• 제목/요약/키워드: silicon carbide (SiC)

검색결과 563건 처리시간 0.026초

탄화규소의 T-curve, 마모 및 침식 (T-curve, wear and Erosion of Silicon Carbide)

  • 채준혁;조성재;윤경진;김석삼
    • Tribology and Lubricants
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    • 제14권4호
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    • pp.114-120
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    • 1998
  • The T-curve, wear and erosion behaviors of two different silicon carbides, i.e., the fine grained SiC and the in situ-toughened SiC(IST-SiC). Both materials exhibited an increasing T-curve behavior, although the T-curve of IST-SiC was steeper than that of fine grained SiC. The fracture toughness of IST-SiC was larger than that of fine grained SiC at long crack regime, whereas an opposite tendency occurred at short crack regime. The rate of material removal during wear and erosion tests was higher in IST-SiC compared to fine grained SiC. The difference between the material removal rates of two materials was discussed in the light of their R-curve behaviors.

Influence of Parasitic Parameters on Switching Characteristics and Layout Design Considerations of SiC MOSFETs

  • Qin, Haihong;Ma, Ceyu;Zhu, Ziyue;Yan, Yangguang
    • Journal of Power Electronics
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    • 제18권4호
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    • pp.1255-1267
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    • 2018
  • Parasitic parameters have a larger influence on Silicon Carbide (SiC) devices with an increase of the switching frequency. This limits full utilization of the performance advantages of the low switching losses in high frequency applications. By combining a theoretical analysis with a experimental parametric study, a mathematic model considering the parasitic inductance and parasitic capacitance is developed for the basic switching circuit of a SiC MOSFET. The main factors affecting the switching characteristics are explored. Moreover, a fast-switching double pulse test platform is built to measure the individual influences of each parasitic parameters on the switching characteristics. In addition, guidelines are revealed through experimental results. Due to the limits of the practical layout in the high-speed switching circuits of SiC devices, the matching relations are developed and an optimized layout design method for the parasitic inductance is proposed under a constant length of the switching loop. The design criteria are concluded based on the impact of the parasitic parameters. This provides guidelines for layout design considerations of SiC-based high-speed switching circuits.

SiC 입자 보강 Al 복합재료의 피로균열 진전거동 (The Fatigue Crack Growth Behavior of Silicon Carbide Particles Reinforced Aluminun Metal Matrix Composites)

  • 권재도;문윤배;김상태
    • 대한기계학회논문집
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    • 제19권1호
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    • pp.122-131
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    • 1995
  • The research trends for metal matrix composites have been on basic mechanical properties, fatigue behavior after aging and fractographic observations. In this study, the fatigue crack initiation as well as the fatigue crack growth behavior and the fracture mechanism were investigated through observations of the fracture surface on silicon carbide particles reinforced aluminum metal matrix composites(SiCp/Al). Based on the fractographic study done by scanning electron microscope and replica, crack growth path model and fracture mechanism are presented. The mechanical properties, such as the tensile strength, yield strength and elongation of SiCp/Al composites are improved in a longitudinal direction, however, the fatigue life is shorter than the basic Al6061 alloys. From fractographic observations, it is found that the failure mode is ductile in basic Ai6061 alloys. And because some SiC particles were pulled out from the matrix and a few SiC particles could be seen on the fracture surface of SiCp/Al, crack growth paths are believed to follow the interface of the matrix and its particles.

