• 한국세라믹학회지
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• 제38권10호
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• pp.871-875
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• 2001

Cobalt silicidation at sidewall spacer edge of Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) with post annealing treatment for capacitor forming process has been investigated as a function of dopant species. Cobalt silicidation of nMOSFET with n-type Lightly Doped Drain (LDD) and pMOSFET with p-type LDD produces a well-developed cobalt silicide with its lateral growth underneath the sidewall spacer. In case of pMOSFET with n-type LDD, however, a void is formed at the sidewall spacer edge with no lateral growth of cobalt silicide. The void formation seems to be due to a retarded silicidation process at the LDD region during the first Rapid Thermal Annealing (RTA) for the reaction of Co with Si, resulting in cobalt mono silicide at the LDD region. The subsequent second RTA converts the cobalt monosilicide into cobalt disilicide with the consumption of Si atoms from the Si substrate, producing the void at the sidewall spacer edge in the Si region. The void formed at the sidewall spacer edge serves as a resistance in the current-voltage characteristics of the pMOSFET device.

• 한국터널지하공간학회 논문집
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• 제19권6호
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• pp.871-885
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• 2017

최근 도심지 등에서 활용도가 높아지고 있는 얕은터널은 구조물에 인접하여 얕은 심도에 건설하므로 그 거동에 따른 주변지반 변위에 대한 연구는 아직 충분하지 않다. 특히, 얕은터널의 측벽에서 변위가 일어나면 주변지반의 이완형태 및 주변지반으로 전이되는 하중의 분포와 크기가 영향을 받을 수 있다. 그러나 지금까지 터널의 측벽변위에 관련된 연구는 많지 않고 그나마 터널과 주변지반을 평면변형률조건(plane strain state)으로 단순화하고 터널 전체의 안정이나 파괴메커니즘 규명에 대한 연구에 국한되어 있고, 터널 측벽일부의 변위에 따른 영향을 연구한 사례는 거의 없는 실정이다. 따라서 본 연구에서는 터널측벽의 변위가 터널 주변 횡방향 하중전이에 미치는 영향을 규명하였다. 이를 위하여 탄소봉으로 지반을 조성하고 알미늄으로 터널의 형상을 모형화하여 터널의 한쪽측벽에 수평으로 변위를 주어 토피(0.5D, 0.75D, 1.0D, 1.25D)를 변화시키면서 모형시험을 수행하였고, 일부 측벽의 파괴에 따른 주변지반의 하중전이 거동을 분석하였다. 연구 결과, 얕은터널에서 토피가 일정깊이(0.75D) 이상이면 토피고에 무관하게 일정한 형태로 터널 측벽파괴가 발생하였고 반대측벽에 영향을 미치지 않았다. 그러나, 토피고가 일정깊이 이하일 경우에는 한쪽 측벽의 파괴가 반대쪽 측벽에까지 영향을 미칠 수 있음을 알 수 있었다. 또한, 터널 굴착시 측벽변위가 예상변위량의 50% 발생하면, 터널 파괴는 75% 이상 진행되는 것을 발견하였다. 그러나, 지반조건에 따라 차이를 보일 수 있으므로 이에 대한 추가적인 연구가 필요할 것으로 판단된다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제17권2호
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• pp.192-198
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• 2017

In this paper, we propose a novel double gate vertical channel tunneling field effect transistor (DVTFET) with a dielectric sidewall and optimization characteristics. The dielectric sidewall is applied to the gate region to reduced ambipolar voltage ($V_{amb}$) and double gate structure is applied to improve on-current ($I_{ON}$) and subthreshold swing (SS). We discussed the fin width ($W_S$), body doping concentration, sidewall width ($W_{side}$), drain and gate underlap distance ($X_d$), source doping distance ($X_S$) and pocket doping length ($X_P$) of DVTFET. Each of device performance is investigated with various device parameter variations. To maximize device performance, we apply the optimum values obtained in the above discussion of a optimization simulation. The optimum results are steep SS of 32.6 mV/dec, high $I_{ON}$ of $1.2{\times}10^{-3}A/{\mu}m$ and low $V_{amb}$ of -2.0 V.

• Elastomers and Composites
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• 제52권3호
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• pp.167-172
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• 2017

Ultra-high performance (UHP) tires, for which demand has recently surged, are subject to severe strain conditions due to the low aspect ratio of their sidewalls. It is important to ensure sidewall material durability, since a sudden tire sidewall breakage during vehicle operation is likely to cause a major accident. In the automotive application of rubber parts, cracking is defined as a failure because when cracks occur, the mechanical properties of rubber change. According to Mars, Andre et al., strain and strain energy density (SED) are mainly used as a failure parameters and the SED is generally used as a fatigue damage parameter. In this study, the fatigue life curves of sidewall rubber of tires were determined by using the SED as fatigue damage parameter while the effect of aging on fatigue life was evaluated after obtaining the SED-Nf curves according to aging condition.

