• Clean Technology
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• v.23 no.3
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• pp.314-324
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• 2017

To verify the viability of Co, Ru and Zr-based catalyst for $CO_2$ (dry) reforming reaction, catalysts were fabricated using cordierite, silicon carbide and rota monolithic substrates, and they were compared with the conventional $Co-Ru-Zr/SiO_2$ catalyst in terms of performance and durability. Cordierite monolith was showed high activity with the least amount of active component. In addition, when Cordierite monolith was coated with Co-Ru-Zr in various ways, most excellent performance was showed at a precursor solution coating method. In particular, when 0.9 wt% Co-Ru-Zr/Cordierite was used for reaction, it was observed that 95% $CO_2$ conversion was maintained for 300 h at $900^{\circ}C$.

• Nuclear Engineering and Technology
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• v.48 no.3
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• pp.650-659
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• 2016

As a type of accident-tolerant fuel, fully ceramic microencapsulated (FCM) fuel was proposed after the Fukushima accident in Japan. The FCM fuel consists of tristructural isotropic particles randomly dispersed in a silicon carbide (SiC) matrix. For a fuel element with such high heterogeneity, we have proposed a two-temperature homogenized model using the particle transport Monte Carlo method for the heat conduction problem. This model distinguishes between fuel-kernel and SiC matrix temperatures. Moreover, the obtained temperature profiles are more realistic than those of other models. In Part I of the paper, homogenized parameters for the FCM fuel in which tristructural isotropic particles are randomly dispersed in the fine lattice stochastic structure are obtained by (1) matching steady-state analytic solutions of the model with the results of particle transport Monte Carlo method for heat conduction problems, and (2) preserving total enthalpies in fuel kernels and SiC matrix. The homogenized parameters have two desirable properties: (1) they are insensitive to boundary conditions such as coolant bulk temperatures and thickness of cladding, and (2) they are independent of operating power density. By performing the Monte Carlo calculations with the temperature-dependent thermal properties of the constituent materials of the FCM fuel, temperature-dependent homogenized parameters are obtained.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.8
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• pp.481-485
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• 2015

We investigated the effects of annealing on the electrical and thermal properties of ZTO/4H-SiC heterojunction diodes. A ZTO thin film layer was grown on p-type 4H-SiC substrate by using solution process. The ZTO/SiC heterojunction structures annealed at $500^{\circ}C$ show that $I_{on}/I_{off}$ increases from ${\sim}5.13{\times}10^7$ to ${\sim}1.11{\times}10^9$ owing to the increased electron concentration of ZTO layer as confirmed by capacitance-voltage characteristics. In addition, the electrical characterization of ZTO/SiC heterojunction has been carried out in the temperature range of 300~500 K. When the measurement temperature increased from 300 K to 500 K, the reverse current variation of annealed device is higher than as-grown device, which is related to barrier height in the ZTO/SiC interface. It is shown that annealing process is possible to control the electrical characteristics of ZTO/SiC heterojunction diode.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04b
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• pp.37-38
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• 2009

SiC power device possesses attractive features, such as high breakdown voltage, high-speed switching capability, and high temperature operation. In general, device design has a significant effect on the switching characteristics. It is known that in SiC power MOSFET, the JFET region width is one of the most important parameters. In this paper, we demonstrated that the switching performance of DMOSFET is dependent on the with width of the JFET region by using 2-D Mixed-mode simulations. The 4H-SiC DMOSFETs with a JFET region designed to block 800 V were optimized for minimum loss by adjusting the parameters of the n JFET region, CSL, and n-drift layer. It has been found that the JFET region reduces specific on-resistance and therefore the switching characteristics depend on the JFET region.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04b
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• pp.3-6
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• 2009

Aluminum nitride (AIN) thin films were deposited on a polycrystalline 3C-SiC intermediate layer by a pulsed reactive magnetron sputtering system. Characteristics of the AIN/SiC heterostructures were investigated by field emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM), X-ray diffraction (XRD), and Fourier transform infrared spectroscopy (FT-IR). The columnar structure of AIN thin films was observed by FE-SEM. The surface roughness of AlN films on the 3C-SiC buffer layer was measured using AFM. The XRD pattern of AlN films on SiC buffer layers was highly oriented at (002). Full width at half maximum (FWHM) of the rocking curve near (002) reflections was $1.3^{\circ}$. The infrared absorbance spectrum indicated that the residual stress of AIN thin films grown on SiC buffer layers was nearly negligible. The 3C-SiC intermediate layers are promising for the realization of nitride based electronic and mechanical devices.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.2
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• pp.155-160
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• 2020

Ga₂O₃/n-type 4H-SiC heterojunction diodes were fabricated by RF magnetron sputtering. The optical properties of Ga₂O₃ and electrical properties of diodes were investigated. I-V characteristics were compared with simulation data from the Atlas software. The band gap of Ga₂O₃ was changed from 5.01 eV to 4.88 eV through oxygen annealing. The doping concentration of Ga₂O₃ was extracted from C-V characteristics. The annealed oxygen exhibited twice higher doping concentration. The annealed diodes showed improved turn-on voltage (0.99 V) and lower leakage current (3 pA). Furthermore, the oxygen-annealed diodes exhibited a temperature cross-point when temperature increased, and its ideality factor was lower than that of as-grown diodes.