Wear behavior of $Si_3N_4$-SiC nanocomposite in water

  • Kim, S. H.;Lee, S. W.
    • 한국결정성장학회:학술대회논문집
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    • 한국결정성장학회 1997년도 Proceedings of the 13th KACG Technical Meeting `97 Industrial Crystallization Symposium(ICS)-Doosan Resort, Chunchon, October 30-31, 1997
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    • pp.187-187
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    • 1997
  • Silicon nitride is the most excellent materials among structural ceramics. It has been reported that fracture toughness was improved with adding second phase particles, whisker, fiber etc. However, containing of second phase particles enhanced fracture toughness, however flexural strength was degraded. As adding nanosize SiC particles into silicon nitride, the physical properties of fluxural strength, fracture toughness, the modulus of elasticity. In this study, 2wt% $Al_2$O$_3$ and 4 wt% $Y_2$O$_3$ were added into UBE E-10 and 0, 10, 20, 30, 40, 50 vol% nano-SiC powder (Sumitomo T1 powder) were added, respectively. It is hot pressed at 185$0^{\circ}C$ for 1 hour. Most of structural ceramics for engineering application are wear resistance. In this study, wear behaviors (in water) of silicon nitride with varying the amount of nano-size silicon carbide were investigated, and was compared to physical properties. Simultaneously wear mechanism will be found out.

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MOS 소자용 Silicon Carbide의 열산화막 생성 및 특징 (Characteristics and Formation of Thermal Oxidative Film Silicon Carbide for MOS Devices)

  • 오경영;이계홍;이계홍;장성주
    • 한국재료학회지
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    • 제12권5호
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    • pp.327-333
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    • 2002
  • In order to obtain the oxidation layer for SiC MOS, the oxide layers by thermal oxidation process with dry and wet method were deposited and characterized. Deposition temperature for oxidation layer was $1100^{\circ}C$~130$0^{\circ}C$ by $O_2$ and Ar atmosphere. The oxide thickness, surface morphology, and interface characteristic of deposited oxide layers were measurement by ellipsometer, SEM, TEM, AFM, and SIMS. Thickness of oxidation layer was confirmed 50nm and 90nm to with deposition temperature at $1150^{\circ}C$ and $1200{\circ}C$ for dry 4 hours and wet 1 hour, respectively. For the high purity oxidation layer, the necessity of sacrificial oxidation which is etched for the removal of the defeats on the wafer after quickly thermal oxidation was confirmed.

성형미세구조가 반응소결 탄화규소체의 소결미세구조 및 기계적 특성에 미치는 영향 (Effect of Green Microstructure on Sintered Microstructure and Mechanical Properties of Reaction-Bonded Silicon Carbide)

  • 박현철;김재원;백운규;최성철
    • 한국세라믹학회지
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    • 제36권1호
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    • pp.97-105
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    • 1999
  • 탄화규소와 카본의 이성분계에서 pH, 계면활성제 및 출발원료의 입도 분포를 이용하여 성형체의 기공크기 및 기공을 제어에 관한 연구를 수행하였다. 성형체는 각각 다른 분산조건을 가지는 슬러리를 이장성형법을 이용하여 제조하였으며, 입자간의 응\ulcorner제어에 따른 상이한 성형미세구조를 가지도록 하였다. 제조된 성형체에 대하여 반응소결 공정은 1$600^{\circ}C$, 진공분위기에서 20분간 응용 실리콘 침윤 공정을 행하였다. 초기 성형 미세구조가 반응소결체의 미세구조에 미치는 영향을 관찰하기 위하여 광학 현미경 및 SEM 분석을 통하여 제조된 소결체의 미세구조를 분석하였으며, 그리고 이에 따른 반응 소결체의 기계적 특성을 평가하였다. 각각의 분산조건에 따라 성형미세구조는 다르게 나타났으며, 미세한 탄화규소를 입자를 사용하였을 경우에 기공크기가 현저하게 작아짐을 확인하였다. 제조된 반응소결체의 미세구조 분석결과 일반적인 반응소결 탄화수소에서 발견되는 bimodal 미세구조는 관찰되지 않았으며, 이는 초기 탄화규소의 카본의 비가 중요항 변수인 것으로 분석하였다. 반응소결 탄화규소의 3-점 곡강도 값은 입자간의 분산이 잘 이루어진 성형체를 사용하였을 경우 310$\pm$40 MPa으로서 응집이 일어난 성형체를 사용한 반응소결체의 260$\pm$50MPa 보다 높았다.