• 대한기계학회논문집A
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• 제25권10호
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• pp.1636-1643
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• 2001

Automobile maneuverability and tire durability are significantly influenced by the sidewall tire contour. In order to improve these tire performances, it is very important far one to determine a sidewall contour producing the ideal tension and strain-energy distributions. However, these requirements can nut be simultaneously achieved by conventional non-interactive multi-objective optimization methods based on mathematical programming, because these exhibit the conflicting behavior each other, with respect lo the sidewall contour. Therefore, we execute the tire contour optimization fur improving the maneuverability and the tire durability using satisficing trade-off method.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제55권3호
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• pp.116-121
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• 2006

Most high-k materials are well known not to be etched easily, Some problems such as low etch rate poor sidewall angle, plasma damage, and process complexity were emerged from the high-density DRAM fabrication. Chemical mechanical polishing (CMP) by a damascene process was proposed to pattern this high-k material was polished with some commercial silica slurry as a function of pH variation. Sufficient removal rate with adequate selectivity to realize the pattern mask of tera-ethyl ortho-silicate (TEOS) film for the vertical sidewall angle were obtained. The changes of X-ray diffraction pattern and dielectric constant by CMP process were negligible. The planarization was also achieved for the subsequent multi-level processes. Our new CMP approach will provide a guideline for effective patterning of high-k material by CMP technique.

• Archives of Plastic Surgery
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• 제47권1호
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• pp.102-105
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• 2020

Malignant skin tumors and precancerous lesions have a predilection to be located in the nasal dorsum or sidewall. Although invasive reconstructions have been presented, no simple and suitable method has yet been reported for this area. The flap presented herein, named the lateral nasal advancement flap, is designed on the adjacent lateral region of the sidewall or nasal dorsum and advanced in the medial direction. Two Burow's triangles are removed in the upper and lower portions of the flap: the upper triangle along the nasofacial sulcus and the lower triangle along the nasofacial sulcus and/or the alar groove. Excellent results were obtained in the two clinical cases described in this report. Neither a trap door deformity nor dog-ears developed in either case. The postsurgical scars followed the aesthetic lines and became inconspicuous. A distinct angle was formed in the nasofacial sulcus without anchor sutures. This surgical procedure is technically simple and is performed under local anesthesia. Although the flap is a cheek-based advancement flap, postsurgical scars do not remain in the cheek; instead, they are located in the nasofacial sulcus and alar groove. The lateral nasal advancement flap is recommended for reconstruction of the nasal sidewall and dorsum.

• Design & Manufacturing
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• 제15권3호
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• pp.13-18
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• 2021

In plate forming technology, cylindrical drawing process is widely used in industry due to technological development. In this study, we used stainless steel 3042B and stainless steel 304J1, which are the most commonly used materials in the production of cold and hot water tanks for water purifiers, among cylindrical drawing products. Under the same conditions, the thickness of the sidewall of the product formed by drawn experiment was studied. As a result of the experiment, the bottom thickness of stainless steel 304J1 was considered to be thick. It is judged that the defect rate can be reduced by changing the breaking phenomenon of the floor surface of the cold and hot water bottles to the material of stainless steel 304j1. Stainless steel 304 2B material shows a sharp change in thickness from punch corner R to sidewall position, while stainless steel 304J1 material showed a uniform change from punch corner R to sidewall position. Stainless steel 304J1 material is considered to improve the clamping of the product in the process of extracting the product after hand drawing. The appearance of stainless steel 3042B products is considered to produce more wrinkles in the flange, which exerts greater tensile force on the sidewall during molding, resulting in uneven sidewall thickness.

• 반도체디스플레이기술학회지
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• 제3권1호
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• pp.27-30
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• 2004

In this work, the variation of the sidewall profile of a thick photoresist on the wavelength and proximity gap was investigated. PMER P-LA900PM, DNQ (DiazoNaphthoQuinone) novolac type photoresist, is used for experiments. The calculated results agreed well with the experimental results.

• 소성∙가공
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• 제16권6호
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• pp.438-442
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• 2007

Sidewall curl is the curvature that results from non-uniform through-thickness strain present in the sheet stamping process which involves material flow over a die radius. In order to understand and control curl for tight fit-up tolerances, an analytical model that can provide a reliable measure for the amount of curl would be very helpful. In this study, a model is developed based on the moment-curvature relationship during bending-under-tension operations. For the verification of analytical model, sidewall curl is experimentally measured after deformation of a strip using a bending-under-tension test system. The results show a consistent relationship between the theoretically predicted value and the experimentally obtained one, especially in regions of high curl.