• Title/Summary/Keyword: semiconductor simulation

Search Result 1,090, Processing Time 0.025 seconds

The PLD Circuit Design of Pattern Generator for the Logical Inspection of Logical Defection (논리결함 검사를 위한 Pattern Generator의 PLD 회로 설계)

  • 김준식;노영동
    • Journal of the Semiconductor & Display Technology
    • /
    • v.2 no.4
    • /
    • pp.1-7
    • /
    • 2003
  • In this paper, we design the pattern generator circuits using PLDs(Programmable Logic Devices). The pattern generator is the circuit which generates the test pattern signal for the inspection of logical defects of semiconductor products. The proposed circuits are designed by the PLD design tool(MAX+ II of ALTERA). Also the designed circuits are simulated for the verification of the designed ones. The simulation results have a good performance.

  • PDF

A Study on Throughput Increase in Semiconductor Package Process of K Manufacturing Company Using a Simulation Model (시뮬레이션 모델을 이용한 K회사 반도체 패키지 공정의 생산량 증가를 위한 연구)

  • Chai, Jong-In;Park, Yang-Byung
    • Journal of the Korea Society for Simulation
    • /
    • v.19 no.1
    • /
    • pp.1-11
    • /
    • 2010
  • K company produces semiconductor package products under the make-to-order policy to supply for domestic and foreign semiconductor manufacturing companies. Its production process is a machine-paced assembly line type, which consists of die sawing, assembly, and test. This paper suggests three plans to increase process throughput based on the process analysis of K company and evaluates them via a simulation model using a real data collected. The three plans are line balancing by adding machines to the bottleneck process, product group scheduling, and reallocation of the operators in non-bottleneck processes. The evaluation result shows the highest daily throughput increase of 17.3% with an effect of 2.8% reduction of due date violation when the three plans are applied together. Payback period for the mixed application of the three plans is obtained as 1.37 years.

Physical-based Dye-sensitized Solar Cell Equivalent Circuit Modeling and Performance Analysis (물리 기반의 염료 감응형 태양전지 등가회로 모델링 및 성능 분석)

  • Wonbok Lee;Junhyeok Song;Hwijun Choi;Bonyong Gu;Jonghwan Lee
    • Journal of the Semiconductor & Display Technology
    • /
    • v.22 no.3
    • /
    • pp.67-72
    • /
    • 2023
  • In this paper, a dye-sensitized solar cell (DSSC), one of the representative third-generation solar cells with eco-friendly materials and processes compared to other solar cells, was modeled using MATLAB/Simulink. The simulation was conducted by designating values of series resistance, parallel resistance, light absorption coefficient, and thin film electrode thickness, which are directly related to the efficiency of dye-sensitized solar cells, as arbitrary experimental values. In order to analyze the performance of dye-sensitized solar cells, the optimal value among each parameter experimental value related to efficiency was found using formulas for fill factor (FF) and conversion efficiency.

  • PDF

Effects of Current Spreading in GaN-based Light-emitting Diodes Using ITO Spreading Pad

  • Kim, Jang Hyun;Kim, Garam;Park, Euyhwan;Kang, Dong Hoon;Park, Byung-Gook
    • JSTS:Journal of Semiconductor Technology and Science
    • /
    • v.15 no.1
    • /
    • pp.114-121
    • /
    • 2015
  • In conventional LEDs, a mesa-structure is usually used and it causes the current to be overcrowded in a specific region. We propose a novel structure of GaN-based LED to overcome this problem. In order to distribute the current in an active region, a spreading pad is inserted at the p-type region in the GaN based LED device. The inserted spreading pad helps the current flow because it is more conductive than the p-type GaN layer. By performing electrical and optical simulations, the effects of the spreading pad insertion are confirmed. The results of electrical simulation show that the current spreads more uniformly and more radiative recombination is produced as well. Moreover, from the optical simulation, it is revealed that the ITO is less absorptive material than p-GaN if the condition of specific wavelength sources is satisfied. Considering all of the results, we can conclude that the luminescent power is enhanced by the spreading pad.

A Daily Production Planning Method for Improving the Production Linearity of Semiconductor Fabs (반도체 Fab의 생산선형성 향상을 위한 일간생산계획 방법론)

  • Jeong, Keun-Chae;Park, Moon-Won
    • Journal of Korean Institute of Industrial Engineers
    • /
    • v.41 no.3
    • /
    • pp.275-286
    • /
    • 2015
  • In this paper, we propose a practical method for setting up a daily production plan which can operate semiconductor fabrication factories more stably and linearly by determining work in process (WIP) targets and movement targets. We first adjust cycle times of the operations to satisfy the monthly production plan. Second, work in process (WIP) targets are determined to control the production progress of operations: earliness and tardiness. Third, movement targets are determined to reduce cumulated differences between WIP targets and actual WIPs. Finally, the determined movement targets are modified through a simulation model which considers capacities of the equipments and allocations of the WIPs in the fab. The proposed daily production planning method can be easily adapted to the memory semiconductor fabs because the method is very simple and has straightforward logics. Although the proposed method is simple and straightforward, the power of the method is very strong. Results from the shop floor in past few periods showed that the proposed methodology gives a good performance with respect to the productivity, workload balance, and machine utilization. We can expect that the proposed daily production planning method will be used as a useful tool for operating semiconductor fabrication factories more efficiently and effectively.

