• Journal of the Korean Crystal Growth and Crystal Technology
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• v.32 no.4
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• pp.121-127
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• 2022

β-Gallium oxide (Ga₂O₃), an ultra-wide bandgap semiconductor, has attracted great attention due to its promising applications for high voltage power devices. The most stable phase among five different polytypes, β-Ga₂O₃ has the wider bandgap of 4.9 eV and higher breakdown electric field of 8 MV/cm. Furthermore, it can be grown from melt source, implying higher growth rate and lower fabrication cost than other wide bandgap semiconductors such as SiC, GaN and diamond for the power device applications. In this study, β-Ga₂O₃ bulk crystals were grown by the edge-defined film-fed growth (EFG) process. The growth direction and the principal surface were set to be the [010] direction and the (100) plane of the β-Ga₂O₃ crystal, respectively. The spectra measured by Raman an alysis could exhibit the crystal phase an d impurity dopin g in the β-Ga₂O₃ ingot, and the crystallinity quality and crystal direction were analyzed using high-resolution X-ray diffraction (HRXRD). The crystal quality and various properties of as-grown β-Ga₂O₃ ribbon was systematically analyzed in order to investigate the spatial variation in entire crystal grown by EFG method.

• Journal of the Korean Society of Industry Convergence
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• v.24 no.6_2
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• pp.729-735
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• 2021

Recently Artificial Intelligence(AI) has been developed and used in various fields. Especially AI recognition technology can perceive and distinguish images so it should plays a significant role in quality inspection process. For stability of autonomous driving technology, semiconductors inside automobiles must be protected from external electromagnetic wave(EM wave). As a shield film, a thin polymeric material with hole shaped micro-patterns created by a laser processing could be used for the protection. The shielding efficiency of the film can be increased by the hole structure with appropriate pitch and size. However, since the sensitivity of micro-machining for some parameters, the shape of every single hole can not be same, even it is possible to make defective patterns during process. And it is absolutely time consuming way to inspect all patterns by just using optical microscope. In this paper, we introduce a AI inspection system which is based on web site AI tool. And we evaluate the usefulness of AI model by calculate Area Under ROC curve(Receiver Operating Characteristics). The AI system can classify the micro-patterns into normal or abnormal ones displaying the text of the result on real-time images and save them as image files respectively. Furthermore, pressing the running button, the Hardware of robot arm with two Arduino motors move the film on the optical microscopy stage in order for raster scanning. So this AI system can inspect the entire micro-patterns of a film automatically. If our system could collect much more identified data, it is believed that this system should be a more precise and accurate process for the efficiency of the AI inspection. Also this one could be applied to image-based inspection process of other products.

• Journal of International Area Studies (JIAS)
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• v.18 no.3
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• pp.145-168
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• 2014

Given the distance from Mt. Baekdu, volcanic ash will have the direct impact on South Korea in case Mt. Baekdu erupts. Ash fall deposits or particulate matters(PM10) in the air will cause damages in various sectors. In particular, the PM10 impact on the manufacturing sector when the ash disperses in Korea is needed to be assessed since South Korea's manufacturing sector accounts for more than 30% of GDP. Meanwhile the economic impacts of PM10, including Asian dust, have been researched in Korea as the events become frequent, and losses in the manufacturing have been also reported. This study is to identify vulnerable sectors to volcanic ash in the korean industry, and to assess economic losses in case of a Mt. Baekdu eruption scenario, based on the historical loss experience with particulate matters. Study results show that airline, precision such as electronics and semiconductors, distribution, shipbuilding, car, leisure, glass, dairy farming are vulnerable to volcanic ash, or PM10. The economic losses in both car and shipbuilding industry is estimated to 46.49 billion Korean won due to shutdown for 6 hours in case of a Mt. Baekdu eruption scenario.

• Journal of the Korea Organic Resources Recycling Association
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• v.31 no.1
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• pp.5-14
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• 2023

In this study, LiDAR-reflective black hollow-structured silica/titania(B-HST) materials are successfully synthesized by employing the NaBH₄ reduction and etching method on silica/titania core/shell(STCS) materials, which also effectively enhance near-infrared(NIR) reflectance. Moreover, core-etched supernatant solutions are collected and recycled for the synthesis of extracted silica(e-SiO₂) process, which successfully applies as filler materials for semiconductor epoxy molding compound(EMC). In detail, B-HST materials, fabricated by the sequential experimental steps of sol-gel, reduction, and sonication-mediated etching method, manifest blackness(L^*) of 13.2 similar to black paint and excellent NIR reflectance(31.1%). Consequently, B-HST materials are successfully prepared as LiDAR-reflective black materials. Additionally, core-etched supernatant solution with silanol precursors are employed for synthesis of homogeneous silica filler materials via sol-gel method. As-synthesized silica fillers are incorporated with epoxy resin and carbon black for the preparation of semiconductor EMC. Experimentally synthesized EMC exhibits comparable mechanical-chemical properties to commercial EMC. Conclusively, this study successfully proposes designing procedure and practical experimental method for simultaneously synthesizing the NIR-reflective black materials for self-driving vehicles and EMC materials for semiconductors, which are materials suitable for the industrial 4.0 era, and presented their applicability in future industries.

• Journal of IKEEE
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• v.27 no.1
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• pp.103-108
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• 2023

This research was carried out experiments with changing processes and design parameters to optimally design a SiC-based 1200V power MOSFET, and then, essential electrical characteristics were derived. In order to secure the excellence of the trench gate type SiC power MOSFET device to be designed, electrical characteristics were derived by designing it under conditions such as planner gate SiC power MOSFET, and it was compared with the trench gate type SiC power MOSFET device. As a result of the comparative analysis, the on-resistance while maintaining the yield voltage was 1,840mΩ, for planner gate power MOSFET and to 40mΩ for trench gate power MOSFET, respectively, indicating characteristics more than 40 times better. It was judged that excellent results were derived because the temperature resistance directly affects energy efficiency. It is predicted that the devices optimized through this experiment can sufficiently replace the IGBT devices generally used in 1200V class, and that since the SiC devices are wide band gap devices, they will be widely used to apply semiconductors for vehicles using devices with excellent thermal characteristics.

