dioxide, we analyzed C-V curve dependent on annealing time and temperature, and presented variation of fixed oxide charge.

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