Characteristics and Formation of Thermal Oxidative Film Silicon Carbide for MOS Devices |
O, Gyeong-Yeong
(동신대학교 공과대학 세라믹공학과)
Lee, Gye-Hong (동신대학교 공과대학 세라믹공학과) Lee, Gye-Hong (동신대학교 대학원 물리과) Jang, Seong-Ju (동신대학교 대학원 물리과) |
1 | H. Kobayashi, T. Sakurai, M. Nishiyama, and Y. Nishioka, Appl. phys. Let., 76(16), 2336 (2001) |
2 | R.C. Jaeger, Introduction to Microelectronic Fabrication Volume V, P. 29 |
3 | M.B. Johnson, M.E. Zvanut, and Otha Fichardson, J. electronic materials., 29 (3), 368 (2000) DOI ScienceOn |
4 | L.A. Lipkin and J.W. Palmour, J. Electronic Materials., 25(5), 909 (1995) DOI |
5 | M.K. Das, J.A. Cooper, JR., and M.R. Melloch, J. electronic Materials., 27(4), 353 (1998) DOI ScienceOn |
6 | K. Yamashita, M. Iwamoto, and T. Hino, Jpn. J. Appl. Phsy., 20(8), 1429 (1981) DOI |
7 | E.F.Opila, J.Am. Ceram.Soc., 82(3), 625 (1999) DOI ScienceOn |
8 | H.I. Matsunami, Electronics and Communications in Japan. Part 2., 81 (7), 38 (1998) DOI ScienceOn |
9 | M. Ventra and S.T. Pantelides, J. Electronic materials., 26(3), 353 (2000) |
10 | M. Eickhoff, N. Vouroutzis, A. Nielsen, G. Krotz, and J. Stoemenos, J. electrochemical society., 148(6), G336 (2001) DOI ScienceOn |
11 | P.K. Nauta and M.W. Hillen, J. Appl. Phys., 49(5), 2862 (1978) DOI ScienceOn |
12 | A.G. Tangena, J. Middelhoek, and N.F. de Rooij, Jpn. J. Appl. phys., 49 (5), 2876 (1978) DOI ScienceOn |
13 | K. Yamashita and T. Hino, Jpn. J. Appl. Phys., 21 (10), 1437 (1982) DOI |
14 | B.E. Deal and A. S. Grove, J. Appl. Phys., 36, 3770 (1965) DOI |
15 | A. Goetzberger and J.C. Irvin, IEEE. Trans. Electron Devices., 15, 1009 (1968) DOI ScienceOn |
16 | E.I. Goldman, A.G. Zhdan, and N. F. Kukharsksya, semicconductors., 33(3), 308 (1999) DOI ScienceOn |
17 | M. Bakowski, U. Gustafsson, and Z. Ovuka, Microelectron. Reliab., 38 (3), 381 (1998) DOI ScienceOn |
18 | A. Rys, N. Singh, and M. Cameron, J. Electrochem. Soc, 142(4), 1318 (1995) DOI |
19 | Inter-university Semiconductor Research Center, SEOUL NATIONAL UNIVERSITY., |
20 | A. Suzuki, H. Ashida, and N. Furui, Jpn. J. Appl. Phys., 21 (4), 579 (1982) DOI |
21 | J. Anthony powell, David J. Larkin, and Phillip B. ABEL, J. Electronic Materials., 24(4), 295 (1995) DOI ScienceOn |
22 | L. zhou, V. Audurier, and P. Pirouz, J. Electrochem. Soc, 144(6), L161 (1997) DOI ScienceOn |
23 | J. Boo, S. Lee, K. Yu, M. Sung, and Y.Kim, surface and coatings Tech., 131, 147 (2000) DOI ScienceOn |