Briquetting of Waste Silicon Carbide Obtained from Silicon Wafer Sludges

Waste SiC powders obtained from silicon wafer sludge have very low density and a narrow particle size distribution of $10-20{\mu}m$. A scarce yield of C and Si is expected when SiC powders are incorporated into the Fe melt without briquetting. Here, the briquetting variables of the SiC powders are studied as a function of the sintering temperature, pressure, and type and contents of the binders to improve the yield. It is experimentally confirmed that Si and C from the sintered briquette can be incorporated effectively into the Fe melt when the waste SiC powders milled for 30 min with 20 wt.% Fe binder are sintered at $1100^{\circ}C$ upon compaction using a pressure of 250 MPa. XRF-WDS analysis shows that an yield of about 90% is obtained when the SiC briquette is kept in the Fe melt at $1650^{\circ}C$ for more than 1 h.

실리콘 wafer sludge로부터 얻어진 SiC의 단광화 기술