Browse > Article

Process-Structure-Property Relationship and its Impact on Microelectronics Device Reliability and Failure Mechanism  

Tung, Chih-Hang (Institute of Microelectronics)
Publication Information
JSTS:Journal of Semiconductor Technology and Science / v.3, no.3, 2003 , pp. 107-113 More about this Journal
Abstract
Microelectronics device performance and its reliability are directly related to and controlled by its constituent materials and their microstructure. Specific processes used to form and shape the materials microstructure need to be controlled in order to achieve the ultimate device performance. Examples of front-end and back-end ULSI processes, packaging process, and novel optical storage materials are given to illustrate such process-structure-property-reliability relationship. As more novel materials are introduced to meet the new requirements for device shrinkage, such under-standing is indispensable for future generation process development and reliability assessment.
Keywords
Reliability; ESD Electronigration Leadframe; CD-RW;
Citations & Related Records
연도 인용수 순위
  • Reference
1 T. Kouzaki, Japanese Journal of Electron Microscopy, 49(1), 85-88, 2000   DOI
2 T. Kouzaki, K. Yoshioka, E. Ohno, Materials Research Society Symposium Proceedings, Vol. 480, 251-256, 1997
3 N. Yamada, E. Ohno, K. Nishiuchi, N. Akahira, Journal of Applied Physics, 69, 2849-2856, 1991   DOI
4 George T.T. Sheng, C.F. Hu, W.J. Choi, K.N. Tu, Y.Y. Bong, L. Nguyen, Journal of Applied Physics, 92(1), 64-69, 2002   DOI   ScienceOn
5 K.N. Tu, Physical Review B, 49, 2030-, 1994   DOI   ScienceOn
6 W. Mayer, M. Poate, K.N. Tu, Science, 190, 228-, 1975   DOI
7 B.Z. Lee, D.N. Lee, Acta Materialia, 46, 3701-, 1998   DOI   ScienceOn
8 L.J. Tang, K.L. Pey, C.H. Tung, M.K. Radhakrishnan, W.H. Lin, 10th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), 134-140, 2003
9 K.N. Tu, Acta Metallurgica, 21, 347-, 1973   DOI   ScienceOn
10 J.M.E. Harper, C. Cabral Jr., P.C. Andricacos, L. Gignac, I.C. Noyan, K.P. Rodbell, and K.C. Hu, Materials Research Society Symposium Proceedings, Vol. 564, 387-, 1999
11 A.V. Glasow, A.H. Fisher, D. Bunel, G. Friese, A. Hausmann, O. Heitzch, M. Hommel, J. Kriz, S. Penka, P. Raffin, C. Robin, H.-P. Sperlich, F. Ungar, A.E. Zitzelsberger, Proc. International Reliability Physics Symp. (IRPS), 146-150, 2003
12 L.M. Gignac, K.P. Rodbell, C. Cabral, Jr., P.C. Andricacos, P.M. Rice, R.B. Beyers, P.S. Locke, and S.J. Klepeis, Materials Research Society Symposium Proceedings, Vol. 564, 373-, 1999
13 S.W. Russel et al., Advanced Metallization and Interconnect systems for ULSI Applications in 1997, 289-, 1998
14 B.Z. Li, T.D. Sullivan, T.C. Lee, Proc. International Reliability Physics Symp. (IRPS), 140-145, 2003
15 C.H. Tung, C.K. Cheng, M.K. Radhakrishnan, and N.M. Iyer, Proceeding of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), 65-69, 2002   DOI
16 K.L. Pey, C.H.Tung, M.K. Radhakrishnan, L.J. Tang, and W.H. Lin, 2003 IEEE International Reliability Physics Symposium (IRPS), March 30-April 3, Dallas Texas, USA, pp 584-585, 2003   DOI
17 S.S. Wong, C. Ryu, H. Lee, Proc. of the IEEE 1998 IITC, 107-, 1998