• 대한기계학회:학술대회논문집
• /
• 대한기계학회 2007년도 춘계학술대회A
• /
• pp.518-520
• /
• 2007

Since all essential property of semiconductor materials are structure-sensitive, the understanding of the deformation mechanism and the deformed structure which can be formed in the nanometer-scale devices is very crucial. To investigate the deformation mechanism and the corresponding structures, nanometer-scale contact loading simulations are carried out using molecular dynamics in silicon and gallium-arsenide.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1993년도 춘계학술대회 논문집
• /
• pp.52-54
• /
• 1993

A new type of semiconductor fuse-link with fuse elements deposited on ceramic substrate introduced. The construction and aging property of this fuse-link, as well as the test circuitry built especially for the development of this fuse-link explained below.

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제3권3호
• /
• pp.107-113
• /
• 2003

Microelectronics device performance and its reliability are directly related to and controlled by its constituent materials and their microstructure. Specific processes used to form and shape the materials microstructure need to be controlled in order to achieve the ultimate device performance. Examples of front-end and back-end ULSI processes, packaging process, and novel optical storage materials are given to illustrate such process-structure-property-reliability relationship. As more novel materials are introduced to meet the new requirements for device shrinkage, such under-standing is indispensable for future generation process development and reliability assessment.

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제14권5호
• /
• pp.572-578
• /
• 2014

In order to overcome small current drivability of a tunneling field-effect transistor (TFET), a TFET using Schottky barrier (SBTFET) is proposed. The proposed device has a metal source region unlike the conventional TFET. In addition, dopant segregation technology between the source and channel region is applied to reduce tunneling resistance. For TFET fabrication, spacer technique is adopted to enable self-aligned process because the SBTFET consists of source and drain with different types. Also the control device which has a doped source region is made to compare the electrical characteristics with those of the SBTFET. From the measured results, the SBTFET shows better on/off switching property than the control device. The observed drive current is larger than those of the previously reported TFET. Also, short-channel effects (SCEs) are investigated through the comparison of electrical characteristics between the long- and short-channel SBTFET.

• 한국전기전자재료학회논문지
• /
• 제17권8호
• /
• pp.893-897
• /
• 2004

In this paper, we studied the mechanical and thermal properties on slice XLPE sheet from 22 kV and 154 kV power cables. Interface structures are XLPE/semiconductor and XLPE/water/semiconductor. We evaluated mechanical property, thermal analysis, moisture analysis. Based on mechanical and thermal properties of the 22 kV XLPE sheet, elongation, mechanical strength, and melting point were evaluated to be 485.48 %, 1.74 kgf/$\textrm{mm}^2$ and $102.48^{\circ}C$, respectively. It was also evaluated from the mechanical and thermal properties of 154 kV XLPE sheet that elongation, mechanical strength, and melting point are 507.81 %, 1.8 kgf/$\textrm{mm}^2$, $106.9^{\circ}C$, respectively. A region shows a rapid increase in tension strength, and B region only shows increase in elongation under 1.0 kgf/$\textrm{mm}^2$, C region shows increase in both elongation and tension strength. Difference of melting point came from the chain of XLPE polymer and the difference of crystallization. Moisture density of semiconductor showed 800 ∼ 1200 ppm before extrude, 14000 ∼24000 ppm after extrude. These values were higher than the moisture density of XLPE (300∼560) ppm.

• 한국정보처리학회:학술대회논문집
• /
• 한국정보처리학회 2021년도 추계학술발표대회
• /
• pp.61-63
• /
• 2021

Machine learning model gained the popularity in recent years as multi-national companies have incorporated machine learning in their services. Such service is called machine learning as a service (MLaSS). Such services are provided to users based on charge-per-query which triggers the motivations for adversaries to steal the trained victim model to reduce the cost of using the service. Therefore, it is important for companies that provide MLaSS to protect their intellectual property (IP) against adversaries. It has been arms race between the attack and defence in a context of the privacy of machine learning models. In this paper, we provide a comprehensive study of recent development in protecting privacy of machine learning models.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1997년도 춘계학술대회 논문집
• /
• pp.338-341
• /
• 1997

According to reports, it is impossible to make Ohmic Contact with high resistivity p type CdTe or CdZnTe semiconductor theoretically. But it is in need of making Ohmic Contact to fabricate semiconductor radiation detector By electroless deposition method using gold chloride solution, we made Ohmic Contact of Au and p-Cd$_{80}$Zn$_{20}$Te which grown by High Presure Bridgman Method in Aurora Technologies Corporation. We investigated the interface with Rutherford Backscattering Spectrometry and Auger electron spectroscopy. And we evaluated the degree of Ohmic Contact for the Au/CdZnTe interface by the I/V characteristic curve. As a result, we concluded that it showed excellent Ohmic Contact property by tunneling mechanism through the interface.e.

• 반도체디스플레이기술학회지
• /
• 제12권1호
• /
• pp.61-65
• /
• 2013

We investigated the wearable dynamics of diamond spherical abrasive during the substrate surface polishing under the pad compression via classical molecular dynamics modeling. We performed three-dimensional molecular dynamics simulations using the Morse potential functions for the copper substrate and the Tersoff potential function for the diamond abrasive. The pad hardness had a big impact on the wearable dynamics of the abrasive. The moving speed of the abrasive decreased with increasing hardness of the pad. As the hardness decreased, the abrasive was indented into the pad and then the sliding motion of the abrasive was increased. So the pad hardness was greatly influenced on the slide-to-roll ratio as well as the wearable rate.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
• /
• pp.486-488
• /
• 2003

Some important properties of the liquid crystal molecules containing fluoro-isothiocyanated molecules have been studied using quantum chemical calculations and the results were correlated with respect to the structure of the molecules. Dielectric anisotropy, birefringence have been predicted for several unknown structures. The Maier-Meier, Vuks equation were used for the dielectric anisotropy and birefringence calculation. The results obtained by empirical approximation showed a good agreement with experiment ones.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1993년도 정기총회 및 추계학술대회 논문집 학회본부
• /
• pp.188-191
• /
• 1993

Silicon flow sensor which can detect the magnitude and direction of two dimensional air flow was designed and fabricated by CMOS process and bulk micromachining technique. The flow sensor consists of three-layered dielectric diaphragm a heater at the center of the diaphragm and four thermopiles surrounding the heater at each side of diaphragm as sensing elements. This diaphragm structure contributes to improve the sensitivity due to excellent thermal isolation property of dielectric materials and its tiny thickness. The flow sensor has good axial symmetry to sense 2-D air flow with the optimized sensing position in the given structure. Measured sensitivity of our sensor is $18.7mV/(m/s)^{1/2}$.