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탄화 규소가 균일 분산된 규화 몰리브데넘계 복합재의 제조 (Fabrication of Molybdenum Silicide-based Composites with Uniformly Dispersed Silicon Carbide)

  • 최원준;박천웅;김영도;변종민
    • 한국분말재료학회지
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    • 제25권5호
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    • pp.402-407
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    • 2018
  • Molybdenum silicide has gained interest for high temperature structural applications. However, poor fracture toughness at room temperatures and low creep resistance at elevated temperatures have hindered its practical applications. This study uses a novel powder metallurgical approach applied to uniformly mixed molybdenum silicide-based composites with silicon carbide. The degree of powder mixing with different ball milling time is also demonstrated by Voronoi diagrams. Core-shell composite powder with Mo nanoparticles as the shell and ${\beta}-SiC$ as the core is prepared via chemical vapor transport. Using this prepared core-shell composite powder, the molybdenum silicide-based composites with uniformly dispersed ${\beta}-SiC$ are fabricated using pressureless sintering. The relative density of the specimens sintered at $1500^{\circ}C$ for 10 h is 97.1%, which is similar to pressure sintering owing to improved sinterability using Mo nanoparticles.

실리콘 wafer sludge로부터 얻어진 SiC의 단광화 기술 (Briquetting of Waste Silicon Carbide Obtained from Silicon Wafer Sludges)

  • 구성모;윤수종;김혜성
    • 한국분말재료학회지
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    • 제23권1호
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    • pp.43-48
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    • 2016
  • Waste SiC powders obtained from silicon wafer sludge have very low density and a narrow particle size distribution of $10-20{\mu}m$. A scarce yield of C and Si is expected when SiC powders are incorporated into the Fe melt without briquetting. Here, the briquetting variables of the SiC powders are studied as a function of the sintering temperature, pressure, and type and contents of the binders to improve the yield. It is experimentally confirmed that Si and C from the sintered briquette can be incorporated effectively into the Fe melt when the waste SiC powders milled for 30 min with 20 wt.% Fe binder are sintered at $1100^{\circ}C$ upon compaction using a pressure of 250 MPa. XRF-WDS analysis shows that an yield of about 90% is obtained when the SiC briquette is kept in the Fe melt at $1650^{\circ}C$ for more than 1 h.

세라믹 가스터빈 환경을 고려한 탄화규소의 입자충격 손상거동-장기간 산화에 따른 산화물층의 영향- (Particle Impact Damage behaviors in silicon Carbide Under Gas Turbine Environments-Effect of Oxide Layer Due to Long-Term Oxidation-)

  • 신형섭
    • 대한기계학회논문집
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    • 제19권4호
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    • pp.1033-1040
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    • 1995
  • To simulate strength reliability and durability of ceramic parts under gas turbine application environments, particle impact damage behaviors in silicon carbide oxidized at 1673 K and 1523 K for 200 hours in atmosphere were investigated. The long-term oxidation produced a slight increase in the static fracture strength. Particle impact caused a spalling of oxide layer. The patterns of spalling and damage induced were dependent upon the property and impact velocity of the particle. Especially, the difference in spalling behaviors induced could be explained by introducing the formation mechanism of lateral crack and elastic-plastic deformation behavior at impact sit. At the low impact velocity regions, the oxidized SiC showed a little increase in the residual strength due to the cushion effect of oxide layer, as compared with the as-received SiC without oxide layer.

로켓 추진기관용 C/SiC 내열부품 개발 (Development of C/SiC Composite Parts for Rocket Propulsion)

  • 김연철;서상규
    • 한국추진공학회지
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    • 제23권2호
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    • pp.68-77
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    • 2019
  • 고체 및 액체 로켓 추진 기관 내열부품으로 사용하기 위하여 C/SiC 복합 재료를 LSI(Liquid Silicon Infiltration) 공법으로 개발하였다. 조성비에 따른 내열 특성은 아크 플라즈마, 초음속 토치 시험으로 평가하였으며 $H_2O$$CO_2$ 산화에 의한 유효 삭마식을 제시하였다. 연소시험을 통하여 고체 및 액체 추진기관용 노즐목 삽입재, 확대부 내열재 및 연소실 내열부품 등 다양한 형상으로 제작이 가능함을 확인하였으며 높은 내삭마 성능과 열구조 성능이 입증되었다.