Journal of the Semiconductor & Display Technology (반도체디스플레이기술학회지)
- Volume 3 Issue 1
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- Pages.27-30
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- 2004
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- 1738-2270(pISSN)
A Study on Variation of the Sidewall Angle of a Thick Photoresist on the Wavelength and the Proximity gap
노광파장과 근접거리에 따른 두꺼운 감광막의 측면기울기 변화에 관한 연구
Abstract
In this work, the variation of the sidewall profile of a thick photoresist on the wavelength and proximity gap was investigated. PMER P-LA900PM, DNQ (DiazoNaphthoQuinone) novolac type photoresist, is used for experiments. The calculated results agreed well with the experimental results.