• Journal of the Korean Ceramic Society
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• v.36 no.12
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• pp.1356-1363
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• 1999

Self-reinforced silicon carbide was prepared by hot pressing and the control of starting phases of raw materials and its microstructural characteristics was investigated. The specimens with self-reinforced microstructure were obtained from the compacts with mixed compositions of ${\alpha}$-and ${\beta}$-SiC powders. Self-reinforced microstructure which is composed of large dispersed grains with rod-like shape and matrix with small equiaxed grains was formed by the transformation to the ${\alpha}$-SiC with 4H polytype for ${\beta}$-SiC and anisotropic grain growth during the heat treatment. Of all speimens the values of volume fraction maximum length and aspect ratio for large grains with rode-like types were the highest at the specimen with 50 vol% ${\beta}$-SiC in the starting SiC powder and therefore this specimen showed the highest fracture toughness due to the crack deflection by rod-like grains during crack propagation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.131-131
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• 2009

Silicon Carbide (SiC) is a material with a wide bandgap (3.26eV), a high critical electric field (~2.3MV/cm), a and a high bulk electron mobility ($\sim900cm^2/Vs$). These electronic properties allow high breakdown voltage, high-speed switching capability, and high temperature operation compared to Si devices. Although various SiC DMOSFET structures have been reported so far for optimizing performances, the effect of channel dimension on the switching performance of SiC DMOSFETs has not been extensively examined. This paper studies different channel dimensons ($L_{CH}$ : $0.5{\mu}m$, $1\;{\mu}m$, $1.5\;{\mu}m$) and their effect on the the device transient characteristics. The key design parameters for SiC DMOSFETs have been optimized and a physics-based two-dimensional (2-D) mixed device and circuit simulator by Silvaco Inc. has been used to understand the relationship. with the switching characteristics. To investigate transient characteristic of the device, mixed-mode simulation has been performed, where the solution of the basic transport equations for the 2-D device structures is directly embedded into the solution procedure for the circuit equations. We observe an increase in the turn-on and turn-off time with increasing the channel length. The switching time in 4H-SiC DMOSFETs have been found to be seriously affected by the various intrinsic parasitic components, such as gate-source capacitance and channel resistance. The intrinsic parasitic components relate to the delay time required for the carrier transit from source to drain. Therefore, improvement of switching speed in 4H-SiC DMOSFETs is essential to reduce the gate-source capacitance and channel resistance.

• Journal of computational fluids engineering
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• v.18 no.3
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• pp.67-71
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• 2013

Recently, the rapid development of the semiconductor industry induces the prompt technical progress in the area of device integration and the application of large diameter wafers for the price competitiveness. As a result of the usage of large wafers in the semiconductor industry, the silicon carbide components which have layers of silicon carbide on graphite or RBSC substrates is getting widely used due to the advantages of SiC such as high hardness and strength, chemical and ionic resistant to all the environments superior than other ceramic materials. For the uniform and homogeneous deposition of silicon carbide on these huge components, it needs to know about the gas flow in the CVD reactor, not only for the delicate adjustment of the process variables but more essentially for the cost reduction for the shape change of specimens and their holders on the stage of reactor. In this research, the CFD simulation is challenged for the prediction of the inner distribution of the gas velocity. Chemical reaction simulation is used to predict the distribution of concentration of the reacting gas with the rotating velocity of the stage. With the increase of the rotating speed, more uniform distribution of the reacting gas on the surface of the stage was obtained.

• Proceedings of the IEEK Conference
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• 2001.06b
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• pp.5-8
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• 2001

This paper describes the development of SiC MOSFET model for high temperature applications. The temperature dependence of the threshold voltage and mobility of SiC MOSFET is quite different from that of silicon MOSFET. We developed the empirical temperature model of threshold voltage and mobility of SiC MOSFET and implemented into HSPICE. Using this model the MOSFET Id-Vds characteristics as a function of temperature are simillated. Also the SiC CMOS operational amplifieris designed using this model and the temperature dependence of the frequency response, transfer characteristics and slew rate as a function of temperature are analyzed.

• KIPE Magazine
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• v.14 no.1
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• pp.26-33
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• 2009

광대역 반도체중에서도 SiC(Silicon Carbide)는 우수한 전기적, 기계적, 열적, 화학적, 광학적 그리고 생체 적합성 등으로 인하여 지난 반세기 동안 급속히 발전하고 있는 SiM/NEMS(Micro/Nano Electro Mechanical System)를 대처할 수 있는 차세대 M/NEMS로써 고온, 고압, 고진동, 고습도 등의 극한 환경에서도 사용 가능한 자동차, 선박, 우주항공, 산업 프랜트용 마이크로 센서 및 액츄에이터, 초고주파수 정보통신용 부품 그리고 바이오 센서 등의 분야에 크게 주목을 받고 있다. 본 논문에서는 현재 SiC M/NEMS의 연구개발 현황에 대해서 소개하고자 한다.

• Journal of IKEEE
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• v.19 no.4
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• pp.491-499
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• 2015

Silicon Carbide(SiC) has large advantage in high temperature and high voltage applications because of its high thermal conductivity and large band gap energy. When using SiC to design power semiconductor devices, edge termination techniques have to be adjusted for its maximum breakdown voltage characteristics. Many edge termination techniques have been proposed, and the most appropriate technique for SiC device is Junction Termination Extension(JTE). In this paper, the change of breakdown voltage efficiency ratio according to the change of doping concentration and passivation oxide charge of each JTE techniques is demonstrated. As a result, the maximum breakdown voltage ratio of Single Zone JTE(SZ-JTE), Double Zone JTE(DZ-JTE), Multiple Floating Zone JTE(MFZ-JTE), and Space Modulated JTE(SM-JTE) is 98.24%, 99.02%, 98.98%, 99.22% each. MFZ-JTE has the smallest and SZ-JTE has the largest sensitivity of breakdown voltage ratios according to the change of JTE doping concentration. Additionally the degradation of breakdown voltage due to the passivation oxide charge is analyzed, and the sensitivity is largest in SZ-JTE and smallest in MFZ-JTE, too. In this paper, DZ-JTE and SM-JTE is the best efficiency JTE techniques than MFZ-JTE which needs large doping concentration in short JTE width.

• Journal of the Korean Ceramic Society
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• v.33 no.10
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• pp.1156-1162
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• 1996

• Proceedings of the Korean Ceranic Society Conference
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• 2002.10a
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• pp.117.2-117
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• 2002

• Electrical & Electronic Materials
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• v.20 no.5
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• pp.21-29
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• 2007

• Journal of the Korean Ceramic Society
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• v.34 no.12
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• pp.1240-1246
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• 1997

Silicon carbides with self-reinforced microstructure which hore a small grain matrix and dispersed large grains with rod-like type were prepared by the liquid-phase sintering and the control of starting phases of raw materials. The specimens with self-reinforced microstructure could be obtained from the compacts with mixed compositions of $\alpha$-SiC and 10-50 % $\beta$-SiC powders and by the pressureless sintering at 185$0^{\circ}C$ for 5h. Large grains with rod or plate-like types were 4H-SiC and small grains with equi-axed type were 6H-SiC. Fracture grains with rod or plate-like types were 4h-SiC and small grains with equi-axed type were 6H-SiC. Fracture toughness of specimens with self-reinforced microstructure was increased by the crack deflection and formation of microcracking due to the existence of rod-like large grains during crack propagation.