• KIPS Transactions on Software and Data Engineering
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• v.12 no.3
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• pp.141-148
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• 2023

Accurate overlay metrology is essential to achieve high yields of semiconductor products. Overlay metrology performance is greatly affected by overlay target design and measurement method. Therefore, in order to improve the performance of the overlay target, measurement methods applicable to various targets are required. In this study, we propose a new algorithm that can measure image-based overlay. The proposed measurement algorithm can estimate the sub-pixel position by using a motion vector. The motion vector may estimate the position of the sub-pixel unit by applying a quadratic equation model through polynomial expansion using pixels in the selected region. The measurement method using the motion vector can calculate the stacking error in all directions at once, unlike the existing correlation coefficient-based measurement method that calculates the stacking error on the X-axis and the Y-axis, respectively. Therefore, more accurate overlay measurement is possible by reflecting the relationship between the X-axis and the Y-axis. However, since the amount of computation is increased compared to the existing correlation coefficient-based algorithm, more computation time may be required. The purpose of this study is not to present an algorithm improved over the existing method, but to suggest a direction for a new measurement method. Through the experimental results, it was confirmed that measurement results similar to those of the existing method could be obtained.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.4
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• pp.413-417
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• 2023

Gallium Oxide (Ga₂O₃) is preferred as a material for next generation power semiconductors. The Ga₂O₃ should solve the disadvantages of low thermal resistance characteristics and difficulty in forming an inversion layer through p-type ion implantation. However, Ga₂O₃ is difficult to inject p-type ions, so it is being studied in a heterojunction structure using p-type oxides, such as NiO, SnO, and Cu₂O. Research the lateral-type FET structure of NiO/Ga₂O₃ heterojunction under the Gate contact using the Sentaurus TCAD simulation. At this time, the VG-ID and VD-ID curves were identified by the thickness of the Epi-region (channel) and the doping concentration of NiO of 1×10¹⁷ to 1×10¹⁹ cm-3. The increase in Epi region thickness has a lower threshold voltage from -4.4 V to -9.3 V at I_D = 1×10^-8 mA/mm, as current does not flow only when the depletion of the PN junction extends to the Epi/Sub interface. As an increase of NiO doping concentration, increases the depletion area in Ga₂O₃ region and a high electric field distribution on PN junction, and thus the breakdown voltage increases from 512 V to 636 V at I_D =1×10^-3 A/mm.

• Journal of the Korean Institute of Gas
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• v.27 no.2
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• pp.79-85
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• 2023

Recently, in the semiconductor process, large companies are seeking process changes from memory semiconductors to the foundry due to the increase in demand due to the 4th industry. industry is expanding. The characteristics of special gases and precursors, which are raw materials used to produce these semiconductor chips, are toxic, pyrophoric, inflammable, and corrosive. These semiconductor raw materials are operated in a closed system and do not leak to the outside during normal times, but when leaked, they spread to the inside of the gas box, and when proper ventilation is not provided inside the gas box, they spread to the outside, causing fires, explosions, or toxic substances. It can lead to major accidents such as leakage. Recently, there have been cases of accidents in which hazardous materials leaked from the closed system of the semi conductor process and spread to the inside and outside of the gas box. . In this study, we propose preventive measures based on the case of an accident in which raw material leaked from the VCR fitting, which is the connection part of the semiconductor raw material transfer pipe, and spread to the outside of the gas box.

• The Journal of the Convergence on Culture Technology
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• v.9 no.2
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• pp.553-560
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• 2023

The study is about domestic industries following the migration of hubs (innovation, manufacturing) to other countries and the hub-oriented US industries (batteries, semiconductors, electric vehicles). Additionally, the ongoing trade tensions between the United States and China may have also played a role in companies moving their operations to the United States. The result of such a move could potentially include job creation in the United States, as well as increased investment in the U.S. manufacturing sector. However, it is also possible that there could be negative consequences, such as higher prices for consumers or disruptions to supply chains during the relocation process. However, such IRA, Chips Act scenario would likely also have negative consequences (Inflation in the home country) for the countries whose industries moved to the US, as they would lose jobs, investment, and possibly face economic difficulties as a result. As the result of the empirical analysis of the export scale of Korea and the United States, changes in the movement of global supply hubs are related to factors such as geopolitical price increases and consumption declines. In order to respond to these changes, this paper emphasizes the need to prevent the result of de-advantage by moving the production area of the scale.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.33 no.2
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• pp.45-53
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• 2023

The growth of Si on 4H-SiC substrate has a wide range of applications as a very useful material in power semiconductors, bipolar junction transistors and optoelectronics. However, it is considerably difficult to grow very fine crystalline Si on 4H-SiC owing to the lattice mismatch of approximately 20 % between Si and 4H-SiC. In this paper, we report the growth of a Si epilayer by an Al-related nanostructure cluster grown on a 4H-SiC substrate using a mixed-source hydride vapor phase epitaxy (HVPE) method. In order to grow hexagonal Si on the 4H-SIC substrate, we observed the process in which an Al-related nanostructure cluster was first formed and an epitaxial layer was formed by absorbing Si atoms. From the FE-SEM and Raman spectrum results of the Al-related nanostructure cluster and the hexagonal Si epitaxial layer, it was considered that the hexagonal Si epitaxial layer had different characteristics from the general cubic Si structure.