• Smart Structures and Systems
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• v.13 no.4
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• pp.501-515
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• 2014

This paper presents a linear computational homogenization framework to evaluate the effective (or generalized) electromechanical coupling coefficient (EMCC) of adaptive structures with piezoelectric structural fiber (PSF) composite elements. The PSF consists of a silicon carbide (SiC) or carbon core fiber as reinforcement to a fragile piezo-ceramic shell. For the micro-scale analysis, a micromechanics model based on the variational asymptotic method for unit cell homogenization (VAMUCH) is used to evaluate the overall electromechanical properties of the PSF composites. At the macro-scale, a finite element (FE) analysis with the commercial FE code ABAQUS is performed to evaluate the effective EMCC for structures with the PSF composite patches. The EMCC is postprocessed from free-vibrations analysis under short-circuit (SC) and open-circuit (OC) electrodes of the patches. This linear two-scale computational framework may be useful for the optimal design of active structure multi-functional composites which can be used for multi-functional applications such as structural health monitoring, power harvest, vibration sensing and control, damping, and shape control through anisotropic actuation.

• Proceedings of the Korean Society For Composite Materials Conference
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• 2003.04a
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• pp.18-21
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• 2003

The effect of interface bonding strength on the recovery force of SMA wire reinforced polymer matrix composites was investigated by pullout test. Firstly, the recovery forces and transformation temperatures of various prestrained SMA wires were measured and 5% prestrained SMA wires were prepared for the reinforcements of composites. EPDM incorporated with 20vol% silicon carbide particles(SiCp) of 6, 12, $60{mutextrm{m}}$ size were used as matrix. Pullout test results showed that the interface bonding strength increased when the SiCp size decreased due to the increase of elastic modulus of matrix. Cyclic test of composites was performed through control of DC current at the constant displacement mode. The abrupt decrease of recovery force during cycle test at high current was occurred by thermal degradation of matrix. This was in good agreement with temperature related in the thermal degradation of matrix. The hysteresis of recovery force with respect to the temperature was compared between wire and composite and the hysterisis of composites was smaller than the wire due to less thermal conduction.

• Journal of Korea Foundry Society
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• v.17 no.1
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• pp.93-99
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• 1997

A possibility of production of aluminium matrix composites by using the lost foam process was investigated. Silicon carbide particles, graphite particles, and stainless steel wires were used as reinforcement materials. The reinforcement materials were introduced to the polystyrene to form patterns via injection molding process. The results obtained from this experiment can be summarized as follows. In Al/SiCp system, the particles with the radius of $100{\mu}m$ and over were entrapped in the matrix in the case of upward freezing of which solidification direction was opposite to floating direction of the particles. And few particles were entrapped in the matrix in downward freezing. In Al/graphite system, almost no particles were entrapped in the matrix except the area chill attatched. When the thickness of polystyrene slice was 4mm in Al/stainless steel wire system, the floating tendency of fibers was observed to increase as the distance from the ingate was increased.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.232.2-232.2
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• 2014

Since its discovery in 2004, graphene, a sp2-hybridized 2-Dimension carbon material, has drawn enormous attention. A variety of approaches have been attempted, such as epitaxial growth from silicon carbide, chemical reduction of graphene oxide and CVD. Among these approaches, the CVD process takes great attention due to its guarantee of high quality and large scale with high yield on various transition metals. After synthesis of graphene on metal substrate, the subsequent transfer process is needed to transfer graphene onto various target substrates, such as bubbling transfer, renewable epoxy transfer and wet etching transfer. However, those transfer processes are hard to control and inevitably induce defects to graphene film. Especially for wet etching transfer, the metal substrate is totally etched away, which is horrendous resources wasting, time consuming, and unsuitable for industry production. Thus, our group develops one-step process to directly grow graphene on glass substrate in plasma enhanced chemical vapor deposition (PECVD). Copper foil is used as catalyst to enhance the growth of graphene, as well as a temperature shield to provide relatively low temperature to glass substrate. The effect of growth time is reported that longer growth time will provide lower sheet resistance and higher VSG flakes. The VSG with conductivity of $800{\Omega}/sq$ and thickness of 270 nm grown on glass substrate can be obtained under 12 min growing time. The morphology is clearly showed by SEM image and Raman spectra that VSG film is composed of base layer of amorphous carbon and vertically arranged graphene flakes.