Ni-assisted Fabrication of GaN Based Surface Nano-textured Light Emitting Diodes for Improved Light Output Power

  • Mustary, Mumta Hena;Ryu, Beo Deul;Han, Min;Yang, Jong Han;Lysak, Volodymyr V.;Hong, Chang-Hee
    • JSTS:Journal of Semiconductor Technology and Science
    • /
    • v.15 no.4
    • /
    • pp.454-461
    • /
    • 2015
  • Light enhancement of GaN based light emitting diodes (LEDs) have been investigated by texturing the top p-GaN surface. Nano-textured LEDs have been fabricated using self-assembled Ni nano mask during dry etching process. Experimental results were further compared with simulation data. Three types of LEDs were fabricated: Conventional (planar LED), Surface nano-porous (porous LED) and Surface nano-cluster (cluster LED). Compared to planar LED there were about 100% and 54% enhancement of light output power for porous and cluster LED respectively at an injection current of 20 mA. Moreover, simulation result showed consistency with experimental result. The increased probability of light scattering at the nano-textured GaN-air interface is the major reason for increasing the light extraction efficiency.

A New AMOLED Pixel Circuit Compensating for Threshold Voltage Shift of OTFT (유기 박막 트랜지스터의 문턱전압 변화를 보상하기 위한 새로운 구조의 AMOLED 화소 회로에 관한 연구)

  • Choi, Jong-Chan;Shin, A-Ram;Lee, Jae-In;Yoon, Bong-No;Sung, Man-Young
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2008.06a
    • /
    • pp.95-96
    • /
    • 2008
  • A new voltage-driven pixel circuit using soluble-processed organic thin film transistors (OTFTs) for an active matrix organic light emitting diode (AMOLED) is proposed. The proposed circuit is composed of four switching TFTs, one driving TFT and one storage capacitor. The proposed circuit can compensate for the degradation of OLED current caused by the threshold voltage shift of the OTFT. The simulation results show that the variation of OLED current corresponding to a 3V threshold voltage shift is decreased by 30% compared to the conventional 2TlC structure.

  • PDF

Simulation of Junction Field Effect Transistor using SiGe-Si-SiGe Channel Structure (SiGe-Si-SiGe 채널구조를 이용한 JFET 시뮬레이션)

  • Park, B.G.;Yang, H.Y.;Kim, T.S.;Shim, K.H.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2008.11a
    • /
    • pp.94-94
    • /
    • 2008
  • We have performed simulation for Junction Field Effect Transistor(JFET) using Silvco to improve its electrical properties. The device structure and process conditions of Si-control JFET(Si-JFET) were determined to set its cut off voltage and drain current(at Vg=0V) to -0.5V and $300{\mu}A$, respectively. From electrical property obtained at various implantation energy, dose, and drive-in conditions of p-gate doping, we found that the drive in time of p-type gate was the most determinant factor due to severe diffusion. Therefore we newly designed SiGe-JFET, in which SiGe layer is to epitaxial layers placed above and underneath of the Si-channel. The presence of SiGe layer lessen the p-type dopants (Boron) into the n-type Si channel the phenomenon would be able to enhance the structural consistency of p-n-p junction. The influence of SiGe layer will be discussed in conjunction with boron diffusion and corresponding I-V characteristics in comparison with Si-control JFET.

  • PDF

Bottleneck Detection Framework Using Simulation in a Wafer FAB (시뮬레이션을 이용한 웨이퍼 FAB 공정에서의 병목 공정 탐지 프레임워크)

  • Yang, Karam;Chung, Yongho;Kim, Daewhan;Park, Sang Chul
    • Korean Journal of Computational Design and Engineering
    • /
    • v.19 no.3
    • /
    • pp.214-223
    • /
    • 2014
  • This paper presents a bottleneck detection framework using simulation approach in a wafer FAB (Fabrication). In a semiconductor manufacturing industry, wafer FAB facility contains various equipment and dozens kinds of wafer products. The wafer FAB has many characteristics, such as re-entrant processing flow, batch tools. The performance of a complex manufacturing system (i.e. semiconductor wafer FAB) is mainly decided by a bottleneck. This paper defines the problem of a bottleneck process and propose a simulation based framework for bottleneck detection. The bottleneck is not the viewpoint of a machine, but the viewpoint of a step with the highest WIP in its upstream buffer and severe fluctuation. In this paper, focus on the classification of bottleneck steps and then verify the steps are not in a starvation state in last, regardless of dispatching rules. By the proposed framework of this paper, the performance of a wafer FAB is improved in on-time delivery and the mean of minimum of cycle time.

A Case Study of Comparing the Measuring Methods for Workloads of Resources in a Manufacturing Processes of Semiconductor-Parts (반도체부품 생산공정 자원의 부하 측정방법 비교분석 사례연구)

  • Kim, Dong-Soo;Moon, Dug-Hee
    • Journal of the Korea Society for Simulation
    • /
    • v.20 no.3
    • /
    • pp.49-58
    • /
    • 2011
  • The workloads of facilities and laborers are important for the capacity planning in a factory. They are always referenced whenever a factory develops a new product, increases the production quantity and makes a plan of new investment. There are many measuring methods for estimating the workload effectiveness of facilities and laborers. In this paper, various measuring methods including survey, work sampling, micro-motion study, data gathering from ERP system and simulation, are analyzed for comparing the accuracy of workload. This case study is conducted in a Korean company that produces semiconductor parts like leadframe and packaging substrate.